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NSS40300MDR2G,
NSV40300MDR2G
Dual Matched 40 V, 6.0 A,
Low V
CE(sat)
PNP Transistor
These transistors are part of the ON Semiconductor e
2
PowerEdge
family of Low V
CE(sat)
transistors. They are assembled to create a pair
of devices highly matched in all parameters, including ultra low
saturation voltage V
CE(sat)
, high current gain and Base/Emitter turn on
voltage.
Typical applications are current mirrors, differential amplifiers,
DC−DC converters and power management in portable and battery
powered products such as cellular and cordless phones, PDAs,
computers, printers, digital cameras and MP3 players. Other
applications are low voltage motor controls in mass storage products
such as disc drives and tape drives. In the automotive industry they can
be used in air bag deployment and in the instrument cluster. The high
current gain allows e
2
PowerEdge devices to be driven directly from
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
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40 VOLTS
6.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
80 mW
SOIC−8
CASE 751
STYLE 29
COLLECTOR
7,8
1
BASE
2
EMITTER
3
BASE
4
EMITTER
COLLECTOR
5,6
Current Gain Matching to 10%
Base Emitter Voltage Matched to 2 mV
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Devices*
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−40
−40
−7.0
−3.0
−6.0
Unit
Vdc
Vdc
Vdc
A
A
MARKING DIAGRAM
8
P40300
AYWWG
G
1
P40300
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
HBM Class 3B
MM Class C
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NSS40300MDR2G
NSV40300MDR2G
Package
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
Shipping
†
2,500 /
Tape & Reel
2,500 /
Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
November, 2011
−
Rev. 2
1
Publication Order Number:
NSS40300MD/D
NSS40300MDR2G, NSV40300MDR2G
THERMAL CHARACTERISTICS
Characteristic
SINGLE HEATED
Total Device Dissipation (Note 1)
T
A
= 25C
Derate above 25C
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
A
= 25C
Derate above 25C
Thermal Resistance
Junction−to−Ambient (Note 2)
DUAL HEATED
(Note 3)
Total Device Dissipation (Note 1)
T
A
= 25C
Derate above 25C
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
A
= 25C
Derate above 25C
Thermal Resistance
Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
P
D
653
5.2
191
783
6.3
160
−55
to +150
mW
mW/C
C/W
P
D
576
4.6
217
676
5.4
185
mW
mW/C
C/W
Symbol
Max
Unit
R
qJA
P
D
mW
mW/C
C/W
R
qJA
R
qJA
P
D
mW
mW/C
C/W
C
R
qJA
T
J
, T
stg
1. FR−4 @ 10 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
3. Dual heated values assume total power is the sum of two equally powered devices.
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2
NSS40300MDR2G, NSV40300MDR2G
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−0.1
mAdc, I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−0.1
mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
=
−40
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−6.0
Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
=
−10
mA, V
CE
=
−2.0
V)
(I
C
=
−500
mA, V
CE
=
−2.0
V)
(I
C
=
−1.0
A, V
CE
=
−2.0
V)
(I
C
=
−2.0
A, V
CE
=
−2.0
V)
(I
C
=
−2.0
A, V
CE
=
−2.0
V) (Note 5)
Collector
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−0.1
A, I
B
=
−0.010
A)
(I
C
=
−1.0
A, I
B
=
−0.100
A)
(I
C
=
−1.0
A, I
B
=
−0.010
A)
(I
C
=
−2.0
A, I
B
=
−0.200
A)
Base
−Emitter
Saturation Voltage (Note 4)
(I
C
=
−1.0
A, I
B
=
−0.01
A)
Base
−Emitter
Turn−on Voltage (Note 4)
(I
C
=
−0.1
A, V
CE
=
−2.0
V)
(I
C
=
−0.1
A, V
CE
=
−2.0
V) (Note 6)
Cutoff Frequency
(I
C
=
−100
mA, V
CE
=
−5.0
V, f = 100 MHz)
Input Capacitance (V
EB
=
−0.5
V, f = 1.0 MHz)
Output Capacitance (V
CB
=
−3.0
V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
Rise (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
Storage (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
Fall (V
CC
=
−30
V, I
C
=
−750
mA, I
B1
=
−15
mA)
t
d
t
r
t
s
t
f
−
−
−
−
−
−
−
−
60
120
400
130
ns
ns
ns
ns
h
FE
250
220
180
150
0.9
−
−
−
−
−
−
−
100
−
−
380
340
300
230
0.99
−0.013
−0.075
−0.130
−0.135
−0.780
−0.660
0.3
−
250
50
−
−
−
−
−
−0.017
−0.095
−0.170
−0.170
−0.900
−0.750
2.0
−
300
65
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
−40
−40
−7.0
−
−
−
−
−
−
−
−
−
−
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
h
FE(1)/
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE(on)
V
BE(1)
−
V
BE(2)
f
T
Cibo
Cobo
V
V
mV
MHz
pF
pF
4. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
2%.
5. h
FE(1)
/h
FE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
FE
is used as numerator.
6. V
BE(1)
−
V
BE(2)
is the absolute difference of one transistor compared to the other transistor within the same package.
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3
NSS40300MDR2G, NSV40300MDR2G
TYPICAL CHARACTERISTICS
0.25
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.20
0.15
25C
0.10
150C
−55C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.30
I
C
/I
B
= 100
0.25
0.20
0.15
0.10
0.05
0
25C
−55C
150C
0.05
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
700
h
FE
, DC CURRENT GAIN
600
500
400
150C (5.0 V)
150C (2.0 V)
25C (5.0 V)
25C (2.0 V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
−55C
25C
300
−55C
(5.0 V)
200
−55C
(2.0 V)
100
0
0.001
0.01
0.1
1
10
150C
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V
BE(on)
, BASE−EMITTER TURN−ON
VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
150C
V
CE
=
−2.0
V
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
−55C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
100 mA
1A
2A
3A
25C
10
0.0001
0.001
0.01
0.1
I
C
, COLLECTOR CURRENT (A)
I
b
, BASE CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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