Pb Free Product
http://www.ncepower.com
NCE0275
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE0275uses advanced trench technology and design to
provide excellent R
DS(ON)
with low gate charge. It can be used
in automotive applications and a wide variety of other
applications.
General Features
●
V
DSS
=200V,I
D
=75A
R
DS(ON)
< 20mΩ @ V
GS
=10V
●
Good stability and uniformity with high E
AS
●
Special process technology for high ESD capability
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
Automotive applications
●
Hard switched and high frequency circuits
●
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
NCE0275
Device
NCE0275
Device Package
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 3)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DSS
V
GS
I
D
I
D
(100℃)
Limit
200
±20
75
53
300
360
2.4
1512
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
Pb Free Product
http://www.ncepower.com
NCE0275
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 1)
R
θJC
0.42
℃
/W
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
Qrr
Condition
V
GS
=0V I
D
=250μA
V
DS
=200V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
V
DS
=50V,I
D
=40A
Min
200
-
-
2.5
-
Typ
-
-
-
3.5
17.8
79
Max
-
1
±200
4.5
20
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
nS
nC
V
DS
=50V,V
GS
=0V,
F=1.0MHz
-
-
-
-
6990
950
700
17
18
56
22
140
40
45
-
136
458
V
DD
=100V,I
D
=40A,
V
GS
=10V,R
G
=2.7Ω
-
-
-
-
ID=40A,VDD=100V,VGS=10V
-
-
V
GS
=0V,I
S
=75A
TJ = 25°C, IF = 40A
di/dt = 100A/μs
(Note2)
-
-
-
Notes:
1. Surface Mounted on FR4 Board, t
≤
10 sec.
2. Pulse Test: Pulse Width
≤
400μs, Duty Cycle
≤
2%.
3. EAS condition：Tj=25℃,V
DD
=50V,V
G
=10V,L=1mH,Rg=25Ω,I
AS
=55A
4.
I
SD≤
125A, di/dt
≤
260A/μs, V
DD≤
V
(BR)DSS
，T
J
≤
175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
Pb Free Product
http://www.ncepower.com
NCE0275
Test Circuit
1）E
AS
test Circuit
2）Gate charge test Circuit
3）Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
Pb Free Product
http://www.ncepower.com
Typical Electrical and Thermal Characteristics
NCE0275
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
v1.0
Pb Free Product
http://www.ncepower.com
NCE0275
C Capacitance (pF)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 ID Current Derating vs Junction
Temperature
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Power Dissipation (W)
Figure 8 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
T
J
-Junction Temperature(℃)
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
