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NSL12AWT1

产品描述2000mA, 12V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN
产品类别分立半导体    晶体管   
文件大小731KB,共5页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
标准  
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NSL12AWT1概述

2000mA, 12V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN

NSL12AWT1规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证不符合
厂商名称Rochester Electronics
零件包装代码SC-88
包装说明SC-88, 6 PIN
针数6
Reach Compliance Codeunknown
最大集电极电流 (IC)2 A
集电极-发射极最大电压12 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PDSO-G6
JESD-609代码e0
湿度敏感等级NOT SPECIFIED
元件数量1
端子数量6
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
极性/信道类型PNP
认证状态COMMERCIAL
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间30
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

NSL12AWT1文档预览

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NSL12AW
High Current Surface Mount
PNP Silicon Low V
CE(sat)
Transistor for Battery
Operated Applications
http://onsemi.com
Features
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low V
CE(s)
(170 mV Typical @ 1 A)
Small Size
Pb−Free Package is Available
12 VOLTS
3.0 AMPS
PNP TRANSISTOR
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
Benefits
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current
− Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−12
−12
−5.0
−2.0
−3.0
Unit
Vdc
Vdc
Vdc
Adc
HBM Class 3
MM Class C
1
CASE 419B
SC−88/SOT−363
STYLE 20
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead 6
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
1. FR−4, Minimum Pad, 1 oz Coverage
2. FR−4, 1″ Pad, 1 oz Coverage
©
Semiconductor Components Industries, LLC, 2005
MARKING DIAGRAM
Symbol
P
D
(Note 1)
Max
450
3.6
Unit
mW
mW/°C
°C/W
1
P
D
(Note 2)
650
5.2
mW
mW/°C
°C/W
°C/W
M
G
= Date Code
= Pb−Free Package
6
11
M
G
R
qJA
(Note 1)
275
R
qJA
(Note 2)
R
qJL
P
D
Single
T
J
, T
stg
192
105
1.4
−55 to +150
ORDERING INFORMATION
W
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
April, 2005 − Rev. 2
Publication Order Number:
NSL12AW/D
NSL12AW
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage, (I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage, (I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current, (V
CB
= −12 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current, (V
CES
= −12 Vdc, I
E
= 0)
Emitter Cutoff Current, (V
CES
= −5.0 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= −0.5 A, V
CE
= −1.5 V)
(I
C
= −0.8 A, V
CE
= −1.5 V)
(I
C
= −1.0 A, V
CE
= −1.5 V)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= −0.5 A, I
B
= −10 mA)
(I
C
= −0.8 A, I
B
= −16 mA)
(I
C
= −1.0 A, I
B
= −20 mA)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= −1.0 A, I
B
= −20 mA)
Base −Emitter Turn−on Voltage (Note 3)
(I
C
= −1.0 A, V
CE
= −1.5 V)
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
Output Capacitance
(V
CB
= −1.5 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width < 300
msec,
Duty Cycle < 2%
h
FE
100
100
100
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
50
65
100
pF
−0.81
−0.95
MHz
−0.84
−0.95
V
−0.10
−0.14
−0.17
−0.160
−0.235
−0.290
V
180
165
160
300
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
−12
−12
−5.0
−15
−25
−7.0
−0.02
−0.03
−0.03
−0.1
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
NSL12AWT1
NSL12AWT1G
Package
SOT−363
SOT−363
(Pb−Free)
Shipping
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
0.5
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
0.5
0.4
2A
0.3
0.4
0.3
0.2
1A
800 mA
I
C
= 100 mA
500 mA
100
0.2
I
C
/I
B
= 100
0.1
0
1
0.1
0
0.001
I
C
/I
B
= 10
0.01
0.1
I
C
, COLLECTOR CURRENT (AMPS)
1
10
I
B
, BASE CURRENT (mA)
Figure 1. Collector Emitter Voltage vs Base Current
Figure 2. Collector Emitter Voltage vs Collector Current
http://onsemi.com
2
NSL12AW
400
125°C
h
FE
, DC CURRENT GAIN
300
V
BE
, BASE EMITTER VOLTAGE (V)
V
CE
= 1.5 V
1.0
0.9
0.8
0.7
25°C
0.6
0.5
0.4
0.3
0.001
0.01
0.1
1
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (AMPS)
125°C
V
CE
= 1.5 V
1
T
A
= −55°C
200
25°C
100
T
A
= −55°C
0
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(sat)
, BASE EMITTER SATURATION VOLTAGE (V)
Figure 3. DC Current Gain versus Collector
Current
Figure 4. Base Emitter Voltage versus
Collector Current
1.0
I
C
, COLLECTOR CURRENT (A)
10
0.9
I
C
/I
B
= 10
dc
1
1s
100 ms
10 ms
1 ms
0.8
I
C
/I
B
= 100
0.7
0.1
SINGLE PULSE T
A
= 25°C
0.6
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 5. Base Emitter Saturation Voltage
versus Base Current
Figure 6. Safe Operating Area
r(t), MINIMUM PAD NORMALIZED
TRANSIENT THERMAL RESISTANCE
1
D = 0.50
D = 0.20
0.1
D = 0.10
D = 0.05
D = 0.02
0.01
D = 0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1
10
100
1000
Figure 7. Normalized Thermal Response
http://onsemi.com
3
NSL12AW
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE V
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
6
5
4
H
E
1
2
3
−E−
b
6 PL
0.2 (0.008)
M
E
M
DIM
A
A1
A3
b
C
D
E
e
L
H
E
A3
C
A
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone:
480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax:
480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Japan:
ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone:
81−3−5773−3850
ON Semiconductor Website:
http://onsemi.com
Order Literature:
http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
http://onsemi.com
4
NSL12AW/D

 
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