See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
April, 2005 − Rev. 2
Publication Order Number:
NSL12AW/D
NSL12AW
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage, (I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage, (I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current, (V
CB
= −12 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current, (V
CES
= −12 Vdc, I
E
= 0)
Emitter Cutoff Current, (V
CES
= −5.0 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= −0.5 A, V
CE
= −1.5 V)
(I
C
= −0.8 A, V
CE
= −1.5 V)
(I
C
= −1.0 A, V
CE
= −1.5 V)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= −0.5 A, I
B
= −10 mA)
(I
C
= −0.8 A, I
B
= −16 mA)
(I
C
= −1.0 A, I
B
= −20 mA)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= −1.0 A, I
B
= −20 mA)
Base −Emitter Turn−on Voltage (Note 3)
(I
C
= −1.0 A, V
CE
= −1.5 V)
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
Output Capacitance
(V
CB
= −1.5 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width < 300
msec,
Duty Cycle < 2%
h
FE
100
100
100
V
CE(sat)
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
−
C
obo
−
50
65
100
−
pF
−0.81
−0.95
MHz
−0.84
−0.95
V
−0.10
−0.14
−0.17
−0.160
−0.235
−0.290
V
180
165
160
−
300
−
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
−12
−12
−5.0
−
−
−
−15
−25
−7.0
−0.02
−0.03
−0.03
−
−
−
−0.1
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
NSL12AWT1
NSL12AWT1G
Package
SOT−363
SOT−363
(Pb−Free)
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
0.5
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
0.5
0.4
2A
0.3
0.4
0.3
0.2
1A
800 mA
I
C
= 100 mA
500 mA
100
0.2
I
C
/I
B
= 100
0.1
0
1
0.1
0
0.001
I
C
/I
B
= 10
0.01
0.1
I
C
, COLLECTOR CURRENT (AMPS)
1
10
I
B
, BASE CURRENT (mA)
Figure 1. Collector Emitter Voltage vs Base Current
Figure 2. Collector Emitter Voltage vs Collector Current
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2
NSL12AW
400
125°C
h
FE
, DC CURRENT GAIN
300
V
BE
, BASE EMITTER VOLTAGE (V)
V
CE
= 1.5 V
1.0
0.9
0.8
0.7
25°C
0.6
0.5
0.4
0.3
0.001
0.01
0.1
1
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (AMPS)
125°C
V
CE
= 1.5 V
1
T
A
= −55°C
200
25°C
100
T
A
= −55°C
0
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(sat)
, BASE EMITTER SATURATION VOLTAGE (V)
Figure 3. DC Current Gain versus Collector
Current
Figure 4. Base Emitter Voltage versus
Collector Current
1.0
I
C
, COLLECTOR CURRENT (A)
10
0.9
I
C
/I
B
= 10
dc
1
1s
100 ms
10 ms
1 ms
0.8
I
C
/I
B
= 100
0.7
0.1
SINGLE PULSE T
A
= 25°C
0.6
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 5. Base Emitter Saturation Voltage
versus Base Current
Figure 6. Safe Operating Area
r(t), MINIMUM PAD NORMALIZED
TRANSIENT THERMAL RESISTANCE
1
D = 0.50
D = 0.20
0.1
D = 0.10
D = 0.05
D = 0.02
0.01
D = 0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 7. Normalized Thermal Response
http://onsemi.com
3
NSL12AW
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE V
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
6
5
4
H
E
1
2
3
−E−
b
6 PL
0.2 (0.008)
M
E
M
DIM
A
A1
A3
b
C
D
E
e
L
H
E
A3
C
A
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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