SFH600
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
• Isolation test voltage (1.0 s), 5300 V
RMS
A
C
NC
i179004
1
2
3
6 B
5 C
4 E
• V
CEsat
= 0.25 (≤ 0.4) V, I
F
= 10 mA, I
C
= 2.5 mA
• Built to conform to VDE requirements
• High quality premium device
• Long term stability
• Storage temperature, - 55 °C to + 150 °C
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
DESCRIPTION
The SFH600 is an optocoupler with a GaAs LED emitter
which is optically coupled with a silicon planar
phototransistor detector. The component is packaged in a
plastic plug-in case, 20 AB DIN 41866.
The coupler transmits signals between two electrically
isolated circuits. The potential difference between the circuits
to be coupled should not exceed the maximum permissible
insulating voltage.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
ORDER INFORMATION
PART
SFH600-0
SFH600-1
SFH600-2
SFH600-3
SFH600-0X007
SFH600-1X007
SFH600-1X009
SFH600-2X006
SFH600-2X007
SFH600-3X006
SFH600-3X007
Note
For additional information on the available options refer to option information.
REMARKS
CTR 40 % to 80 %, DIP-6
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 160 % to 320 %, DIP-6
CTR 40 % to 80 %, SMD-6 (option 7)
CTR 63 % to 125 %, SMD-6 (option 7)
CTR 63 % to 125 %, SMD-6 (option 9)
CTR 100 % to 200 %, DIP-6 400 mil (option 6)
CTR 100 % to 200 %, SMD-6 (option 7)
CTR 160 % to 320 %, DIP-6 400 mil (option 6)
CTR 160 % to 320 %, SMD-6 (option 7)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Total power dissipation
OUTPUT
Collector emitter voltage
Emitter base voltage
Collector current
Power dissipation
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586
(1)
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
6.0
60
2.5
100
70
7.0
50
100
150
UNIT
V
mA
A
mW
V
V
mA
mA
mW
Document Number: 83662
Rev. 1.6, 10-Dec-08
t
P
≤
10 µs
I
FSM
P
diss
V
CE
V
EB
I
C
t = 1.0 ms
I
C
P
diss
For technical questions, contact: optocoupler.answers@vishay.com
SFH600
Optocoupler, Phototransistor
Output, with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between emitter
and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
(2)
max. 10 s, dip soldering
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
t = 1.0 s
V
ISO
5300
≥
7
≥
7
≥
0.4
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
Ω
°C
°C
°C
°C
V
RMS
mm
mm
mm
(1)
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
UNIT
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
SFH600-0
Collector emitter leakage
current
COUPLER
Saturation voltage collector
emitter voltage
Capacitance (input to output)
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
C
IO
0.25
0.4
0.6
V
pF
V
CE
= 10 V
SFH600-1
SFH600-2
SFH600-3
f = 1 MHz, V
CE
= 5 V
f = 1 MHz, V
CB
= 5 V
f = 1 MHz, V
EB
= 5 V
C
CE
C
CB
C
EB
R
thja
I
CEO
I
CEO
I
CEO
I
CEO
5.2
6.5
9.5
500
2
2
2
5
35
35
35
70
pF
pF
pF
K/W
nA
nA
nA
nA
I
F
= 60 mA
I
R
= 10 µA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
V
BR
I
R
C
O
R
thja
6
0.01
25
750
10
1.25
1.65
V
V
µA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83662
Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
587
SFH600
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SFH600-0
I
F
= 10 mA
I
C
/I
F
at V
CE
= 5.0 V
I
F
= 1 mA
SFH600-1
SFH600-2
SFH600-3
SFH600-0
SFH600-1
SFH600-2
SFH600-3
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
56
30
45
70
90
TYP.
MAX.
80
125
200
320
UNIT
%
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
Current
Rise time
Fall time
Turn-on time
Turn-off time
Cut-off frequency
SATURATED
SFH600-0
Current
SFH600-1
SFH600-2
SFH600-3
SFH600-0
Rise time
SFH600-1
SFH600-2
SFH600-3
SFH600-0
Fall time
SFH600-1
SFH600-2
SFH600-3
SFH600-0
Turn-on time
SFH600-1
SFH600-2
SFH600-3
SFH600-0
Turn-off time
SFH600-1
SFH600-2
SFH600-3
I
F
I
F
I
F
I
F
t
r
t
r
t
r
t
r
t
f
t
f
t
f
t
f
t
on
t
on
t
on
t
on
t
off
t
off
t
off
t
off
20
10
10
5
2.5
3
3
4
11
12
12
14
3.7
4.5
4.5
5.8
19
21
21
24
mA
mA
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
CC
= 5 V, R
L
= 75
Ω
V
CC
= 5 V, R
L
= 75
Ω
V
CC
= 5 V, R
L
= 75
Ω
V
CC
= 5 V, R
L
= 75
Ω
V
CC
= 5 V, R
L
= 75
Ω
V
CC
= 5 V, R
L
= 75
Ω
I
F
t
r
t
f
t
on
t
off
F
CO
10
2
2.5
3.2
3
250
mA
µs
µs
µs
µs
kHz
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
www.vishay.com
588
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83662
Rev. 1.6, 10-Dec-08
SFH600
Optocoupler, Phototransistor
Output, with Base Connection
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Vishay Semiconductors
10
3
I
F
R
L
= 75
Ω
I
C
V
CC
= 5
V
I
C
/I
F
(%)
5
(T
A
= 0 ˚C,
V
CE
= 5.0
V)
I
C
/I
F
= f (I
F
)
10
2
5
0
1
2
3
47
Ω
isfh600_01
10
1
5
10
0
10
-1
isfh600_04
5
10
0
I
F
(mA)
5
10
1
Fig. 1 - Linear Operation (without Saturation)
Fig. 4 - Current Transfer Ratio vs. Diode Current
10
3
5
I
F
1 k
Ω
I
C
/I
F
(%)
V
CC
= 5
V
10
2
5
0
1
2
3
(V
CE
= 5.0
V)
I
C
/I
F
= f (I
F
)
10
1
47
Ω
isfh600_02
5
10
0
10
-1
isfh600_05
5
10
0
I
F
(mA)
5
10
1
Fig. 2 - Switching Operation (with Saturation)
Fig. 5 - Current Transfer Ratio vs. Diode Current
10
3
5
(T
A
= - 25 ˚C,
V
CE
= 5.0
V)
I
C
/I
F
= f (I
F
)
I
C
/I
F
(%)
10
3
5
(TA = 50 ˚C, IC/IF = f (IF)
I
C
/I
F
(%)
10
2
5
0
1
2
3
10
2
5
0
1
2
3
10
1
5
10
1
5
10
0
10
-1
isfh600_03
5
10
0
I
F
(mA)
5
10
1
10
0
10
-1
isfh600_06
5
10
0
5
10
1
I
F
(mA)
Fig. 3 - Current Transfer Ratio vs. Diode Current
Fig. 6 - Current Transfer Ratio vs. Diode Current
Document Number: 83662
Rev. 1.6, 10-Dec-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
589
SFH600
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
10
3
5
(T
A
= 75 ˚C,
V
CE
= 5.0
V)
I
C
/I
F
= f (l
F
)
3
10
2
2
5
1
0
10
1
5
OHODO504
40
OHODO498
DC
Pulsbetrieb
Pulse
(I
C
= f (V
CE
)
I
F
=14 mA
I
F
=12 mA
30
I
C
/I
F
(%)
I
C
20
I
F
=10 mA
I
F
= 7 mA
DC
Pulsbetrieb
Pulse
5
10
0
5
10
1
10
I
F
= 1 mA
0
0
isfh600_10
I
F
= 5 mA
I
F
= 2 mA
10
V
CE
15
V
10
0
10
-1
isfh600_07
5
I
F
(mA)
Fig. 7 - Current Transfer Ratio vs. Diode Current
Fig. 10 - Output Characteristics SFH600-2, -3
10
3
5
3
I
C
/I
F
(%)
OHODO501
DC
Pulsbetrieb
Pulse
V
F
(V)
2
1
0
1.2
V
F
= f (I
F
)
25 °C
50 °C
75 °C
1.1
10
2
5
1.0
(I
F
= 10 mA,
V
CE
= 5.0
V)
I
C
/I
F
= f (T)
10
1
- 25
isfh600_08
0.9
0
25
T
A
(°C)
50
75
10
-1
5
10
0
I
F
(mA)
5
10
1
5
10
2
isfh600_11
Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature
Fig. 11 - Forward Voltage
30
25
20
I
c
(mA)
15
10
5
0
0
isfh600_09
OHODO497
DC
Pulsbetrieb
Pulse
(I
C
= f (V
CE
)
I
F
= 0
10
0
V
CE
= 35
V
I
CEO
= f (V,T)
(I
F
= 0)
I
B
=40
µA
I
CEO
(µA)
I
B
=30
µA
I
B
=20
µA
I
B
=15
µA
I
B
=10
µA
I
B
= 5
µA
IB = 2
µA
10
-1
10
-2
V
CE
= 12
V
10
-3
15
0
isfh600_12
5
V
CE
(V)
10
25
50
T
A
(°C)
75
100
Fig. 9 - Transistor Characteristics SFH600-2, -3
Fig. 12 - Collector Emitter Off-state Current
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83662
Rev. 1.6, 10-Dec-08
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