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MX28F128J3XCC-15C1

产品描述Flash, 8MX16, 150ns, PBGA64, 10 X 13 MM, 1.20 MM HEIGHT, 1 MM PITCH, PLASTIC, CSP-64
产品类别存储    存储   
文件大小2MB,共56页
制造商Macronix
官网地址http://www.macronix.com/en-us/Pages/default.aspx
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MX28F128J3XCC-15C1概述

Flash, 8MX16, 150ns, PBGA64, 10 X 13 MM, 1.20 MM HEIGHT, 1 MM PITCH, PLASTIC, CSP-64

MX28F128J3XCC-15C1规格参数

参数名称属性值
厂商名称Macronix
零件包装代码BGA
包装说明TBGA,
针数64
Reach Compliance Codeunknown
ECCN代码3A991.B.1.A
最长访问时间150 ns
JESD-30 代码R-PBGA-B64
JESD-609代码e0
长度13 mm
内存密度134217728 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
端子数量64
字数8388608 words
字数代码8000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX16
封装主体材料PLASTIC/EPOXY
封装代码TBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE
并行/串行PARALLEL
编程电压3 V
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN LEAD
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度10 mm

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ADVANCED INFORMATION
MX28F320J3/640J3/128J3
32M/64M/128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
FEATURES
• 2.7V to 3.6V operation voltage
• Block Structure
- 32 x 128Kbyte Erase Blocks (32M)
- 64 x 128Kbyte Erase Blocks (64M)
- 128 x 128Kbyte Erase Blocks (128M)
• Fast random / page mode access time
- 120/25 ns Read Access Time (32M)
- 120/25 ns Read Access Time (64M)
- 150/25 ns Read Access Time (128M)
• 128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User Programmable OTP Cells
• 32-Byte Write Buffer
- 6 us/byte Effective Programming Time
• Enhanced Data Protection Features Absolute Protec-
tion with VPEN = GND
- Flexible Block Locking
- Block Erase/Program Lockout during Power Transi-
tions
Software Feature
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Automation Suspend Options
- Block Erase Suspend to Read
- Block Erase Suspend to Program
- Program Suspend to Read
Hardware Feature(Not for 48-TSOP/48-RTSOP)
• A0 pin
- Select low byte address when device is in byte mode.
Not used in word mode.
• STS pin
- Indicates the status of the internal state machine.
• VPEN pin
- For Erase /Program/ Block Lock enable.
• VCCQ Pin
- The output buffer power supply, control the device 's
output voltage.
Performance
• Low power dissipation
- typical 15mA active current for page mode read
- 80uA/(max.) standby current
- Deep power-down current: 5uA
• High Performance
- Block erase time: 2s typ.
- Byte programming time: 210us typ.
- Block programming time: 0.8s typ. (using Write to
Buffer Command)
• Program/Erase Endurance cycles:
five grades-- "C1" stands for 10 cycles
"C2" stands for 100 cycles
"C3" stands for 1,000 cycles
"C4" stands for 10,000 cycles
"C5" stands for 100,000 cycles
(please refer to Ordering Information of page 47)
Packaging
- 48-Lead TSOP (for MX28F128J3)
- 48-Lead RTSOP (for MX28F128J3)
- 56-Lead TSOP
- 48-ball Flip Chip CSP (for MX28F320J3/640J3)
- 64-ball CSP
Technology
- MX28F128J3 using Nbit (0.25u) Flash Technology
- MX28F320J3/640J3 using Nbit (0.35u) Flash Tech-
nology
P/N:PM0858
REV. 0.4, JUN. 07, 2002
1

 
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