TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | SC-64 |
| 包装说明 | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 140 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 3 A |
| 最大漏源导通电阻 | 0.45 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 12 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| 2SK2201(2-7J1B) | 2SK2201TE16R | 2SK2201TE16L | 2SK2201LBTE16L | 2SK2201STA1 | 2SK2201LBTE16R | |
|---|---|---|---|---|---|---|
| 描述 | TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power | TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power | TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERMOLD, DPAK-3, FET General Purpose Power | TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power |
| 包装说明 | LEAD FREE, 2-7J1B, SC-64, 3 PIN | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | DPAK-3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| 最大漏源导通电阻 | 0.45 Ω | 0.45 Ω | 0.45 Ω | 0.35 Ω | 0.35 Ω | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 3 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | NO | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| 针数 | 3 | - | - | 3 | 3 | 3 |
| 外壳连接 | DRAIN | DRAIN | DRAIN | - | DRAIN | - |
| 功耗环境最大值 | - | 20 W | 20 W | 20 W | 20 W | 20 W |
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