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MT29F256G08CKAAAWP:A

产品描述Flash, 32GX8, PDSO48, LEAD FREE, PLASTIC, TSOP1-48
产品类别存储    存储   
文件大小3MB,共164页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
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MT29F256G08CKAAAWP:A概述

Flash, 32GX8, PDSO48, LEAD FREE, PLASTIC, TSOP1-48

MT29F256G08CKAAAWP:A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码TSOP1
包装说明LEAD FREE, PLASTIC, TSOP1-48
针数48
Reach Compliance Codecompli
ECCN代码3A991.B.1.A
JESD-30 代码R-PDSO-G48
JESD-609代码e3
长度18.4 mm
内存密度274877906944 bi
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量48
字数34359738368 words
字数代码32000000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32GX8
封装主体材料PLASTIC/EPOXY
封装代码TSOP1
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
编程电压2.7 V
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
类型MLC NAND TYPE
宽度12 mm
Base Number Matches1

文档预览

下载PDF文档
Micron Confidential and Proprietary
64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous
NAND
Features
NAND Flash Memory
MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB,
MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA,
MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,
MT29F512G08CUCAB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant
1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
2
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
t
RC/
t
WC: 20ns (MIN)
– Up to asynchronous timing mode 5
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 75µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3.8ms (TYP)
• Operating Voltage Range
– V
CC
: 2.7–3.6V
– V
CCQ
: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 111).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47G compliant; see qualifi-
cation report
– Endurance: 3000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
Notes:
1. The ONFI 2.2 specification is available at
www.onfi.org.
2. BGA devices up to Synchronous timing
mode 5. TSOP devices up to Synchronous
timing mode 4.
PDF: 09005aef83d2277a
L74A_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

 
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