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BD4222MUV-E2

产品描述Analog Circuit, 1 Func, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, VQFN-16
产品类别模拟混合信号IC    信号电路   
文件大小874KB,共22页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
下载文档 详细参数 全文预览

BD4222MUV-E2概述

Analog Circuit, 1 Func, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, VQFN-16

BD4222MUV-E2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
包装说明HVQCCN, LCC16,.12SQ,20
Reach Compliance Codecompliant
模拟集成电路 - 其他类型ANALOG CIRCUIT
JESD-30 代码S-XQCC-N16
长度3 mm
功能数量1
端子数量16
最高工作温度85 °C
最低工作温度-35 °C
封装主体材料UNSPECIFIED
封装代码HVQCCN
封装等效代码LCC16,.12SQ,20
封装形状SQUARE
封装形式CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
电源3.3 V
认证状态Not Qualified
座面最大高度1 mm
最大供电电流 (Isup)2.5 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
温度等级OTHER
端子形式NO LEAD
端子节距0.5 mm
端子位置QUAD
宽度3 mm

BD4222MUV-E2文档预览

Regulators ICs for Digital Cameras and Camcorders
Strobe Charge Control IC
BD4222MUV
No.12036EAT05
●Description
The strobe charge IC is a self-oscillating switching regulator that uses a transformer. It provides highly efficient applications
for charging capacitors in sets with various strobes.
●Features
1) Built-in power transistor
2) Adjustable transformer primary-side peak current to linear current with the ADJ pin
3) Charging control switching with the START pin
4) Includes high precision full charge voltage detection circuit and output pin
5) Various built-in protective circuits (TSD, UVLO, SDP)
6) Built-in IGBT driver
7) Employs small package: VQFN016V3030 (3.0 mm×3.0 mm×1.0 mm)
●Applications
Digital still cameras, single-lens reflex cameras, digital video cameras
●Absolute
Maximum Ratings
Parameter
VCC supply voltage
VDD supply voltage
SW pin Voltage
VC pin voltage
Input pin voltage (START, ADJ)
Input pin voltage (IGBT_IN, IGBT_EN)
Operating temperature range
Storage temperature range
Junction temperature
Power dissipation
Symbol
VCC
VDD
VSW
VCDC
VI1
VI2
Topr
Tstg
Tjmax
Pd
Rating
-0.3 to 7
-0.3 to 7
50
-15 to 50
-0.3 to 7
-0.3 to 7
-35 to +85
-55 to +150
150
1770
*
Unit
V
V
V
V
V
V
°C
°C
°C
mW
* Reduced by 14.16 mW/°C at over Ta=25°C
(When mounted on a 74.2 mm×74.2 mm×1.6 mm glass epoxy board: Surface radiating copper foil of 6.28mm
2
, copper foil laminated in each layer)
Table 1 Absolute Maximum Ratings
●Operating
Conditions
Parameter
Symbol
VCC
VDD
Rating
2.5 to 5.5
2.5 to 5.5
45
4.5
0 to VCC
0 to VDD
Unit
V
V
V
A
V
V
VCC supply voltage range
VDD supply voltage range
SW pin
Voltage
Current *3
VSW
ISW
VI1
VI2
Input pin voltage (START, ADJ)
Input pin voltage (IGBT_IN, IGBT_EN)
*3 Pulse width: 100μs
Table 2 Operating Conditions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/21
2012.04 - Rev.A
BD4222MUV
Technical Note
●Electrical
characteristics
(Ta=25°C, VCC=V(START)=3.3V, V(ADJ)=1.0V,V(IGBT_IN)=0V, V(IGBT_EN)=0V, unless otherwise specified.)
Target value
Parameter
【Overall
device】
VCC current consumption
VCC Circuit current standby operation
VDD current consumption
VDD Circuit current standby operation
【Standby
control START pin】
START pin high voltage
START pin low voltage
START pin sink current
Unresponsive time when START shorted
【Transformer
primary-side driver block】
SW pin leak current
SW pin peak current 1
SW pin peak current 2
SW pin peak current 3
SW saturation voltage
【Charging
characteristics adjustment block】
ADJ sink current
Maximum ON time
Maximum OFF time
IADJ
TONMAX
TOFFMAX
25
12
5
50
25
10
100
50
μA
μs
μs
ISWL
IPEAK1
IPEAK2
IPEAK3
VSAT
0.9
1.5
3.05
1.0
1.6
3.20
0.10
1
1.1
1.7
3.35
0.20
μA
A
A
A
V
SW=45V
ADJ=0V
ADJ=1V
ADJ=3V
ISW=0.5A
VSTH
VSTL
ISTART
TSTART
2.0
12
6
24
12.5
0.6
36
25
V
V
μA
μs
START=3.3V
IVCC
ISTB
IVDD
IVDDSTB
20
1
40
2.5
1
80
1
mA
μA
μA
μA
At Output OFF
START=0V
IGBT_EN=3.3V,IGBT_IN=0V
IGBT_EN=0.0V,IGBT_IN=0V
Symbol
Min.
Standa
rd
Max.
Unit
Condition
【Transformer
secondary-side detection block】
VC pin sink current
Full charge detection voltage
OFF detection voltage
FULL pin ON resistance
FULL pin leak current
Anti-Ringing Filter time
【Protective
circuit block】
UVLO detection voltage
UVLO hysteresis width
UVLO VDD detection voltage
UVLO VDD hysteresis width
【IGBT
driver block】
High-level output short circuit current
Low-level output short circuit current
IGBT_IN high-level input voltage range1
IGBT_IN high-level input voltage range2
IGBT_IN low-level input voltage range
IGBT_IN sink current
IGBT_EN high-level input voltage range
IGBT_EN low-level input voltage range
IGBT_EN sink current
Ioso
Iosi
VIGBTH1
VIGBTH2
VIGBTL
IIGBT_IN
VIGBTENH
VIGBTENL
IIGBT_EN
90
30
2.0
1.4
12
2.0
4.5
140
60
24
6.5
200
90
0.6
36
0.6
10
mA
mA
V
V
V
μA
V
V
μA
IGBT_EN=3.3V, IGBT_IN=3.3V
IGBT_IN=3.3V, IGBT_EN=3.3V
START=0V,IGBT_OUT_P=0V
IGBT_IN=0V, IGBT_EN=3.3V
START=0V,IGBT_OUT_N=3.3V
IGBT_EN=3.3V, START=0V
VDD=3.0½3.6V,
Ta=-25½85 , IGBT_EN=3.3V
IGBT_EN=3.3V, START=0V
IGBT_IN=3.3V, START=0V
IGBT_IN=3.3V, START=0V
VUVLOTH
VUVLOHYS
VUVLODTH
VUVLODHYS
1.9
180
1.9
180
2.05
230
2.05
230
2.2
280
2.2
280
V
mV
V
mV
VDD detection IGBT_IN=3.3V,
IGBT_EN=3.3V
IGBT_IN=3.3V, IGBT_EN=3.3V
VCC detection
IVC
VFULLTH
VOFFL
RFULLL
IFULLH
TVCF
1
29.7
-1.3
50
100
2
30
-0.5
110
200
4
30.3
-0.2
300
1
320
mA
V
V
μA
nS
FULL=0.5V
FULL=3.3V
VC=30V
Table 3 Electrical Characteristics
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/21
2012.04 - Rev.A
BD4222MUV
●Reference
data (VCC=3.3V, all the temperatures indicated in the graphs are the ambient temperature.)
1.0
1.0
0.8
0.8
3.0
2.5
2.0
Technical Note
1.6
1.4
1.2
85
85
25
1.0
ICC [uA] [uA]
ICC
0.6
ICC [uA]
0.4
0.4
0.2
0.2
0.0
0.0
0
0
2
2
1.0
0.5
-35
85
4
25
-35
6
6
8
8
0.0
0
1
2
3
4
ICC [mA]
0.6
1.5
25
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
-35
VCC [V]
4
V(IPEAK)
V
½
[V]
V
ADJ
6
7
Fig1 Circuit current
VCC [V]
VCC during standby
operation
Fig.2 Circuit current VCC during Pow_MOS_ON
Fig.3 Circuit current VCC during Pow_MOS_OFF
VCC [V]
32
28
24
20
700
600
500
4.00
ADJ=3.0V
3.00
ADJ=1.6V
25
85
-35
1.00
V(SW) [mV]
I(SW) [A]
400
300
200
100
0
ICC [uA]
16
12
8
4
0
-100
2.00
ADJ=0V
-50
0
50
100
150
200
0
0.2
0.4
0.6
0.8
1
0.00
-35
-15
5
25
45
65
85
V(IPEAK)
V
½
[V]
V
ADJ
I(SW) [A]
Ta [℃]
Fig.4 Temperature characteristics of full
charge voltage
Fig.5 SW pin saturation voltage
Fig.6. Temperature characteristics of
primary-side peak current
4.0
3.5
3.0
32
2.0
25
-35
85
28
24
20
1.6
2.5
ISTART (uA)
I(SW) [A]
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
16
12
8
4
0
0
0.5
1
1.5
85
-35
ICC( mA)
25
1.2
25
0.8
85
-35
0.4
2
2.5
3
3.5
0.0
0
0.5
1
1.5
2
2.5
3
3.5
V(ADJ) [V]
VSTART (V)
V(START) [V]
Fig.7 Primary-side peak current
characteristics
12
Fig.8 START pin sink current
Fig.9 START pin Vth voltage
32
28
24
20
30
25
-35
25
10
85
25
-35
85
85
IADJ (uA)
8
25
-35
20
IIGBT_IN (uA)
I[FULL] (mA)
16
12
8
4
0
0
1
2
3
4
6
4
2
0
0
1
2
3
4
15
10
5
0
0
1
2
3
4
V[FULL] (V)
VADJ (V)
VIGBT_IN (V)
Fig.10 ADJ pin sink current
Fig.11 ADJ pin source current
Fig.12 ADJ pin sink current
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/21
2012.04 - Rev.A
BD4222MUV
●Reference
data (VCC=3.3V, all the temperatures indicated in the graphs are the ambient temperature.)
4.0
7
4.0
3.5
Technical Note
85
V[IGBT_OUT] (V)
3.0
6
5
85
25
V[IGBT_OUT] (V)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
85
I[IGBT_EN] (uA)
4
2.0
-35
3
2
1
0
-35
25
25
1.0
-35
0.0
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
V[IGBT_IN] (V)
V[IGBT_EN ] (V)
V[IGBT_EN] (V)
Fig.13 IGBT_IN pin sink current
Fig.14 IGBT_IN pin Vth voltage
Fig.15 IGBT_EN pin sink current
70
60
50
0
3.2
2.8
2.4
2.0
-35
25
I[IGBT_OUTP] (mA)
-20
-40
-60
25
85
-35
I[IGBT_OUTN] (mA)
40
30
20
10
0
0
1
2
3
85
85
-100
-120
-140
-160
SW (V)
-80
1.6
1.2
0.8
0.4
0.0
25
-35
4
V[IGBT_OUTN] (V)
0
1
2
3
4
0
1
2
3
4
V[IGBT_OUTP] (V)
VCC (V)
Fig.16 IGBT_EN pin Vth voltage
Fig.17 IGBT_OUT pin sink current
Fig.18 VCC UVLO Detect Voltage
3.2
2.8
2.4
2.0
3.2
3.2
2.8
2.4
85
25
-35
IGBT_OUT (V)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
SW (V)
1.6
1.2
0.8
0.4
0.0
0
1
2
3
4
85
IGBT_OUT (V)
25
-35
2.0
1.6
1.2
0.8
0.4
0.0
25
85
-35
0
1
2
3
4
0
1
2
3
4
VCC (V)
VDD (V)
VDD (V)
Fig.19 VCC UVLO release voltage
1.0
Fig.20 VDD UVLO Detect Voltage
160
140
Fig.21 VDD UVLO release voltage
1.6
1.4
1.2
0.8
120
0.6
100
85
IVDD (mA)
1.0
0.8
85
25
IVDD (uA)
IDD [uA]
80
60
40
0.4
25
-35
0.6
0.4
0.2
0.0
-35
0.2
-35
25
85
20
0
0.0
0
2
4
6
8
0
2
4
6
8
0
2
4
6
8
VDD [V]
VDD (V)
VDD (V)
Fig.22 Circuit current VDD during standby
operation
Fig.23 Circuit current VDD during IGBT
driver off
Fig.24 Circuit current VDD during IGBT
driver on
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
4/21
2012.04 - Rev.A
BD4222MUV
●Block
diagram
Technical Note
OFF time detection
*STB : Standby signal
*OS : One Shot palse
Fig.25 Block Diagram
●Pin
No.
Pin No.
1
2
3
4
5
6
7
8½10
11,12
13
14
15
16
Pin Name
VDD
VCC
GND
ADJ
FULL
START
VC
SW
PGND
IGBT_IN
IGBT_EN
IGBT_OUT_N
IGBT_OUT_P
Function
VDD supply pin
VCC supply pin
Ground pin
Ipeak current control signal input pin
Full charge detection signal output pin
Charge start signal input pin
Full charge detection pin
Switching pin
Power Ground
IGBT Driver output start signal input pin
IGBT Driver operation restriction input pin
IGBT Driver Nside output pin
IGBT Driver Pside output pin
Table 4 Pin No.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/21
2012.04 - Rev.A
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