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MJD112
MJD112
D-PAK for Surface Mount Applications
•
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP112
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Value
100
100
5
2
4
50
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
°C
°C
R1
R2
E
B
Equivalent Circuit
C
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 50V, I
B
= 0
V
CB
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3A, I
C
= 2A
V
CE
= 10V, I
C
= 0.75A
V
CB
= 10V, I
E
= 0
f = 0.1MHz
25
100
500
1000
200
Min.
100
Max.
20
20
2
12K
2
3
4
2.8
V
V
V
V
MHz
pF
Units
V
µA
µA
mA
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD112
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10000
10
V
CE
= 3V
I
C
= 250 I
B
h
FE
, DC CURRENT GAIN
V
BE
(sat)
1
1000
V
CE
(sat)
100
0.1
10
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
V
CC
=30V
I
C
=250I
B
C
ob
[pF], CAPACITANCE
100
t
R
,t
D
[
µ
s], TURN ON TIME
1
10
t
R
t
D
1
0.1
1
10
100
0.1
0.01
0.1
1
10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10
10
V
CC
=30V
I
C
=250I
B
10
s
0
µ
I
C
[A], COLLECTOR CURRENT
t
STG
,t
F
[
µ
s], TURN OFF TIME
t
STG
1
DC
1
5m ms
s
1
t
F
0.1
0.1
0.01
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD112
Typical Characteristics
(Continued)
25
P
C
[W], POWER DISSIPATION
20
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD112
Package Demensions
D-PAK
6.60
±0.20
5.34
±0.30
(0.50)
(4.34)
(0.50)
0.70
±0.20
2.30
±0.10
0.50
±0.10
0.60
±0.20
6.10
±0.20
2.70
±0.20
9.50
±0.30
0.91
±0.10
0.80
±0.20
MAX0.96
2.30TYP
[2.30±0.20]
0.76
±0.10
2.30TYP
[2.30±0.20]
0.89
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(0.70)
(0.90)
(0.10)
(3.05)
6.10
±0.20
9.50
±0.30
2.70
±0.20
(2XR0.25)
0.76
±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
(1.00)
6.60
±0.20
(5.34)
(5.04)
(1.50)
MIN0.55
嵌入式系统
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