HY62SF16200A Series
128Kx16bit full CMOS SRAM
DESCRIPTION
The HY62SF16200A is a high speed, super low
power and 2Mbit full CMOS SRAM organized as
131,072 words by 16bits. The HY62SF16200A
uses high performance full CMOS process
technology and is designed for high speed and
low power circuit technology. It is particularly well-
suited for the high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 1.2V.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup(LL/SL-part)
- 1.2V(min) data retention
•
Standard pin configuration
- 48- FBGA
Product
Voltage
Speed
No.
(V)
(ns)
HY62SF16200A
1.7V~2.3V 100/120/150
HY62SF16200A-I 1.7V~2.3V 100/120/150
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
10
2
10
2
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
/LB
/OE A0
A1
A4
A6
A7
A2
NC
A1,A2
A4,A6~A7
A9
A12
A15~A16
A8
A10
A13
A14
A0
A3
A5
A11
/CS
/OE
/LB
/UB
/WE
ADD INPUT
BUFFER
BLOCK DIAGRAM
ROW
DECODER
SENSE
AMP
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
IO4 Vcc
I/O1
COLUMN
DECODER
I/O8
DATA I/O
BUFFER
ADD INPUT
BUFFER
PRE DECODER
A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
MEMORY ARRAY
128K x 16
WRITE DRIVER
I/O9
BLOCK
DECODER
ADD INPUT
BUFFER
I/O16
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Funtion
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power(1.7V~2.3V)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jun. 2000
Hyundai Semiconductor
HY62SF16200A Series
ORDERING INFORMATION
Part No.
Speed
HY62SF16200ALLF
100/120/150
HY62SF16200ASLF
100/120/150
HY62SF16200ALLF-I
100/120/150
HY62SF16200ASLF-I
100/120/150
Note 1. Blank : Commercial, I : Industrial
Power
LL-part
SL-part
LL-part
SL-part
Temp.
Package
FBGA
FBGA
FBGA
FBGA
I
I
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
T
STG
P
D
T
SOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.2 to 3.6
-0.2 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260
•
10
Unit
V
V
°C
°C
°C
W
°C•sec
Remark
HY62SF16200A
HY62SF16200A-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS
H
L
L
L
/WE
X
H
X
H
/OE
X
H
X
L
/LB
X
X
H
L
H
L
L
H
L
/UB
X
X
H
H
L
L
H
L
L
Mode
Deselected
Output Disabled
Output Disabled
Read
I/O
I/O1~I/O8 I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
High-Z
D
OUT
D
OUT
D
OUT
D
IN
High-Z
High-Z
D
IN
D
IN
D
IN
Power
Standby
Active
Active
Active
L
L
X
Write
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Rev.04 /Jun. 2000
2
HY62SF16200A Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ.
Vcc
Supply Voltage
1.7
1.8
Vss
Ground
0
0
V
IH
Input High Voltage
1.6
V
IL
Input Low Voltage
-0.3
(1)
-
Note : 1. VIL = -1.5V for pulse width less than 30ns
2. Typical values is not 100% tested
Max.
2.3
0
Vcc+0.3
0.4
Unit
V
V
V
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, T
A
= 0°C to 70°C/ -40°C to 85°C(I)
Sym
Parameter
Test Condition
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL,
/
UB
=
V
IH
and /LB = V
IH
Icc
Operating Power Supply Current /CS = V
IL
, V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating
Cycle Time=Min,100% duty,
Current
I
I/O =
0mA, /CS = V
IL,
V
IN
= V
IH
or V
IL
Cycle time = 1us, 100% duty,
I
I/O =
0mA, /CS < 0.2V, V
IN
<0.2V
I
SB
TTL Standby
Current
/CS = V
IH
or /CS = V
IL,
(TTL Input)
/UB, /LB = V
IH
I
SB1
Standby Current
/CS > Vcc - 0.2V or /CS < Vss SL
(CMOS Input)
+ 0.2V, /UB, /LB > Vcc - 0.2V
LL
V
OL
Output Low Voltage
I
OL
= 0.1mA
V
OH
Output High Voltage
I
OH =
-0.1mA
Note : 1.Typical values are at Vcc = 1.8V, T
A
= 25°C
2. Typical values are sampled and not 100% tested
Min
-1
-1
Typ
-
-
Max
1
1
Unit
uA
uA
-
-
-
-
3
25
3
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
1.6
-
-
0.5
-
-
0.15
1
3
0.2
-
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance(Add, /CS, /WE, /OE)
C
OUT
Output Capacitance(I/O)
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.04 /Jun. 2000
3
HY62SF16200A Series
AC CHARACTERISTICS
Vcc = 1.7V~2.3V, T
A
= 0°C to 70°C/ -40°C to 85°C(I), unless otherwise specified
-85
-10
Symbol
Parameter
#
Min.
Max. Min.
Max.
READ CYCLE
1
TRC
Read Cycle Time
85
-
100
-
2
TAA
Address Access Time
-
85
-
100
3
TACS
Chip Select Access Time
-
85
-
100
4
TOE
Output Enable to Output Valid
-
40
-
50
5
TBA
/LB, /UB Access Time
-
85
-
100
6
TCLZ
Chip Select to Output in Low Z
10
-
20
-
7
TOLZ
Output Enable to Output in Low Z
5
-
5
-
8
TBLZ
/LB, /UB Enable to Output in Low Z
5
-
5
-
9
TCHZ
Chip Deselection to Output in High Z
0
30
0
30
10 TOHZ
Out Disable to Output in High Z
0
30
0
30
11 TBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
12 TOH
Output Hold from Address Change
10
-
15
-
WRITE CYCLE
13 TWC
Write Cycle Time
85
-
100
-
14 TCW
Chip Selection to End of Write
70
-
80
-
15 TAW
Address Valid to End of Write
70
-
80
-
16 TBW
/LB, /UB Valid to End of Write
70
-
80
-
17 TAS
Address Set-up Time
0
-
0
-
18 TWP
Write Pulse Width
55
-
75
-
19 TWR
Write Recovery Time
0
-
0
-
20 TWHZ
Write to Output in High Z
0
30
0
35
21 TDW
Data to Write Time Overlap
35
-
45
-
22 TDH
Data Hold from Write Time
0
-
0
-
23 TOW
Output Active from End of Write
5
-
10
-
-12
Min
Max.
120
-
-
-
-
20
10
10
0
0
0
15
120
100
100
100
0
85
0
0
50
0
10
-
120
120
60
120
-
-
-
40
40
40
-
-
-
-
-
-
-
-
40
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C/ -40°C to 85°C(I), unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.4V to 1.6V
Input Rise and Fall Time
5ns
Input and Output Timing Reference
0.8V
Level
Output Load
CL = 30pF + 1TTL Load
AC TEST LOADS
V
TM
= 1.7V
4091 Ohm
D
OUT
CL(1)
3273 Ohm
Note
1. Including jig and scope capacitance
Rev.04 /Jun. 2000
4
HY62SF16200A Series
TIMING DIAGRAM
READ CYCLE 1(Note 1)
tRC
ADDR
tAA
OE
tOE
tOLZ(5)
CS
tACS
tBA
UB,LB
tBLZ(5)
tCLZ
Data
Out
High-Z
tBHZ(5)
Data Valid
tOHZ(5)
tCHZ(5)
tOH
READ CYCLE 2(Note 1,2,4)
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
READ CYCLE 3(Note 1,3,4)
CS
tACS
tCLZ(5)
Data
Out
Data Valid
tCHZ(5)
Notes:
1. /WE is high for the Read Cycle.
2. Device is continuously selected. /CS = V
IL
3. Address valid is prior to or coincident with /CS transition low
4. /OE = V
IL
5. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
Rev.04 /Jun. 2000
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
