HPND- 4005
Beam Lead PIN Diode
Data Sheet
Description
The HPND-4005 planar beam lead PIN diode is
constructed to offer exceptional lead strength while
achieving excellent electrical performance at high
frequencies. High beam strength offers users superior
assembly yield, while extremely low capacitance allows
high isolation to be realized.
Nitride passivation and polyimide coating provide
reliable device protection.
Features
• High Breakdown Voltage: 120 V Typical
• Low Capacitance: 0.017 pF Typical
• Low Resistance: 4.7 W Typical
• Rugged Construction: 4 Grams Minimum Lead Pull
• Nitride Passivated
Applications
The HPND-4005 beam lead PIN diode is designed for use
in stripline or microstrip circuits. Applications include
switching, attenuating, phase shifting, limiting, and
modulating at microwave frequencies. The extremely
low capacitance of the HPND-4005 makes it ideal for
circuits requiring high isolation in a series diode config-
uration.
Outline 21
GOLD LEADS
S
1
O
2
/Si
3
N
4
PASSIVATION
130 (5.1)
110 (4.3)
130 (5.1)
110 (4.3)
CATHODE
110 (4.3)
80 (3.1)
Maximum Ratings
Operating Temperature
Storage Temperature
Power Dissipation at TCASE = 25°C
(Derate linearly to zero at 175°C.)
Minimum Lead Strength
Diode Mounting Temp
-65°C to +175°C
-65°C to +200°C
250 mW
4 grams pull on either lead
220°C for 10 sec. max.
220 (8.7)
180 (7.1)
DIMENSIONS IN µm (1/1000 inch)
320 (12.6)
280 (11.0)
8 (0.3) Min.
760 (29.9)
640 (25.2)
60 (2.4)
30 (1.2)
GLASS
220 (8.7)
180 (7.1)
SILICON
25 MIN (1.0)
Bonding and Handling Procedures for Beam Lead Diodes
1. Storage
Under normal circumstances, storage of beam lead
diodes in Avago-supplied waffle/gel packs is sufficient.
In particularly dusty or chemically hazardous environ-
ments, storage in an inert atmosphere desiccator is
advised.
4. Bonding
Thermocompression:
See Application Note 979 “The
Handling and Bonding of Beam Lead Devices Made
Easy”. This method is good for hard substrates only.
Wobble:
This method picks up the device, places it on
the substrate and forms a thermo-compression bond all
in one operation. This is described in the latest version
of MIL-STD-883, Method 017, and is intended for hard
substrates only.
Resistance Welding or Parallel-GAP Welding:
To make
welding on soft substrates easier, a low pressure welding
head is recommended. Suitable equipment is available
from HUGHES, Industrial Products Division in Carlsbad,
CA.
Epoxy:
With solvent free, low resistivity epoxies
(available from ABLESTIK and improvements in dispens-
ing equipment, the quality of epoxy bonds is sufficient
for many applications.
2. Handling
In order to avoid damage to beam lead devices, par-
ticular care must be exercised during inspection,
testing, and assembly. Although the beam lead diode
is designed to have exceptional lead strength, its small
size and delicate nature requires that special handling
techniques be observed so that the devices will not be
mechanically or electrically damaged. A vacuum pickup
is recommended for picking up beam lead devices, par-
ticularly larger ones, e.g., quads. Care must be exercised
to assure that the vacuum opening of the needle is suf-
ficiently small to avoid passage of the device through
the opening. A #7 tip is recommended for picking up
single beam lead devices. A 0X magnification is needed
for precise positioning of the tip on the device. Where a
vacuum pickup is not used, a sharpened wooden Q-tip
dipped in isopropyl alcohol is very commonly used to
handle beam lead devices.
5. Lead Stress
In the process of bonding a beam lead diode, a certain
amount of “bugging” occurs. The term
bugging
refers
to the chip lifting away from the substrate during the
bonding process due to the deformation of the beam by
the bonding tool. This effect is beneficial as it provides
stress relief for the diode during thermal cycling of the
substrate. The coefficient of expansion of some substrate
materials, specifically soft substrates, is such that some
bugging is essential if the circuit is to be operated over
wide temperature extremes.
Thick metal clad ground planes restrict the thermal
expansion of the dielectric substrates in the X-Y axis.
The expansion of the dielectric will then be mainly
in the Z axis, which does not affect the beam lead
device. An alternate solution to the problem of dielec-
tric ground plane expansion is to heat the substrate to
the maximum required operating temperature during
the beam lead attachment. Thus, the substrate is at
maximum expansion when the device is bonded. Sub-
sequent cooling of the substrate will cause bugging,
similar to bugging in thermocompression bonding or
epoxy bonding. Other methods of bugging are pre-
forming the leads during assembly or prestressing the
substrate.
3. Cleaning
For organic contamination use a warm rinse of trichlo-
roethane, or its locally approved equivalent, followed by
a cold rinse in acetone and methanol. Dry under infrared
heat lamp for 5–10 minutes on clean filter paper. Freon
degreaser, or its locally approved equivalent, may
replace trichloroethane for light organic contamination.
• Ultrasonic cleaning is not recommended.
• Acid solvents should not be used.
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
