UML12N
Transistors
General purpose transistor
(isolated transistor and diode)
UML12N
2SC4617and RB521S-30 are housed independently in a UMT5 package.
(4)
(3)
Applications
DC / DC converter
Motor driver
External dimensions
(Units : mm)
0.65 0.65
1.3
0.9
0.2
0.15
Features
1) Tr : Low V
CE(sat)
Di : Low V
F
2) Small package
(5)
1.25
2.1
0.7
0.1Min.
0~0.1
Structure
Silicon epitaxial planar transistor
Schottky barrier diode
Each lead has same dimensions
Abbreviated symbol : L12
ROHM : UMT5
EIAJ : SC-88A
Equivalent circuit
(3)
(2)
(1)
Tr2
Di1
(4)
(5)
Packaging specifications
Type
UML12N
Package
UMT5
Marking
L12
Code
TR
Basic ordering unit (pieces)
3000
(1)
2.0
(2)
1/4
UML12N
Transistors
Absolute maximum ratings
(Ta=25°C)
Di1
Parameter
Symbol
I
O
Average revtified forward current
Forward current surge peak (60Hz, 1∞) I
FSM
V
R
Reverse voltage (DC)
Tj
Junction temperature
Tstg
Range of storage temperature
Limits
200
1
30
125
−55~+125
Unit
mA
A
V
°C
°C
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Tstg
Limits
60
50
7
150
120
150
−55∼+125
Unit
V
V
V
mA
mW
˚C
˚C
∗
∗
Each terminal mount on a recommended.
Electrical characteristics
(Ta=25°C)
Di1
Parameter
Forward voltage
Reverse current
Symbol
V
R
I
R
Min.
−
−
Typ.
0.40
4.0
Max.
0.50
30
Unit
V
µA
Conditions
I
F
=200mA
V
R
=10V
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
Cob
60
50
7
−
−
−
180
−
−
−
−
−
−
−
−
−
180
2
−
−
−
0.1
0.1
0.4
390
−
3.5
V
V
V
µA
µA
V
−
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
I
C
/I
B
=50mA/5mA
V
CE
=6V,
I
C
=1mA
Conditions
MHz V
CE
=12V,
I
E
=−2mA,
f=100MHz
PF
V
CB
=12V,
I
E
=0A,
f=1MHz
2/4
UML12N
Transistors
Electrical characteristic curves
Di1
1
100m
10m
10m
Ta=125°C
1m
75°C
100µ
10µ
1µ
100n
10n
0
10
20
30
REVERSE VOLTAGE : V
R
(V)
−25°C
25°C
FORWARD CURRENT : I
F
(A)
1m
100µ
10µ
1µ
0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
REVERSE CURRENT : I
R
(A)
5
°
C
1
2
°
C
T
a
=
7
5
2
5
−
2
5
°
C
°
C
Fig.2 Reverse characteristics
Tr2
50
COLLECTOR CURRENT : I
C
(mA)
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
100
Ta=25˚C
COLLECTOR CURRENT : I
C
(mA)
20
10
5
80
0.50mA
mA
0.45
A
m
0.40
0.35mA
0.30mA
10
Ta=25˚C
30µA
27µA
8
24µA
21µA
Ta=100˚C
25˚C
−5
5˚C
60
0.25mA
0.20mA
6
18µA
15µA
2
1
0.5
0.2
0.1
0
0.2
40
0.15mA
0.10mA
4
12µA
9µA
20
2
6µA
3µA
0.05mA
I
B
=0A
0
0.4
0.8
1.2
1.6
2.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
0
I
B
=0A
4
8
12
16
20
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics ( I )
Fig.3 Grounded emitter output
characteristics ( II )
500
500
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
Ta=25˚C
Ta=100˚C
V
CE
=5V
3V
1V
V
CE
=5V
0.5
Ta=25˚C
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
200
200
25˚C
−55˚C
0.2
100
100
0.1
I
C
/I
B
=50
0.05
50
50
20
10
20
20
0.02
0.01
0.2
10
0.2
0.5
1
2
5
10 20
50 100 200
10
0.2
0.5
1
2
5
10 20
50 100 200
0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
Fig.5 DC current gain vs. collector
current ( II )
Fig.6 Collector-emitter saturation
voltage vs. collector current
3/4
UML12N
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.5
0.5
Ta=25˚C
I
C
/I
B
=10
0.5
I
C
/I
B
=50
0.2
0.2
0.2
0.1
0.05
0.1
0.05
I
C
/I
B
=50
20
10
0.1
0.05
Ta=100˚C
25˚C
−55˚C
Ta=100˚C
25˚C
−55˚C
0.02
0.02
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100
0.01
0.2
0.5
1
2
5
10
20
50 100 200
0.01
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
TRANSITION FREQUENCY : f
T
(MHz)
500
Ta=25˚C
V
CE
=6V
20
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
10
Cib
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25˚C
f=32MH
Z
V
CB
=6V
100
200
5
50
100
2
Co
b
20
50
−0.5
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : I
E
(mA)
Fig.10 Gain bandwidth product vs.
emitter current
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.12 Base-collector time constant vs.
emitter current
4/4
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