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IXGH12N100S: 产品描述Insulated Gate Bipolar Transistor, 24A I(C), 1000V V(BR)CES, N-Channel, TO-247, 2 PIN; 产品类别分立半导体晶体管; 文件大小163KB，共2页; 制造商IXYS; 标准

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IXGH12N100S概述

Insulated Gate Bipolar Transistor, 24A I(C), 1000V V(BR)CES, N-Channel, TO-247, 2 PIN

	IXGH12N100S	IXGH12N100AS
描述	Insulated Gate Bipolar Transistor, 24A I(C), 1000V V(BR)CES, N-Channel, TO-247, 2 PIN	Insulated Gate Bipolar Transistor, 24A I(C), 1000V V(BR)CES, N-Channel, TO-247, 2 PIN
零件包装代码	TO-247	TO-247
包装说明	TO-247, 2 PIN	FLANGE MOUNT, R-PSFM-G2
针数	3	3
Reach Compliance Code	compliant	unknow
外壳连接	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	24 A	24 A
集电极-发射极最大电压	1000 V	1000 V
配置	SINGLE	SINGLE
门极发射器阈值电压最大值	5.5 V	5.5 V
门极-发射极最大电压	20 V	20 V
JESD-30 代码	R-PSFM-G2	R-PSFM-G2
元件数量	1	1
端子数量	2	2
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	100 W	100 W
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	SINGLE	SINGLE
晶体管应用	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON
标称断开时间 (toff)	900 ns	900 ns
标称接通时间 (ton)	100 ns	100 ns

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