IL300-3052
Vishay Semiconductors
Linear Optocoupler, High Gain Stability, Wide Bandwidth
Features
•
•
•
•
•
•
•
•
•
Couples AC and DC signals
0.01 % servo linearity
Wide bandwidth, > 200 kHz
High gain stability, ± 0.05 %/ °C
Low input-output capacitance
Low power consumption, < 15 mW
Isolation test voltage, 5300 V
RMS
, 1.0 s
Internal insulation distance, > 0.4 mm for VDE
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
C 1
A 2
C 3
A 4
K1
K2
8 NC
7
NC
6 C
5 A
i179026
Agency Approvals
• UL File #E52744
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
available with option 1, add -X001 Suffix
Description
The IL300 Linear Optocoupler consists of an AlGaAs
IRLED irradiating an isolated feedback and an output
PIN photodiode in a bifurcated arrangement. The
feedback photodiode captures a percentage of the
LED’s flux and generates a control signal (I
P1
) that
can be used to servo the LED drive current. This
technique compensates for the LED’s non-linear,
time, and temperature characteristics. The output PIN
photodiode produces an output signal (I
P2
) that is
linearly related to the servo optical flux created by the
LED.
The time and temperature stability of the input-output
coupler gain (K3) is insured by using matched PIN
photodiodes that accurately track the output flux of
the LED.
Applications
•
•
•
•
•
Power supply feedback voltage/current
Medical sensor isolation
Audio signal interfacing
Isolated process control transducers
Digital telephone isolation
Customer Specific Information
• This is a custom product for ISOCOM.
• The product is marked as IS300 with ISOCOM
logo"I".
• Product will be shipped in unmarked rails in
unmarked cartons.
Order Information
Part
IL300-3052
Remarks
K3 = 0.557 - 1.618, DIP-8
Document Number 81722
Rev. 1.0, 27-Jun-07
www.vishay.com
1
IL300-3052
Vishay Semiconductors
Operation Description
A typical application circuit (Figure 1) uses an
operational amplifier at the circuit input to drive the
LED. The feedback photodiode sources current to R1
connected to the inverting input of U1. The
photocurrent, I
P1
, will be of a magnitude to satisfy the
relationship of (I
P1
= V
IN
/R1).
The magnitude of this current is directly proportional
to the feedback transfer gain (K1) times the LED drive
current ( V
IN
/R1 = K1 • I
F
). The op-amp will supply
LED current to force sufficient photocurrent to keep
the node voltage (Vb) equal to Va.
The output photodiode is connected to a non-
inverting voltage follower amplifier. The photodiode
load resistor, R2, performs the current to voltage
conversion. The output amplifier voltage is the
product of the output forward gain (K2) times the LED
current and photodiode load, R2 ( V
O
= I
F
• K2 • R2).
Therefore, the overall transfer gain (V
O
/V
IN
) becomes
the ratio of the product of the output forward gain (K2)
times the photodiode load resistor (R2) to the product
of the feedback transfer gain (K1) times the input
resistor (R1). This reduces to
V
O
/V
IN
=(K2 • R2)/(K1 • R1).
The overall transfer gain is completely independent of
the LED forward current. The IL300 transfer gain (K3)
is expressed as the ratio of the output gain (K2) to the
feedback gain (K1). This shows that the circuit gain
becomes the product of the IL300 transfer gain times
the ratio of the output to input resistors
V
O
/V
IN
= K3 (R2/R1).
ΔK3-Transfer
Gain Linearity
The percent deviation of the Transfer Gain, as a
function of LED or temperature from a specific
Transfer Gain at a fixed
LED current and temperature.
Photodiode
A silicon diode operating as a current source. The
output current is proportional to the incident optical
flux supplied by the LED emitter. The diode is
operated in the photovoltaic or photoconductive
mode. In the photovoltaic mode the diode functions
as a current source in parallel with a forward biased
silicon diode.
The magnitude of the output current and voltage is
dependent upon the load resistor and the incident
LED optical flux. When operated in the
photoconductive mode the diode is connected to a
bias supply which reverse biases the silicon diode.
The magnitude of the output current is directly
proportional to the LED incident optical flux.
LED (Light Emitting Diode)
An infrared emitter constructed of AlGaAs that emits
at 890 nm operates efficiently with drive current from
500
μA
to 40 mA. Best linearity can be obtained at
drive currents between 5.0 mA to 20 mA. Its output
flux typically changes by - 0.5 % /°C over the above
operational current range.
Application Circuit
K1-Servo Gain
The ratio of the input photodiode current (I
P1
) to the
LED current (I
F
) i.e., K1 = I
P1
/I
F
.
K2-Forward Gain
The ratio of the output photodiode current (I
P2
) to the
LED current (I
F
), i.e., K2 = I
P2
/I
F
.
V
CC
Va
+
Vin
Vb
-
1
+
U1
2
IF
V
CC 3
4
lp1
R1
K1
IL300
8
7
6
V
CC
5
lp2
V
c
R2
-
U2
+
V
out
K2
V
CC
K3-Transfer Gain
The Transfer Gain is the ratio of the Forward Gain to
the Servo gain, i.e., K3 = K2/K1.
iil300_01
Figure 1. Typical Application Circuit
www.vishay.com
2
Document Number 81722
Rev. 1.0, 27-Jun-07
IL300-3052
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Power dissipation
Derate linearly from 25 °C
Forward current
Surge current (pulse width < 10
μs)
Reverse voltage
Thermal resistance
Junction temperature
I
F
I
PK
V
R
R
th
T
j
Test condition
Symbol
P
diss
Value
160
2.13
60
250
5.0
470
100
Unit
mW
mW/°C
mA
mA
V
K/W
°C
Output
Parameter
Power dissipation
Derate linearly from 25 °C
Reverse voltage
Junction temperature
Thermal resistance
V
R
T
j
R
th
Test condition
Symbol
P
diss
Value
50
0.65
50
100
1500
Unit
mA
mW/°C
V
°C
K/W
Coupler
Parameter
Total package dissipation at
25 °C
Derate linearly from 25 °C
Storage temperature
Operating temperature
Isolation test voltage
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
Test condition
Symbol
P
tot
Value
210
2.8
- 55 to + 150
- 55 to + 100
> 5300
> 10
12
> 10
11
Unit
mW
mW/°C
°C
°C
V
RMS
Ω
Ω
Document Number 81722
Rev. 1.0, 27-Jun-07
www.vishay.com
3
IL300-3052
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
LED Emitter
Parameter
Forward voltage
V
F
Temperature coefficient
Reverse current
Junction capacitance
Dynamic resistance
V
R
= 5 V
V
F
= 0 V, f = 1.0 MHz
I
F
= 10 mA
Test condition
I
F
= 10 mA
Symbol
V
F
ΔV
F
/Δ °C
I
R
C
j
ΔV
F
/ΔI
F
Min
Typ.
1.25
- 2.2
1.0
15
6.0
Max
1.50
Unit
V
mV/°C
µA
pF
Ω
Output
Parameter
Dark current
Open circuit voltage
Short circuit current
Junction capacitance
Noise equivalent power
Test condition
V
det
= -15 V, I
F
= 0 µs
I
F
= 10 mA
I
F
= 10 mA
V
F
= 0, f = 1.0 MHz
V
det
= 15 V
Symbol
I
D
V
D
I
SC
C
j
NEP
Min
Typ.
1.0
500
70
12
4 x 10
14
Max
25
Unit
nA
mV
µA
pF
W/√Hz
Coupler
Parameter
Input- output capacitance
K1, Servo gain (I
P1
/I
F
)
Servo current
K2, Forward gain (I
P2
/I
F
)
Forward current
K3, Transfer gain (K2/K1)
Transfer gain linearity
Test condition
V
F
= 0 V, f = 1.0 MHz
I
F
= 10 mA, V
det
= - 15 V
I
F
= 10 mA, V
det
= - 15 V
I
F
= 10 mA, V
det
= - 15 V
I
F
= 10 mA, V
det
= - 15 V
I
F
= 10 mA, V
det
= - 15 V
I
F
= 1.0 to 10 mA
I
F
= 1.0 to 10 mA,
T
amb
= 0 °C to 75 °C
Photoconductive Operation
Frequency response
Phase response at 200 kHz
I
Fq
= 10 mA, MOD = ± 4.0 mA,
R
L
= 50
Ω
V
det
= - 15 V
BW (-3 db)
200
-45
KHz
Deg.
K1
I
P1
K2
I
P2
K3
ΔK3
0.56
0.0036
0.0050
Symbol
Min
Typ.
1.0
0.007
70
0.007
70
1.00
± 0.25
± 0.5
1.65
0.011
µA
K2/K1
%
%
0.011
µA
Max
Unit
pF
Switching Characteristics
Parameter
Switching time
Rise time
Fall time
Test condition
ΔI
F
= 2.0 mA, I
Fq
= 10 mA
Symbol
t
r
t
f
t
r
t
f
Min
Typ.
1.0
1.0
1.75
1.75
Max
Unit
μs
μs
μs
μs
Common Mode Transient Immunity
Parameter
Common mode capacitance
Common mode rejection ratio
Test condition
V
F
= 0, f = 1. MHz
f = 60 Hz, R
L
= 2.2 KΩ
Symbol
C
CM
CMRR
Min
Typ.
0.5
130
Max
Unit
pF
dB
www.vishay.com
4
Document Number 81722
Rev. 1.0, 27-Jun-07
IL300-3052
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
1000
IP1 - Servo Photocurrent (µA)
0 °C
25 °C
50 °C
75 °C
V
D = - 15
V
35
IF - LED Current (mA)
30
25
20
15
10
5
0
1.0
iil300_02
100
10
1.1
1.2
1.3
VF
- LED Forward
Voltage
(V)
1.4
iil300_05
1
0.1
1
10
100
IF - LED Current (mA)
Figure 2. LED Forward Current vs.Forward Voltage
Figure 5. Servo Photocurrent vs. LED Current and Temperature
100
3.0
Normalized
Photocurrent
2.5
2.0
1.5
1.0
0.5
0.0
0
iil300_06
IF - LED Current (mA)
10
Normalized
to: IP1 at I F = 10 mA
TA = 25 °C
0 °C
V
D = - 15
V
25 °C
50 °C
75 °C
1
0.1
1.0
iil300_03
1.1
1.2
1.3
VF
- LED Forward
Voltage
(V)
1.4
5
10
15
IF - LED Current (mA)
20
25
Figure 3. LED Forward Current vs.Forward Voltage
Figure 6. Normalized Servo Photocurrent vs.
LED Current and Temperature
300
250
200
150
100
50
0
0.1
iil300_04
10
IP1 -
Normalized
Photocurrent
0 °C
25 °C
50 °C
75 °C
V
D = 15
V
Normalized
to: IP1 at I F = 10 mA
TA = 25 °C
0 °C
V
D = - 15
V
25 °C
50 °C
75 °C
IP1 - Servo Photocurrent (µA)
1
0.1
1
10
IF - LED Current (mA)
100
0.01
0.1
iil300_07
1
10
100
IF - LED Current (mA)
Figure 4. Servo Photocurrent vs. LED Current and Temperature
Figure 7. Normalized Servo Photocurrent vs.
LED Current and Temperature
Document Number 81722
Rev. 1.0, 27-Jun-07
www.vishay.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
