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SF64GX0G

产品描述Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, DO-201AD,
产品类别分立半导体    二极管   
文件大小422KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SF64GX0G概述

Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, DO-201AD,

SF64GX0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.975 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流6 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压200 V
最大反向电流5 µA
最大反向恢复时间0.035 µs
表面贴装NO
端子面层Tin (Sn)
端子形式WIRE
端子位置AXIAL

文档预览

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creat by art
SF61G - SF68G
6.0AMPS. Glass Passivated Super Fast Rectifiers
DO-201AD
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss
For use in low voltage, high frequency inverter,
free wheeling, and polarity protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260℃/10 seconds
Mounting position: Any
Weight: 1.2 grams
Ordering Information (example)
Part No.
SF61G
Package
DO-201AD
Packing
500 / AMMO box
INNER
TAPE
52mm
Packing code
A0
Packing code
(Green)
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurremt Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@6A
Maximum DC Reverse Current at Rated
DC Blocking Voltage
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
T
A
=25
T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
R
θJL
T
J
T
STG
SF
61G
50
35
50
SF
62G
100
70
100
SF
63G
150
105
150
SF
64G
200
140
200
6
SF
65G
300
210
300
SF
66G
400
280
400
SF
67G
500
350
500
SF
68G
600
420
600
Units
V
V
V
A
A
150
0.975
5
100
35
100
40
5
- 55 to + 150
- 55 to + 150
50
O
1.3
1.7
V
uA
uA
nS
pF
C/W
O
O
Maximum Reverse Recovery Time (Note 2)
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E13

 
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