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TSH150IDT

产品描述OP-AMP, 7000uV OFFSET-MAX, 150MHz BAND WIDTH, PDSO8, MICRO, PLASTIC, SO-8
产品类别模拟混合信号IC    放大器电路   
文件大小77KB,共6页
制造商ST(意法半导体)
官网地址http://www.st.com/
标准
下载文档 详细参数 全文预览

TSH150IDT概述

OP-AMP, 7000uV OFFSET-MAX, 150MHz BAND WIDTH, PDSO8, MICRO, PLASTIC, SO-8

TSH150IDT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ST(意法半导体)
零件包装代码SOIC
包装说明MICRO, PLASTIC, SO-8
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
放大器类型OPERATIONAL AMPLIFIER
架构VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)30 µA
25C 时的最大偏置电流 (IIB)30 µA
标称共模抑制比100 dB
频率补偿YES
最大输入失调电压7000 µV
JESD-30 代码R-PDSO-G8
JESD-609代码e4
长度4.9 mm
低-失调NO
负供电电压上限-7 V
标称负供电电压 (Vsup)-5 V
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
包装方法TAPE AND REEL
峰值回流温度(摄氏度)260
电源+-3/+-5 V
认证状态Not Qualified
座面最大高度1.75 mm
最小摆率100 V/us
标称压摆率190 V/us
最大压摆率40 mA
供电电压上限7 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术BICMOS
温度等级AUTOMOTIVE
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
标称均一增益带宽150000 kHz
最小电压增益200
宽带YES
宽度3.9 mm

TSH150IDT文档预览

TSH150
WIDE BANDWIDTH AND BIPOLAR INPUTS
SINGLE OPERATIONAL AMPLIFIER
s
s
s
s
s
LOW DISTORTION
GAIN BANDWIDTH PRODUCT : 150MHz
UNITY GAIN STABLE
SLEW RATE : 190V/µs
VERY FAST SETTLING TIME : 20ns (0.1%)
D
SO8
(Plastic Micropackage)
DESCRIPTION
The TSH150 is a wideband monolithic operational
amplifier, internally compensated for unity-gain
stability.
Low noise and low distortion, wide bandwidth and
high linearity make this amplifier suitable for RF
and video applications. Short circuit protection is
provided by an internal current-limiting circuit.
The TSH150 has internal electrostatic discharge
(ESD)
protection
circuits
and
fulfills
MILSTD883C-Class2.
PIN CONNECTIONS
(top view)
Offset Null 1
1
2
3
4
8
Offset Null 2
ORDER CODE
Package
Part Number
TSH150I
Temperature Range
D
-40°C, +125°C
Inverting Input
Non-inverting Input
V
CC
7 V
CC
+
6
5
Output
N.C.
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
October 2000
1/6
TSH150
SCHEMATIC DIAGRAM
7 V
CC
+
non inverting
input
3
Internal
V
ref
6
output
2
inverting
input
1
Offset N1
8
C
c
Offset N2
4
V
CC
-
INPUT OFFSET VOLTAGE NULL CIRCUIT
TSH150
N1
N2
100k
W
V
CC
MAXIMUM RATINGS
Symbol
V
CC
V
id
V
i
I
in
T
oper
T
stg
Supply Voltage
Differential Input Voltage
Input Voltage
Current On Inputs
Current On Offset Null Pins
Operating Free-Air Temperature range
Storage Temperature Range
Parameter
Value
±7
±5
±5
±50
±20
-40 to +125
-65 to +150
Unit
V
V
V
V
°C
°C
OPERATING CONDITIONS
Symbol
V
CC
V
ic
Supply Voltage
Common Mode Input Voltage Range
Parameter
Value
±3 to ±6
V
CC
-
+2 to V
CC
+
-1
Unit
V
V
2/6
TSH150
ELECTRICAL CHARACTERISTICS
V
CC
= ±5V, T
amb
= 25°C (unless otherwise specified)
Symbol
V
io
DV
io
I
ib
I
io
Parameter
Input Offset Voltage
T
min
.
T
amb
T
max
Input Offset Voltage Drift
T
min
.
T
amb
T
max.
Input Bias Current
.
Input Offset Current
.
Supply Current, no load
I
CC
T
min
.
T
amb
T
max
Avd
V
icm
CMR
SVR
V
CC
=
V
CC
=
V
CC
=
V
CC
=
±5V
±3V
±6V
±5V
800
300
200
-3 to +4
60
50
±3
±2.8
±2.9
±2.7
±50
±100
150
100
190
mA
MHz
V/µs
23
21
25
30
28
40
32
mA
Min.
Typ.
0.3
Max.
5
7
Unit
mV
µV/°C
30
2
µA
µA
10
5
0.1
Large Signal Voltage Gain Vo = ±2.5V
R
L
=
R
L
= 100Ω
R
L
= 50Ω
Input Common Mode Voltage Range
Common-mode Rejection Ratio V
ic
= V
icm min.
Supply Voltage Rejection Ratio V
CC
= ±5V to ±3V
Output Voltage
R
L
= 100Ω
1300
850
650
-3.5 to +4.5
100
70
+3.5
-3.7
+3.3
-3.5
V/V
V
dB
dB
V
o
T
min
.
T
amb
T
max
I
o
GBP
SR
R
L
= 50Ω
R
L
= 100Ω
R
L
= 50Ω
V
Output Short Circuit Current Vid = ±1V, Vo = 0V
Gain Bandwidth Product
A
VCL
= 100, R
L
= 100Ω, C
L
= 15pF, f = 7.5MHz
Slew Rate V
in
= ±2V, A
VCL
= 1, R
L
= 100Ω, C
L
= 15pF
Equivalent Input Voltage Noise
R
s
= 50Ω
e
n
f
o
= 1kHz
f
o
= 1k0Hz
f
o
= 100kHz
f
o
= 1MHz
Overshoot V
in
= ±2V, A
VCL
= 1, R
L
= 100Ω, C
L
= 15pF
Settling Time 0.1%
1)
V
in
= ±1V, A
VCL
= -1
Rise and Fall Time (see note 1)
V
in
= ±100mV, A
VCL
= 2
Delay Time (see note 1)
V
in
= ±100mV, A
VCL
= 2
Phase Margin A
VM
= 1, R
L
= 100Ω, C
L
= 15pF
Total Harmonic Distortion
A
VCL
= 10, f = 1kHz, V
o
= ±2.5V, no load
Full Power Bandwidth
2)
Vo = 5Vpp, R
L
= 100Ω
Vo = 2Vpp, R
L
= 100Ω
SR
-------------------
-
Π
V
opp
7
6.5
6.2
5.5
5
20
3.5
2.5
50
0.02
12
30
nV/√Hz
K
ov
t
s
t
r
, t
f
t
d
φm
THD
%
ns
ns
ns
Degrees
%
FPB
MHz
1. See test waveform figure
2. Full power bandwidth =
3/6
TSH150
TEST WAVEFORM
EVALUATION CIRCUIT
+5V
10µF
50Ω
t
s
0.1% of edge amplitude
10nF
Input
50Ω
Output
1kΩ
90%
t
d
50%
10nF
t
r
10%
V
in
-5V
10µF
1kΩ
C
F
PRINTED CIRCUIT LAYOUT
As for any high frequency device, a few rules must
be observed when designing the PCB to get the
best performances from this high speed op amp.
From the most to the least important points :
u
Each power supply lead has to be by-
passed to ground with a 10nF ceramic ca-
pacitor very close to the device and a 10µF
tantalum capacitor.
u
To provide low inductance and low resist-
ance common return, use a ground plane
or common point return for power and sig-
nal.
u
All leads must be wide and as short as pos-
sible especially for op amp inputs. This is in
order to decrease parasitic capacitance
and inductance.
Use small resistor values to decrease time
constant with parasitic capacitance.
Choose component sizes as small as pos-
sible (SMD).
On output, decrease capacitor load so as
to avoid circuit stability being degraded
which may cause oscillation. You can also
add a serial resistor in order to minimise its
influence.
One can add in parallel with feedback re-
sistor a few pF ceramic capacitor C
F
adjust-
ed to optimize the settling time.
u
u
u
u
4/6
TSH150
MACROMODEL
Applies to: TSH150I
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TSH150 1 3 2 4 5 (analog)
********************************************************
.MODEL MDTH D IS=1E-8 KF=1.568191E-15
CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 1.040000E+02
RIN 15 16 1.040000E+02
RIS 11 15 3.264539E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC -9.162265E-05
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-03
CPS 11 15 5.757255E-12
DINN 17 13 MDTH 400E-12
VIN 17 5 1.5000000e+00
ELECTRICAL CHARACTERISTICS
V
CC
= ±5V, T
amb
= 25°C (unless otherwise specificed)
Symbol
V
io
A
vd
I
CC
V
icm
V
OH
V
OL
I
sink
I
source
GBP
SR
φm
t
s
R
L
= 100Ω
R
L
= 100Ω
V
o
= 0V
V
o
= 0V
R
L
= 100Ω, C
L
= 15pF
R
L
= 100Ω, C
L
= 15pF
R
L
= 100Ω, C
L
= 15pF
A
v
= -1 at 0.1%
R
L
= 100Ω
No load
Conditions
Value
0
1
21
-3.5 to 4.5
+3.6
-3.6
108
108
147
180
42
22.6
Unit
mV
V/mV
mA
V
V
V
mA
mA
MHz
V/µs
Degrees
ns
5/6
DINR 15 18 MDTH 400E-12
VIP 4 18 0.500000E+00
FCP 4 5 VOFP 2.200000E+01
FCN 5 4 VOFN 2.200000E+01
FIBP 2 5 VOFP 1.000000E-02
FIBN 5 1 VOFN 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.370000E+02
FIN 5 19 VOFN 4.370000E+02
RG1 19 5 1.124121E+03
RG2 19 4 1.124121E+03
CC 19 29 2.000000E-09
HZTP 30 29 VOFP 5.574976E+01
HZTN 5 30 VOFN 5.574976E+01
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 5.000000E+02
VIPM 28 4 5.000000E+01
HONM 21 27 VOUT 5.000000E+02
VINM 5 27 5.000000E+01
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 2.180423E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.511965E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.511965E+00
.ENDS
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