Single-Ended Multiplexer, 1 Func, 8 Channel, CMOS, CDSO16, 0.300 X 0.400 INCH, 0.120 INCH HEIGHT, HERMETIC SEALED, CERAMIC, SOIC-16
| 参数名称 | 属性值 |
| 厂商名称 | Cobham Semiconductor Solutions |
| 零件包装代码 | SOIC |
| 包装说明 | HSOP, |
| 针数 | 16 |
| Reach Compliance Code | unknown |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER |
| JESD-30 代码 | R-CDSO-G16 |
| 信道数量 | 8 |
| 功能数量 | 1 |
| 端子数量 | 16 |
| 最大通态电阻 (Ron) | 750 Ω |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | HSOP |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, HEAT SINK/SLUG |
| 筛选级别 | MIL-PRF-38534 Class K |
| 座面最大高度 | 3.3528 mm |
| 最大供电电压 (Vsup) | 5 V |
| 最小供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 最长断开时间 | 200 ns |
| 最长接通时间 | 200 ns |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 总剂量 | 1M Rad(Si) V |
| RHD5928-901-2S | RHD5928-901-1S | RHD5928-201-1S | 5962-1024304KXC | |
|---|---|---|---|---|
| 描述 | Single-Ended Multiplexer, 1 Func, 8 Channel, CMOS, CDSO16, 0.300 X 0.400 INCH, 0.120 INCH HEIGHT, HERMETIC SEALED, CERAMIC, SOIC-16 | Single-Ended Multiplexer, 1 Func, 8 Channel, CMOS, CDSO16, 0.300 X 0.400 INCH, 0.120 INCH HEIGHT, HERMETIC SEALED, CERAMIC, SOIC-16 | Single-Ended Multiplexer, 1 Func, 8 Channel, CMOS, CDSO16, 0.300 X 0.400 INCH, 0.120 INCH HEIGHT, HERMETIC SEALED, CERAMIC, SOIC-16 | Single-Ended Multiplexer, |
| 包装说明 | HSOP, | HSOP, | HSOP, | , |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER |
| 厂商名称 | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | - |
| 零件包装代码 | SOIC | SOIC | SOIC | - |
| 针数 | 16 | 16 | 16 | - |
| JESD-30 代码 | R-CDSO-G16 | R-CDSO-G16 | R-CDSO-G16 | - |
| 信道数量 | 8 | 8 | 8 | - |
| 功能数量 | 1 | 1 | 1 | - |
| 端子数量 | 16 | 16 | 16 | - |
| 最大通态电阻 (Ron) | 750 Ω | 750 Ω | 750 Ω | - |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | - |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | - |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - |
| 封装代码 | HSOP | HSOP | HSOP | - |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| 封装形式 | SMALL OUTLINE, HEAT SINK/SLUG | SMALL OUTLINE, HEAT SINK/SLUG | SMALL OUTLINE, HEAT SINK/SLUG | - |
| 筛选级别 | MIL-PRF-38534 Class K | MIL-PRF-38534 Class K | MIL-PRF-38534 Class K | - |
| 座面最大高度 | 3.3528 mm | 3.3528 mm | 3.3528 mm | - |
| 最大供电电压 (Vsup) | 5 V | 5 V | 5 V | - |
| 最小供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | - |
| 表面贴装 | YES | YES | YES | - |
| 最长断开时间 | 200 ns | 200 ns | 200 ns | - |
| 最长接通时间 | 200 ns | 200 ns | 200 ns | - |
| 技术 | CMOS | CMOS | CMOS | - |
| 温度等级 | MILITARY | MILITARY | MILITARY | - |
| 端子形式 | GULL WING | GULL WING | GULL WING | - |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | - |
| 端子位置 | DUAL | DUAL | DUAL | - |
| 总剂量 | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | - |
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