Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
参数名称 | 属性值 |
厂商名称 | Fairchild |
零件包装代码 | SOT |
包装说明 | SMALL OUTLINE, R-PDSO-G8 |
针数 | 8 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | 20 V |
最大漏极电流 (ID) | 4 A |
最大漏源导通电阻 | 0.065 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G8 |
元件数量 | 2 |
端子数量 | 8 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 20 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
FDS8934AS62Z | FDS8934AL99Z | FDS8934AD84Z | FDS8934AL86Z | |
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描述 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 |
厂商名称 | Fairchild | Fairchild | Fairchild | Fairchild |
零件包装代码 | SOT | SOT | SOT | SOT |
包装说明 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
针数 | 8 | 8 | 8 | 8 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压 | 20 V | 20 V | 20 V | 20 V |
最大漏极电流 (ID) | 4 A | 4 A | 4 A | 4 A |
最大漏源导通电阻 | 0.065 Ω | 0.055 Ω | 0.065 Ω | 0.065 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
元件数量 | 2 | 2 | 2 | 2 |
端子数量 | 8 | 8 | 8 | 8 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 20 A | 20 A | 20 A | 20 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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