MBR730–MBR760
Vishay Lite–On Power Semiconductor
7.5A Schottky Barrier Rectifiers
Features
D
Schottky barrier chip
D
Guard ring die construction for transient
D
D
D
D
D
protection
Low power loss, high efficiency
High surge capability
High current capability and low forward voltage
drop
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection
application
Plastic material has UL flammability
classification 94V–0
94 9537
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
DC Blocking lt
=DC Bl ki voltage
Test
Conditions
Type
MBR730
MBR735
MBR740
MBR745
MBR750
MBR760
T
C
=125
°
C
Symbol
V
RRM
=V
RWM
V
=V
R
Value
30
35
40
45
50
60
150
7.5
–65...+150
Unit
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Test Conditions
I
F
=7.5A, T
C
25
°
C
I
F
=7.5A, T
C
125
°
C
I
F
=7.5A, T
C
25
°
C
I
F
=7.5A, T
C
125
°
C
T
C
=25
°
C
T
C
=125
°
C
T
C
=25
°
C
T
C
=125
°
C
V
R
=4V, f=1MHz
T
L
=const.
Type
MBR730
–MBR745
MBR750
–MBR760
MBR730
–MBR745
MBR750
–MBR760
Symbol Min
V
F
V
F
V
F
V
F
I
R
I
R
I
R
I
R
C
D
R
thJA
dV/dt
Typ
Max Unit
0.55
V
0.70
V
0.70
V
0.75
V
1.0 mA
15
mA
1.0 mA
50
mA
pF
K/W
V/
m
s
Reverse current
Diode capacitance
Thermal resistance
junction to ambient
Voltage rate of change
( Rated V
R
)
Rev. A2, 24-Jun-98
400
3.5
1000
1 (4)
MBR730–MBR760
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FAV
– Average Forward Current ( A )
10
C
D
– Diode Capacitance ( pF )
4000
8
6
1000
4
2
0
0
50
100
150
100
0.1
15316
1.0
10
100
15313
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
50
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
10
I
R
– Reverse Current ( mA )
I
F
– Forward Current ( A )
MBR730 – MBR745
T
j
= 100°C
10
1.0
MBR750 – MBR760
0.1
T = 75°C
j
1.0
T
j
= 25°C
Pulse Width = 300
µs
2% Duty Cycle
0.01
T
j
= 25°C
Resistive or
Inductive Load
0.1
0.2
15314
0.4
0.6
0.8
1.0
15317
0.001
0
V
F
– Forward Voltage ( V )
40
60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
20
Figure 2. Typ. Forward Current vs. Forward Voltage
I
FSM
– Peak Forward Surge Current ( A )
175
150
125
100
75
50
25
1
15315
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
8.3 ms Single Half–Sine–Wave
JEDEC method
10
Number of Cycles at 60 Hz
100
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
MBR730–MBR760
Vishay Lite–On Power Semiconductor
Dimensions in mm
14469
Case: Molded Plastic
Polarity: See Diagram
Approx. Weight: 2.3 grams
Mounting Position: Any
Marking: Tupe Number
Rev. A2, 24-Jun-98
3 (4)
MBR730–MBR760
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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