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SN74LVC2G126
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
www.ti.com
SCES205I – APRIL 1999 – REVISED JUNE 2006
FEATURES
•
•
•
•
•
•
•
•
Available in the Texas Instruments
NanoStar™ and NanoFree™ Packages
Supports 5-V V
CC
Operation
Inputs Accept Voltages to 5.5 V
Max t
pd
of 4 ns at 3.3 V
Low Power Consumption, 10-µA Max I
CC
±24-mA
Output Drive at 3.3 V
Typical V
OLP
(Output Ground Bounce)
<0.8 V at V
CC
= 3.3 V, T
A
= 25°C
Typical V
OHV
(Output V
OH
Undershoot)
>2 V at V
CC
= 3.3 V, T
A
= 25°C
DCT PACKAGE
(TOP VIEW)
•
•
•
I
off
Supports Partial-Power-Down Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
DCU PACKAGE
(TOP VIEW)
YEA, YEP, YZA,
OR YZP PACKAGE
(BOTTOM VIEW)
1OE
1A
2Y
GND
1
2
3
4
8
7
6
5
V
CC
2OE
1Y
2A
1OE
1A
2Y
GND
1
2
3
4
8
7
6
5
V
CC
2OE
1Y
2A
GND
2Y
1A
1OE
4 5
3 6
2 7
1 8
2A
1Y
2OE
V
CC
See mechanical drawings for dimensions.
DESCRIPTION/ORDERING INFORMATION
This dual bus buffer gate is designed for 1.65-V to 5.5-V V
CC
operation.
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the
die as the package.
ORDERING INFORMATION
T
A
PACKAGE
(1)
NanoStar™ – WCSP (DSBGA)
0.17-mm Small Bump – YEA
NanoFree™ – WCSP (DSBGA)
0.17-mm Small Bump – YZA (Pb-free)
–40°C to 85°C
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YEP
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pb-free)
SSOP – DCT
VSSOP – DCU
(1)
(2)
Reel of 3000
Reel of 3000
Reel of 250
ORDERABLE PART NUMBER
SN74LVC2G126YEAR
SN74LVC2G126YZAR
Reel of 3000
SN74LVC2G126YEPR
SN74LVC2G126YZPR
SN74LVC2G126DCTR
SN74LVC2G126DCUR
SN74LVC2G126DCUT
C26_ _ _
C26_
_ _ _CN_
TOP-SIDE MARKING
(2)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YEA/YZA,YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one
following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb,
•
= Pb-free).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2006, Texas Instruments Incorporated
SN74LVC2G126
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
SCES205I – APRIL 1999 – REVISED JUNE 2006
www.ti.com
DESCRIPTION/ORDERING INFORMATION (CONTINUED)
The SN74LVC2G126 is a dual bus driver/line driver with 3-state outputs. The outputs are disabled when the
associated output-enable (OE) input is low.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the
driver.
This device is fully specified for partial-power-down applications using I
off
. The I
off
circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
FUNCTION TABLE
(EACH BUFFER)
INPUTS
OE
H
H
L
A
H
L
X
OUTPUT
Y
H
L
Z
LOGIC DIAGRAM (POSITIVE LOGIC)
1
1OE
1A
2
6
1Y
7
2OE
2A
5
3
2Y
2
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www.ti.com
SN74LVC2G126
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
SCES205I – APRIL 1999 – REVISED JUNE 2006
Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
Supply voltage range
Input voltage range
(2)
Voltage range applied to any output in the high-impedance or power-off state
(2)
Voltage range applied to any output in the high or low
Input clamp current
Output clamp current
Continuous output current
Continuous current through V
CC
or GND
DCT package
θ
JA
Package thermal impedance
(4)
DCU package
YEA/YZA package
YEP/YZP package
T
stg
(1)
(2)
(3)
(4)
Storage temperature range
–65
V
I
< 0
V
O
< 0
state
(2) (3)
–0.5
–0.5
–0.5
–0.5
MAX
6.5
6.5
6.5
V
CC
+ 0.5
–50
–50
±50
±100
220
227
140
102
150
°C
°C/W
UNIT
V
V
V
V
mA
mA
mA
mA
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
The value of V
CC
is provided in the recommended operating conditions table.
The package thermal impedance is calculated in accordance with JESD 51-7.
Submit Documentation Feedback
3
SN74LVC2G126
DUAL BUS BUFFER GATE
WITH 3-STATE OUTPUTS
SCES205I – APRIL 1999 – REVISED JUNE 2006
www.ti.com
Recommended Operating Conditions
(1)
MIN
V
CC
Supply voltage
Operating
Data retention only
V
CC
= 1.65 V to 1.95 V
V
IH
High-level input voltage
V
CC
= 2.3 V to 2.7 V
V
CC
= 3 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
CC
= 1.65 V to 1.95 V
V
IL
Low-level input voltage
V
CC
= 2.3 V to 2.7 V
V
CC
= 3 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
I
V
O
Input voltage
Output voltage
High or low state
3-state
V
CC
= 1.65 V
V
CC
= 2.3 V
I
OH
High-level output current
V
CC
= 3 V
V
CC
= 4.5 V
V
CC
= 1.65 V
V
CC
= 2.3 V
I
OL
Low-level output current
V
CC
= 3 V
V
CC
= 4.5 V
V
CC
= 1.8 V
±
0.15 V, 2.5 V
±
0.2 V
∆t/∆v
T
A
(1)
Input transition rise or fall rate
Operating free-air temperature
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5 V
±
0.5 V
–40
0
0
0
1.65
1.5
0.65
×
V
CC
1.7
2
0.7
×
V
CC
0.35
×
V
CC
0.7
0.8
0.3
×
V
CC
5.5
V
CC
5.5
–4
–8
–16
–24
–32
4
8
16
24
32
20
10
5
85
°C
ns/V
mA
mA
V
V
V
V
MAX
5.5
UNIT
V
All unused inputs of the device must be held at V
CC
or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs,
literature number SCBA004.
4
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