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MT29F256G08CKAAAH2Z:A

产品描述Flash, 32GX8, PBGA100, 12 X 18 MM, 1.20 MM HEIGHT, LEAD FREE, TBGA-100
产品类别存储    存储   
文件大小3MB,共164页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT29F256G08CKAAAH2Z:A概述

Flash, 32GX8, PBGA100, 12 X 18 MM, 1.20 MM HEIGHT, LEAD FREE, TBGA-100

MT29F256G08CKAAAH2Z:A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码BGA
包装说明12 X 18 MM, 1.20 MM HEIGHT, LEAD FREE, TBGA-100
针数100
Reach Compliance Codecompli
ECCN代码3A991.B.1.A
JESD-30 代码R-PBGA-B100
JESD-609代码e1
长度18 mm
内存密度274877906944 bi
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量100
字数34359738368 words
字数代码32000000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32GX8
封装主体材料PLASTIC/EPOXY
封装代码TBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
编程电压2.7 V
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
类型MLC NAND TYPE
宽度12 mm
Base Number Matches1

文档预览

下载PDF文档
Micron Confidential and Proprietary
64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous
NAND
Features
NAND Flash Memory
MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB,
MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA,
MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,
MT29F512G08CUCAB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant
1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
2
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
t
RC/
t
WC: 20ns (MIN)
– Up to asynchronous timing mode 5
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 75µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3.8ms (TYP)
• Operating Voltage Range
– V
CC
: 2.7–3.6V
– V
CCQ
: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 111).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47G compliant; see qualifi-
cation report
– Endurance: 3000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
Notes:
1. The ONFI 2.2 specification is available at
www.onfi.org.
2. BGA devices up to Synchronous timing
mode 5. TSOP devices up to Synchronous
timing mode 4.
PDF: 09005aef83d2277a
L74A_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

 
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