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2SA1242Y(2-7B1A)

产品描述TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小150KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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2SA1242Y(2-7B1A)概述

TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

2SA1242Y(2-7B1A)规格参数

参数名称属性值
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknow
外壳连接COLLECTOR
最大集电极电流 (IC)5 A
集电极-发射极最大电压20 V
配置SINGLE
最小直流电流增益 (hFE)160
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)170 MHz
Base Number Matches1

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2SA1242
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1242
Strobe Flash Applications
Medium Power Amplifier Applications
Excellent h
FE
linearity
: h
FE (1)
= 100 to 320 (V
CE
=
−2
V, I
C
=
−0.5
A)
: h
FE (2)
= 70 (min) (V
CE
=
−2
V, I
C
=
−4
A)
Low collector saturation voltage
: V
CE (sat)
=
−1.0
V (max) (I
C
=
−4
A, I
B
=
−0.1
A)
High power dissipation
: P
C
= 10 W (Tc = 25°C), P
C
= 1.0 W (Ta = 25°C)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Pulsed
(Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
−35
−20
−8
−5
−8
−0.5
1.0
10
150
−55
to 150
A
A
W
°C
°C
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-08-27

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