Pb Free Product
http://www.ncepower.com
NCE75H26T
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE75H26T uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It can
be used
in automotive applications and a wide variety of other
applications.
General Features
●
V
DSS
=75V,I
D
=260A
R
DS(ON)
< 3mΩ @ V
GS
=10V
（Typ：2.1
mΩ）
●
Good stability and uniformity with high E
AS
●
Special process technology for high ESD capability
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
●
●
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-247
top view
Package Marking and Ordering Information
Device Marking
NCE75H26T
Device
NCE75H26T
Device Package
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 3)
Peak Diode Recovery dv/dt
(Note 4)
E
AS
dv/dt
Symbol
V
DSS
V
GS
I
D
I
D
(100℃)
Limit
75
±20
260
200
1060
385
2.57
2200
13
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
I
DM
P
D
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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Pb Free Product
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Operating Junction and Storage Temperature Range
NCE75H26T
T
J
,T
STG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 1)
R
θJC
0.39
℃
/W
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
Qrr
t
on
Condition
V
GS
=0V I
D
=250μA
V
DS
=75V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
V
DS
=25V,I
D
=40A
Min
75
-
-
2
-
260
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
86
-
-
3
2.1
-
15700
2410
1240
17
80
100
62
160
35
55
-
52
110
Max
-
1
±200
4
3
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
nS
nC
V
DS
=30V,V
GS
=0V,
F=1.0MHz
V
DD
=38V,I
D
=40A
V
GS
=10V,R
GEN
=1.2Ω
(Note2)
V
DS
=38V,I
D
=160A,
V
GS
=10V(Note2)
V
GS
=0V,I
S
=40A
TJ = 25°C, IF = 40A
di/dt = 100A/μs
(Note2)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t
≤
10 sec.
2. Pulse Test: Pulse Width
≤
400μs, Duty Cycle
≤
2%.
3. EAS condition：Tj=25℃,V
DD
=37.5V,V
G
=10V,L=2mH,Rg=25Ω,I
AS
=37A
4.
I
SD≤
125A, di/dt
≤
260A/μs, V
DD≤
V
(BR)DSS
，T
J
≤
175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
Pb Free Product
http://www.ncepower.com
NCE75H26T
Test circuit
1）E
AS
test Circuit
2）Gate charge test Circuit
3）Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
Pb Free Product
http://www.ncepower.com
Typical Electrical and Thermal Characteristics
NCE75H26T
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
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Pb Free Product
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NCE75H26T
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
Vth , ( V )
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 10 V
GS(th)
vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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