PNP Silicon AF Transistors
BC 856 ... BC 860
Features
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Low noise between 30 Hz and 15 kHz
q
Complementary types: BC 846, BC 847,
BC 849, BC 850 (NPN)
Type
BC 856 A
BC 856 B
BC 857 A
BC 857 B
BC 857 C
BC 858 A
BC 858 B
BC 858 C
BC 859 A
BC 859 B
BC 859 C
BC 860 B
BC 860 C
Marking
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Ordering Code
(tape and reel)
Q62702-C1773
Q62702-C1886
Q62702-C1850
Q62702-C1688
Q62702-C1851
Q62702-C1742
Q62702-C1698
Q62702-C1507
Q62702-C1887
Q62702-C1774
Q62702-C1761
Q62702-C1888
Q62702-C1889
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
1)
For
detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 856 ... BC 860
Maximum Ratings
Parameter
Symbol
BC 856
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Peak emitter current
Total power dissipation,
T
S
= 71 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
R
th JA
R
th JS
≤
310
≤
240
Values
BC 857
BC 860
45
50
50
5
100
200
200
200
330
150
Unit
BC 858
BC 859
30
30
30
5
mA
V
V
CE0
V
CB0
V
CES
V
EB0
I
C
I
CM
I
BM
I
EM
P
tot
T
j
T
stg
65
80
80
5
mW
˚C
– 65 … + 150
K/W
1)
Package
mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
2
BC 856 ... BC 860
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-base breakdown voltage
I
C
= 10
µ
A
BC 856
BC 857, BC 860
BC 858, BC 859
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
V
BE
= 0
BC 856
BC 857, BC 860
BC 858, BC 859
Emitter-base breakdown voltage
I
E
= 1
µ
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 ˚C
DC current gain
I
C
= 10
µ
A,
V
CE
= 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
I
C
= 2 mA,
V
CE
= 5 V
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1)
Pulse
Values
typ.
max.
Unit
V
(BR)CE0
65
45
30
V
(BR)CB0
80
50
30
V
(BR)CES
80
50
30
V
(BR)EB0
I
CB0
–
–
h
FE
–
–
–
125
220
420
V
CEsat
–
–
V
BEsat
–
–
V
BE(on)
600
–
650
–
750
820
700
850
–
–
75
250
300
650
140
250
480
180
290
520
–
–
–
250
475
800
1
–
15
4
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
nA
µ
A
–
mV
test:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
3
BC 856 ... BC 860
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
CB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
BC 856 A … BC 859 A
BC 856 B … BC 860 B
BC 857 C … BC 860 C
Noise figure
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 kΩ
f
= 30 Hz … 15 kHz
BC 859
BC 860
BC 859
f
= 1 kHz,
∆
f
= 200 Hz
BC 860
Equivalent noise voltage
I
C
= 0.2 mA,
V
CE
= 5 V,
R
S
= 2 kΩ
f
= 10 Hz … 50 Hz
BC 860
Semiconductor Group
4
Values
typ.
max.
Unit
f
T
C
obo
C
ibo
h
11e
–
–
–
250
3
8
–
–
–
MHz
pF
kΩ
–
–
–
2.7
4.5
8.7
–
–
–
10
– 4
–
–
–
1.5
2.0
3.0
–
–
–
–
–
–
–
200
330
600
–
–
–
µ
S
h
12e
h
21e
h
22e
–
–
–
F
–
–
–
–
V
n
–
1.2
1.0
1.0
1.0
–
4
3
4
4
0.110
18
30
60
–
–
–
dB
µ
V
BC 856 ... BC 860
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
CB0
=
f
(V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(V
EB0
)
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Semiconductor Group
5
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