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2N1596

产品描述Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 100V V(DRM), 1 Element, TO-39, TO-39, 3 PIN
产品类别模拟混合信号IC    触发装置   
文件大小276KB,共4页
制造商Advanced Semiconductor, Inc.
相似器件已查找到18个与2N1596功能相似器件
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2N1596概述

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 100V V(DRM), 1 Element, TO-39, TO-39, 3 PIN

2N1596规格参数

参数名称属性值
零件包装代码TO-39
包装说明CYLINDRICAL, O-MBCY-W3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
标称电路换相断开时间10 µs
配置SINGLE
最大直流栅极触发电流10 mA
最大直流栅极触发电压3 V
JEDEC-95代码TO-39
JESD-30 代码O-MBCY-W3
最大漏电流6 mA
通态非重复峰值电流15 A
元件数量1
端子数量3
最大通态电流1600 A
最高工作温度125 °C
最低工作温度-65 °C
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
认证状态Not Qualified
最大均方根通态电流1.6 A
断态重复峰值电压100 V
表面贴装NO
端子形式WIRE
端子位置BOTTOM
触发设备类型SCR
Base Number Matches1

与2N1596功能相似器件

器件名 厂商 描述
2N1596 SSDI Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 100V V(DRM), 1 Element, TO-205AD, TO-205AD, 3 PIN
2N1596LEADFREE Central Semiconductor Silicon Controlled Rectifier, 1.6A I(T)RMS, 100V V(RRM), 1 Element, TO-39
2N3027 Digitron Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18
2N2328 SSDI Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN
2N6396 Advanced Semiconductor, Inc. Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM)
2N6402 Toshiba(东芝) SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220
C126F Semitronics Corp Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
BT151X-650R,127 WeEn Semiconductors Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3
2N1772A SSDI Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N1776A SSDI Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N879 Digitron SILICON CONTROLLED RECTIFIER
2N1880 Digitron Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5
C15F Semitronics Corp Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64
MCR718 Central Semiconductor SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS
2N2327 New Jersey Semiconductor Thyristor SCR 250V 15A 3-Pin TO-39
2N1802 Vishay(威世) Silicon Controlled Rectifier, 110 A, 800 V, SCR, TO-208AD, TO-83, 2 PIN
CS29-08IO1C IXYS Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN
S2025L Littelfuse SCRs 25A 200V

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