Pb Free Product
http://www.ncepower.com
NCE1507IA
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE1507IA uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
D
G
S
General Features
●
V
DS
= 150V,I
D
= 7A
R
DS(ON)
< 290mΩ @ V
GS
=10V (Typ:255mΩ)
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
Power switching application
●
Hard switched and high frequency circuits
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
NCE1507IA
Device
NCE1507IA
Device Package
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
150
±20
7
50
30
-55 To 175
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
5
℃
/W
Wuxi NCE Power Semiconductor Co., Ltd
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NCE1507IA
Condition
V
GS
=0V I
D
=250μA
V
DS
=150V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=5A
V
DS
=15V,I
D
=1.5A
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2A
-
-
-
-
1.2
7
V
A
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=75V,I
D
=1.5A,
V
GS
=10V
V
DD
=75V,I
D
=1A,R
L
=75Ω
V
GS
=10V,R
G
=6Ω
-
-
-
-
-
-
-
8
10
20
15
8
1.4
2.1
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,
F=1.0MHz
-
-
-
235
36
20
-
-
-
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
1.5
-
-
2
255
3
2.5
290
-
V
mΩ
S
BV
DSS
I
DSS
I
GSS
150
-
-
-
-
-
-
1
±100
V
μA
nA
Symbol
Min
Typ
Max
Unit
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Pb Free Product
http://www.ncepower.com
NCE1507IA
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to product
Test Circuit
1) E
AS
Test Circuit
2）Gate Charge Test Circuit
3）Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
NCE1507IA
http://www.ncepower.com
Pb-Free Product
Typical Electrical and Thermal Characteristics (Curves)
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson- Junction Temperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
Rdson On-Resistance(
Ω)
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
v1.0
NCE1507IA
http://www.ncepower.com
Pb-Free Product
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
Vth (V) Variance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 V
GS(th)
vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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