Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER SOP-8
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | NEC(日电) |
| 包装说明 | POWER SOP-8 |
| Reach Compliance Code | compliant |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 5 A |
| 最大漏源导通电阻 | 0.053 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 8 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 20 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| UPA2733GR-E2 | UPA2733GR-E2-A | UPA2733GR-E1-A | UPA2733GR-E1 | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER SOP-8 | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER SOP-8 | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, POWER SOP-8 | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER SOP-8 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 不符合 |
| 厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) |
| 包装说明 | POWER SOP-8 | SMALL OUTLINE, R-PDSO-G8 | LEAD FREE, POWER SOP-8 | POWER SOP-8 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 5 A | 5 A | 5 A | 5 A |
| 最大漏源导通电阻 | 0.053 Ω | 0.053 Ω | 0.053 Ω | 0.053 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609代码 | e0 | e6 | e3/e6 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 20 A | 20 A | 20 A | 20 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | TIN BISMUTH | MATTE TIN/TIN BISMUTH | TIN LEAD |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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