THIS DOCUMENT IS FOR MAINTENANCE
PURPOSES ONLY AND IS NOT
RECOMMENDED FOR NEW DESIGNS
MA6116 & MA6216
MARCH 1995
DS3582-3.1
MA6116 & MA6216
RADIATION HARD 2048 x 8 BIT STATIC RAM
The MA6116 16k Static RAM is configured as 2048 x 8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology. The MA6216 is manufactured using 2.5µm technology
resulting in faster performance.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
Operation Mode
Read
Write
Write
Standby
CS
L
L
L
H
OE WE
L
H
L
X
H
L
L
X
I/O
D OUT
D IN
D IN
High Z
ISB2
ISB1
Power
FEATURES
s
3µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 110ns (MA6116) and 85ns
(MA6216) Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
10
Rad(Si)/sec
s
SEU <10
-10
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 100µA Typical
s
-55°C to +125°C Operation
s
TTL and CMOS Compatible Inputs
s
Fully Static Operation
Figure 1: Truth Table
Figure 2: Block Diagram
1
MA6116 & MA6216
CHARACTERISTICS AND RATINGS
Symbol
V
DD
V
I
T
A
T
S
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7
V
DD
+0.3
125
150
Units
V
V
°C
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Figure 3: Absolute Maximum Ratings
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V
±10%
and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V
±10%
(characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125°C, guaranteed but not tested at T
A
= -55°C.
3. GROUP A SUBGROUPS 1, 2, 3.
Symbol
V
DD
V
lH
V
lL
V
OH
V
OL
I
LI
I
LO
I
DD
I
SB1
I
SB2
Parameter
Supply voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current (note 2)
Output Leakage Current (note 2)
Power Supply Current
Selected Supply Current
Standby Supply Current
Conditions
-
-
-
I
OH1
= -1mA
I
OL
= 4mA
All inputs except
CS
Output disabled, V
OUT
= V
SS
or V
DD
f
RC
= 1MHz,
CS
= 50% mark:space
All inputs = V
DD
-0.2V except
CS
= V
SS
+0.2V
Chip disabled,
CS
= V
DD
-0.2V
Min.
4.5
V
DD
/2
V
SS
2.4
-
-
-
-
-
-
Typ.
5.0
-
-
-
-
-
-
20
50
0.1
Max.
5.5
V
DD
0.8
-
0.4
±10
±20
40
70
5
Units
V
V
V
V
V
µA
µA
mA
mA
mA
Figure 4: Electrical Characteristics
Symbol
V
DR
I
DDR
Parameter
V
CC
for Data Retention
Data Retention Current
Conditions
CS
= V
DR
CS
= V
DR
, V
DR
= 2.0V
Min.
2.0
-
Typ.
-
50
Max.
-
3000
Units
V
µA
Figure 5: Data Retention Characteristics
2
MA6116 & MA6216
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
SS
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Output load 1TTL gate and C
L
= 60pF.
4. Transition is measured at
±500mV
from steady state.
5. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V
±10%.
GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAVR
T
AVQV
T
ELQV
T
ELQX
(4,5)
T
GLQV
T
GLQX
(4,5)
T
EHQZ
(4,5)
T
GHQZ
(4,5)
T
AXQX
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select to Output in Low Z
Output Enable to Output Valid
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Chip Disable to Output in High Z
Output Hold from Address Change
MA6116
Min Max
150
-
-
10
-
10
0
0
10
-
130
140
-
80
-
60
60
-
MA6216
Min Max
100
-
-
10
-
10
0
0
10
-
95
100
-
60
-
50
50
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
T
AVAVW
T
ELWH
T
AVWH
T
AVWL
T
WLWH
T
WHAV
T
WLQZ
(4,5)
T
DVWH
T
WHDX
T
WHQX
(4,5)
T
ELWL
Parameter
Write Cycle Tlme
Chip Selection to End of Write
Address Valid to End of Write
Address Set Up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End to Write
Chip Selection to Write Low
MA6116
Min Max
150
85
80
20
50
5
0
30
10
5
25
-
-
-
-
-
-
60
-
-
-
-
MA6216
Min Max
100
75
70
10
40
5
0
25
10
5
25
-
-
-
-
-
-
50
-
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
O
= 0V
Min.
-
-
Typ.
6
5
Max.
10
7
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
3
MA6116 & MA6216
Symbol
F
T
Parameter
Basic Functionality
Conditions
V
DD
= 4.5V - 5.5V, FREQ = 1MHz
V
IL
= V
SS
, V
IH
= V
DD
, V
OL
≤
1.5V, V
OH
≥
1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Tables 4 and 5 at +25°C
Static characteristics specified in Tables 4 and 5 at +125°C
Static characteristics specified in Tables 4 and 5 at -55°C
Functional characteristics specified in Table 9 at +25°C
Functional characteristics specified in Table 9 at +125°C
Functional characteristics specified in Table 9 at -55°C
Switching characteristics specified in Tables 6 and 7 at +25°C
Switching characteristics specified in Tables 6 and 7 at +125°C
Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
4
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
