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SA571N

产品描述DUAL COMPANDER, 0.02MHz BAND WIDTH, PDIP16, PLASTIC, DIP-16
产品类别模拟混合信号IC    信号电路   
文件大小783KB,共13页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
标准  
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SA571N概述

DUAL COMPANDER, 0.02MHz BAND WIDTH, PDIP16, PLASTIC, DIP-16

SA571N规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证不符合
厂商名称Rochester Electronics
零件包装代码DIP
包装说明DIP,
针数16
Reach Compliance Codeunknown
模拟集成电路 - 其他类型COMPANDER
标称带宽0.02 MHz
JESD-30 代码R-PDIP-T16
JESD-609代码e0
长度19.175 mm
功能数量2
端子数量16
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态COMMERCIAL
座面最大高度4.44 mm
最大供电电压 (Vsup)18 V
最小供电电压 (Vsup)6 V
标称供电电压 (Vsup)6 V
表面贴装NO
温度等级INDUSTRIAL
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度7.62 mm

SA571N文档预览

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SA571
Compandor
The SA571 is a versatile low cost dual gain control circuit in which
either channel may be used as a dynamic range compressor or
expandor. Each channel has a full−wave rectifier to detect the average
value of the signal, a linerarized temperature−compensated variable
gain cell, and an operational amplifier.
The SA571 is well suited for use in cellular radio and radio
communications systems, modems, telephone, and satellite
broadcast/receive audio systems.
Features
http://onsemi.com
MARKING
DIAGRAMS
16
16
1
SOIC−16 WB
D SUFFIX
CASE 751G
SA571D
AWLYYWW
Complete Compressor and Expandor in one IChip
Temperature Compensated
Greater than 110 dB Dynamic Range
Operates Down to 6.0 VDC
System Levels Adjustable with External Components
Distortion may be Trimmed Out
Dynamic Noise Reduction Systems
Voltage Controlled Amplifier
Pb−Free Packages are Available*
1
16
16
1
PDIP−16
N SUFFIX
CASE 648
A
WL
YY
WW
1
SA571N
AWLYYWW
Applications
Cellular Radio
High Level Limiter
Low Level Expandor − Noise Gate
Dynamic Filters
CD Player
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN CONNECTIONS
D, and N Packages*
RECT CAP 1
RECT IN 1
DG
CELL IN 1
GND
INV. IN 1
RES. R
3
1
OUTPUT 1
THD TRIM 1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
RECT CAP 2
RECT IN 2
DG
CELL IN 2
V
CC
INV. IN 2
RES. R
3
2
OUTPUT 2
THD TRIM 2
TOP VIEW
*SOL − Released in Large SO Package Only.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. 3
Publication Order Number:
SA571/D
SA571
THD TRIM
R
3
INVERTER IN
R
3
20kW
VARIABLE
GAIN
V
REF
R
4
30kW
RECT IN R
1
10kW
RECTIFIER
RECT CAP
1.8V
OUTPUT
+
DG IN
R
2
20kW
Figure 1. Block Diagram
MAXIMUM RATINGS
Rating
Maximum Operating Voltage
Operating Ambient Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction−to−Ambient
N Package
D Package
Symbol
V
CC
T
A
T
J
P
D
R
qJA
Value
18
−40 to +85
150
400
75
105
Unit
VDC
°C
°C
mW
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
http://onsemi.com
2
SA571
ELECTRICAL CHARACTERISTICS
(V
CC
= +15 V, T
A
= 25°C, unless otherwise noted)
Characteristic
Supply Voltage
Supply Current
Output Current Capability
Output Slew Rate
Gain Cell Distortion (Note 2)
Resistor Tolerance
Internal Reference Voltage
Output DC Shift (Note 3)
Expandor Output Noise
Unity Gain Level (Note 5)
Gain Change (Notes 2 and 4)
Reference Drift (Note 4)
Resistor Drift (Note 4)
Tracking Error
(Measured Relative to Value at Unity Gain)
Equals [V
O
− V
O
(unity gain)] dB − V
2
dBm
Channel Separation
1.
2.
3.
4.
5.
Input to V
1
and V
2
grounded.
Measured at 0 dBm, 1.0 kHz.
Expandor AC input change from no signal to 0 dBm.
Relative to value at T
A
= 25°C.
0 dBm = 775 mV
RMS
.
Symbol
V
CC
I
CC
I
OUT
SR
Test Conditions
No Signal
Untrimmed
Trimmed
Untrimmed
No Signal, 15 Hz−20 kHz
(Note 1)
1.0 kHz
−40°C to +85°C
Rectifier Input,
V
CC
= +6.0 V
V
2
= +6.0 dBm, V
1
= 0 dB
V
2
= −30 dBm, V
1
= 0 dB
Min
6.0
±20
1.65
−1.5
+0.2
+0.2
60
−1.0, +1.5
dB
Typ
4.2
±.5
0.5
0.1
±5
1.8
±90
20
0
±0.1
+2.0, −25
+8.0, −0
Max
18
4.8
2.0
±15
1.95
±150
60
+1.5
+20, −50
Unit
V
mA
mA
V/ms
%
%
V
mV
mV
dBm
dB
mV
%
dB
http://onsemi.com
3
SA571
Circuit Description
COMPRESSOR INPUT LEVEL OR EXPANDOR
OUTPUT LEVEL (dBm)
The SA571 compandor building blocks, as shown in the
block diagram, are a full−wave rectifier, a variable gain cell,
an operational amplifier and a bias system. The arrangement
of these blocks in the IC result in a circuit which can perform
well with few external components, yet can be adapted to
many diverse applications.
The full−wave rectifier rectifies the input current which
flows from the rectifier input, to an internal summing node
which is biased at V
REF
. The rectified current is averaged on
an external filter capacitor tied to the C
RECT
terminal, and
the average value of the input current controls the gain of the
variable gain cell. The gain will thus be proportional to the
average value of the input signal for capacitively−coupled
voltage inputs as shown in the following equation. Note that
for capacitively−coupled inputs there is no offset voltage
capable of producing a gain error. The only error will come
from the bias current of the rectifier (supplied internally)
which is less than 0.1
mA.
|V
*
V
REF
| avg
G
T
IN
R
1
or
as brought out externally. A resistor, R
3
, is brought out from
the summing node and allows compressor or expander gain
to be determined only by internal components.
The output stage is capable of
±
20 mA output current.
This allows a +13 dBm (3.5 V
RMS
) output into a 300
W
load
which, with a series resistor and proper transformer, can
result in +13 dBm with a 600
W
output impedance.
A bandgap reference provides the reference voltage for all
summing nodes, a regulated supply voltage for the rectifier
and
DG
cell, and a bias current for the
DG
cell. The low
tempco of this type of reference provides very stable biasing
over a wide temperature range.
The typical performance characteristics illustration
shows the basic input−output transfer curve for basic
compressor or expander circuits.
+20
+10
0
−10
−20
−30
−40
−50
−60
−70
−80
−40
−30 −20 −10
0
+10
G
T
| V
IN
| avg
R
1
The speed with which gain changes to follow changes in
input signal levels is determined by the rectifier filter
capacitor. A small capacitor will yield rapid response but
will not fully filter low frequency signals. Any ripple on the
gain control signal will modulate the signal passing through
the variable gain cell. In an expander or compressor
application, this would lead to third harmonic distortion, so
there is a trade−off to be made between fast attack and decay
times and distortion. For step changes in amplitude, the
change in gain with time is shown by this equation.
G(t)
+
(G
initial
*
G
final
) e
t
R
)
G
final
t
+
10kW
C
RECT
*t
COMPRESSOR OUTPUT LEVEL
OR
EXPANDOR INPUT LEVEL (dBm)
Figure 2. Basic Input−Output Transfer Curve
V
CC
= 15V
0.1mF
13
6, 11
20kW
2.2mF 20kW
V
1
3, 14
DG
+
10mF
The variable gain cell is a current−in, current−out device
with the ratio I
OUT
/I
IN
controlled by the rectifier. I
IN
is the
current which flows from the
DG
input to an internal
summing node biased at V
REF
. The following equation
applies for capacitively−coupled inputs. The output current,
I
OUT
, is fed to the summing node of the op amp.
I
IN
+
V
IN
*
V
REF
V
+
IN
R
2
R
2
7, 10
V
REF
V
O
A compensation scheme built into the
DG
cell
compensates for temperature and cancels out odd harmonic
distortion. The only distortion which remains is even
harmonics, and they exist only because of internal offset
voltages. The THD trim terminal provides a means for
nulling the internal offsets for low distortion operation.
The operational amplifier (which is internally
compensated) has the non−inverting input tied to V
REF
, and
the inverting input connected to the
DG
cell output as well
2.2mF 10kW
V
2
2, 15
4
1, 16
2.2mF
30kW
5, 12
8.2kW
8, 9
200pF
Figure 3. Typical Test Circuit
http://onsemi.com
4
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