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KM416C4100C-6000

产品描述Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
产品类别存储    存储   
文件大小902KB,共35页
制造商SAMSUNG(三星)
官网地址http://www.samsung.com/Products/Semiconductor/
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KM416C4100C-6000概述

Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

KM416C4100C-6000规格参数

参数名称属性值
厂商名称SAMSUNG(三星)
包装说明TSOP2,
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FAST PAGE
最长访问时间60 ns
其他特性CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 代码R-PDSO-G50
长度20.95 mm
内存密度67108864 bit
内存集成电路类型FAST PAGE DRAM
内存宽度16
功能数量1
端口数量1
端子数量50
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TSOP2
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL
宽度10.16 mm

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KM416C4000C, KM416C4100C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family
have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri-
cated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- KM416C4000C(5.0V, 8K Ref.)
- KM416C4100C(5.0V, 4K Ref.)
Active Power Dissipation
Unit : mW
Speed
-5
-6
8K
495
440
4K
660
605
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply
Refresh Cycles
Part
NO.
KM416C4000C*
KM416C4100C
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
RAS
UCAS
LCAS
W
Control
Clocks
Vcc
Vss
Lower
Data in
Buffer
Sense Amps & I/O
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
FUNCTIONAL BLOCK DIAGRAM
VBB Generator
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Refresh Timer
Refresh Control
Row Decoder
DQ0
to
DQ7
Performance Range
Speed
-5
-6
Refresh Counter
Memory Array
4,194,304 x 16
Cells
OE
DQ8
to
DQ15
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.

KM416C4100C-6000相似产品对比

KM416C4100C-6000 KM416C4000C-5 KM416C4000C-5000 KM416C4100C-5 KM416C4100C-5000 KM416C4000C-6 KM416C4000C-6000 KM416C4100CS-5 KM416C4100C-6
描述 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO54 Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP-50
包装说明 TSOP2, SOP, TSOP2, SOP, TSOP2, SOP, TSOP2, TSOP, TSOP54,.46,32 SOP,
Reach Compliance Code compliant unknown compliant unknown compliant unknown compliant unknown unknown
最长访问时间 60 ns 50 ns 50 ns 50 ns 50 ns 60 ns 60 ns 50 ns 60 ns
JESD-30 代码 R-PDSO-G50 R-PDSO-G50 R-PDSO-G50 R-PDSO-G50 R-PDSO-G50 R-PDSO-G50 R-PDSO-G50 R-PDSO-G54 R-PDSO-G50
内存密度 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 16 16 16 16 16 16 16 16 16
端子数量 50 50 50 50 50 50 50 54 50
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000 4000000 4000000 4000000
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 SOP TSOP2 SOP TSOP2 SOP TSOP2 TSOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
厂商名称 SAMSUNG(三星) - - SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE - FAST PAGE
功能数量 1 1 1 1 1 1 1 - 1
端口数量 1 1 1 1 1 1 1 - 1
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
自我刷新 YES - YES - YES - YES NO -
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - 4.5 V
端子节距 0.8 mm - 0.8 mm - 0.8 mm - 0.8 mm 0.8 mm -
认证状态 - Not Qualified - Not Qualified - Not Qualified - Not Qualified Not Qualified

 
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