DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD48; PUMD48
NPN/PNP resistor-equipped
transistors;
R1 = 47 kΩ, R2 = 47 kΩ
and R1 = 2.2 kΩ, R2 = 47 kΩ
Product specification
Supersedes data of 2004 Jun 02
2004 Jun 24
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral driver
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R1
R2
PARAMETER
collector-emitter
voltage
peak collector current
PEMD48;
PUMD48
TYP. MAX. UNIT
−
−
47
47
50
100
−
−
−
−
V
mA
Transistor TR1 (NPN)
bias resistor
bias resistor
kΩ
kΩ
Transistor TR2 (PNP)
R1
R2
bias resistor
bias resistor
2.2
47
kΩ
kΩ
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PEMD48
PUMD48
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT666
SOT363
EIAJ
−
SC-88
48
4*8
(1)
MARKING CODE
PNP/PNP
COMPLEMENT
−
−
NPN/NPN
COMPLEMENT
−
−
2004 Jun 24
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PEMD48;
PUMD48
PINNING
TYPE NUMBER
PEMD48
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
6
5
4
R1
TR1
R2
1
Top view
2
3
1
MAM448
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
5
4
1
2
3
6
R2
TR2
R1
4
5
6
2
3
PUMD48
handbook, halfpage
1
6
5
4
R1
TR1
R2
1
Top view
2
3
MAM343
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
5
4
2
3
4
6
R2
TR2
R1
5
6
1
2
3
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMD48
PUMD48
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
VERSION
SOT666
SOT363
2004 Jun 24
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
−65
−
−65
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
300
300
200
200
MIN.
PEMD48;
PUMD48
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. The only recommended soldering method is reflow soldering.
mW
mW
storage temperature
junction temperature
operating ambient temperature
+5
−12
100
100
V
V
mA
mA
mW
mW
°C
°C
°C
+40
−10
V
V
open emitter
open base
open collector
50
50
10
V
V
V
+150
150
+150
2004 Jun 24
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th(j-a)
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from junction to ambient
SOT363
SOT666
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. The only recommended soldering method is reflow soldering.
T
amb
≤
25
°C
note 1
notes 1 and 2
416
416
T
amb
≤
25
°C
note 1
notes 1 and 2
625
625
PARAMETER
CONDITIONS
VALUE
PEMD48;
PUMD48
UNIT
K/W
K/W
K/W
K/W
2004 Jun 24
5
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