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Datasheet> 器件分类 > 存储> 存储> IDT71T65612S166BG

IDT71T65612S166BG: 产品描述ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119; 产品类别存储存储; 文件大小539KB，共26页; 制造商IDT (Integrated Device Technology)

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IDT71T65612S166BG概述

ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119

IDT71T65612S166BG规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	BGA,
针数	119
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	3.5 ns
JESD-30 代码	R-PBGA-B119
JESD-609代码	e0
长度	22 mm
内存密度	9437184 bit
内存集成电路类型	ZBT SRAM
内存宽度	36
湿度敏感等级	3
功能数量	1
端子数量	119
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX36
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
认证状态	Not Qualified
座面最大高度	2.36 mm
最大供电电压 (Vsup)	2.625 V
最小供电电压 (Vsup)	2.375 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	1.27 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	14 mm

IDT71T65612S166BG相似产品对比

	IDT71T65612S166BG	IDT71T65612S200BQ	IDT71T65612S200BG	IDT71T65812S166BG	IDT71T65812S166BQ	IDT71T65612S166BQ	IDT71T65812S200BQ	IDT71T65612S200PF	IDT71T65612S166PF	IDT71T65812S200BG
描述	ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 256KX36, 3.2ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 256KX36, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119	ZBT SRAM, 512KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 256KX36, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA165, 13 X 15 MM, FINE PITCH, BGA-165	ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	ZBT SRAM, 512KX18, 3.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	QFP	QFP	BGA
包装说明	BGA,	TBGA,	BGA,	BGA,	TBGA,	TBGA,	TBGA,	LQFP,	LQFP,	BGA,
针数	119	165	119	119	165	165	165	100	100	119
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.5 ns	3.2 ns	3.2 ns	3.5 ns	3.5 ns	3.5 ns	3.2 ns	3.2 ns	3.5 ns	3.2 ns
JESD-30 代码	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B119	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	22 mm	15 mm	22 mm	22 mm	15 mm	15 mm	15 mm	20 mm	20 mm	22 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
内存宽度	36	36	36	18	18	36	18	36	36	18
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	119	165	119	119	165	165	165	100	100	119
字数	262144 words	262144 words	262144 words	524288 words	524288 words	262144 words	524288 words	262144 words	262144 words	524288 words
字数代码	256000	256000	256000	512000	512000	256000	512000	256000	256000	512000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	256KX36	256KX36	256KX36	512KX18	512KX18	256KX36	512KX18	256KX36	256KX36	512KX18
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	TBGA	BGA	BGA	TBGA	TBGA	TBGA	LQFP	LQFP	BGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY	GRID ARRAY	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225	240	240	225
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	2.36 mm	1.2 mm	2.36 mm	2.36 mm	1.2 mm	1.2 mm	1.2 mm	1.6 mm	1.6 mm	2.36 mm
最大供电电压 (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V
最小供电电压 (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	GULL WING	GULL WING	BALL
端子节距	1.27 mm	1 mm	1.27 mm	1.27 mm	1 mm	1 mm	1 mm	0.65 mm	0.65 mm	1.27 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20	20	20
宽度	14 mm	13 mm	14 mm	14 mm	13 mm	13 mm	13 mm	14 mm	14 mm	14 mm

IDT71T65612S166BG

IDT71T65612S166BG概述

IDT71T65612S166BG规格参数

IDT71T65612S166BG相似产品对比

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