RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-226AA
| 参数名称 | 属性值 |
| 厂商名称 | Vishay(威世) |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown |
| 其他特性 | LOW NOISE |
| 配置 | SINGLE |
| FET 技术 | JUNCTION |
| JEDEC-95代码 | TO-226AA |
| JESD-30 代码 | O-PBCY-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| J210L | J211L18 | J211L-18 | J210L-18 | J210L18 | 15SMBJ17A | J212L-18 | J211L | J212L | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-226AA | Si, RF SMALL SIGNAL, FET, TO-226AA | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA | Si, RF SMALL SIGNAL, FET, TO-226AA | Surface Mount Transient Voltage Suppressors | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-226AA | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-226AA |
| 厂商名称 | Vishay(威世) | - | - | Vishay(威世) | Vishay(威世) | - | Vishay(威世) | Vishay(威世) | Vishay(威世) |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | - | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown | unknow | unknow | unknown | unknown | - | unknown | unknown | unknow |
| 其他特性 | LOW NOISE | - | LOW NOISE | LOW NOISE | - | - | LOW NOISE | LOW NOISE | LOW NOISE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE |
| FET 技术 | JUNCTION | - | JUNCTION | JUNCTION | - | - | JUNCTION | JUNCTION | JUNCTION |
| JEDEC-95代码 | TO-226AA | TO-226AA | TO-226AA | TO-226AA | TO-226AA | - | TO-226AA | TO-226AA | TO-226AA |
| JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | - | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | - | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | - | 3 | 3 | 3 |
| 工作模式 | DEPLETION MODE | - | DEPLETION MODE | DEPLETION MODE | - | - | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 150 °C | 135 °C | 150 °C | 150 °C | 135 °C | - | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | - | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO | - | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | - | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM | BOTTOM | BOTTOM |
| 晶体管应用 | SWITCHING | AMPLIFIER | SWITCHING | SWITCHING | AMPLIFIER | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON |
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