TSUS540.
Vishay Telefunken
GaAs Infrared Emitting Diodes in ø 5 mm (T–1¾)
Package
Description
TSUS540. series are infrared emitting diodes in
standard GaAs on GaAs technology, molded in a clear,
blue–grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and
phototransistors.
94 8390
Features
D
Low cost emitter
D
Low forward voltage
D
High radiant power and radiant intensity
D
Suitable for DC and high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Comfortable angle of half intensity
ϕ
=
±
22°
D
Peak wavelength
λ
p
= 950 nm
D
High reliability
D
Good spectral matching to Si photodetectors
Applications
D
Infrared remote control and free air transmission
systems with low forward voltage and comfortable
radiation angle requirements in combination with
PIN photodiodes or phototransistors.
Absolute Maximum Ratings
T
amb
= 25°C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
x
5sec, 2 mm from case
t
p
/T = 0.5, t
p
= 100
µs
t
p
= 100
µs
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
150
300
2.5
210
100
–55...+100
–55...+100
260
375
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81056
Rev. 3, 21–Jun–02
www.vishay.com
1 (6)
TSUS540.
Vishay Telefunken
Basic Characteristics
T
amb
= 25°C
Parameter
Forward Voltage
g
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
y
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100
µs
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
,
TSUS5400
TSUS5401
TSUS5402
I
F
= 1.5 A, t
p
= 100
µs
,
µ
TSUS5400
TSUS5401
TSUS5402
Radiant Power
I
F
= 100 mA, t
p
= 20 ms
,
TSUS5400
TSUS5401
TSUS5402
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
Fall Time
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 20 mA
Type
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
TK
φe
ϕ
λ
p
∆λ
TK
λp
t
r
t
r
t
f
t
f
7
10
15
60
85
120
30
14
17
20
140
160
190
13
14
15
–0.8
±22
950
50
0.2
800
400
800
400
Min.
Typ.
1.3
2.2
–1.3
100
Max.
1.7
3.4
Unit
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
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2 (6)
Document Number 81056
Rev. 3, 21–Jun–02
TSUS540.
Vishay Telefunken
Typical Characteristics
(T
amb
= 25_C, unless otherwise specified)
250
P
V
– Power Dissipation ( mW )
I
F
– Forward Current ( mA )
100
94 7996 e
10
4
10
3
10
2
10
1
10
0
10
–1
0
20
40
60
80
0
1
2
3
4
T
amb
– Ambient Temperature (
°C
)
V
F
– Forward Voltage ( V )
200
150
R
thJA
100
50
0
94 7957 e
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
V
Frel
– Relative Forward Voltage
I
F
– Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
I
F
= 10 mA
1.0
0.9
150
100
R
thJA
50
0
0
20
40
60
80
100
0.8
0.7
0
20
40
60
80
100
94 7988 e
T
amb
– Ambient Temperature (
°C
)
94 7990 e
T
amb
– Ambient Temperature (
°C
)
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
I
e
– Radiant Intensity ( mW/sr )
TSUS 5401
100
TSUS 5402
10
1
I
F
– Forward Current ( A )
I
FSM
= 2.5 A ( Single Pulse )
t
p
/T=0.01
10
0
0.05
0.1
0.5
1.0
10
–1
10
–2
10
TSUS 5400
1
10
–1
10
0
10
1
10
2
94 7997 e
10
0
94 7989 e
t
p
– Pulse Duration ( ms )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 3. bPulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81056
Rev. 3, 21–Jun–02
www.vishay.com
3 (6)
TSUS540.
Vishay Telefunken
1000
F
e
– Radiant Power ( mW )
TSUS 5402
100
TSUS 5400
10
F
e rel
– Relative Radiant Power
1.25
1.0
0.75
0.5
1
0.25
I
F
= 100 mA
0
900
0.1
10
0
94 7998 e
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
94 7994 e
950
l
– Wavelength ( nm )
1000
Figure 7. Radiant Power vs. Forward Current
1.6
Figure 9. Relative Radiant Power vs. Wavelength
0°
I
e rel
– Relative Radiant Intensity
10
°
20
°
30°
1.2
I
e rel
;
F
e rel
I
F
= 20 mA
0.8
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.4
0
–10 0 10
94 7993 e
50
100
140
94 7999 e
0.6
0.4
0.2
0
0.2
0.4
0.6
T
amb
– Ambient Temperature (
°C
)
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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4 (6)
Document Number 81056
Rev. 3, 21–Jun–02
TSUS540.
Vishay Telefunken
Dimensions in mm
96 12119
Document Number 81056
Rev. 3, 21–Jun–02
www.vishay.com
5 (6)
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