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KTA1298

产品描述30V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 30V, 0.8A, 100, 320, 1V
文件大小231KB,共4页
制造商Galaxy Microelectronics
下载文档 详细参数 全文预览

KTA1298概述

30V,0.8A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 30V, 0.8A, 100, 320, 1V

KTA1298规格参数

参数名称属性值
厂商名称Galaxy Microelectronics
零件包装代码SOT-23
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
最大集电极电流 (IC)0.8 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)40
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)120 MHz
类别
极性PNP
V(BR)CEO (V) min.30
IC (A)0.8
hFE min100
hFE max320
Condition1_VCE (V)1
Condition1_IC (mA)100
VCE (sat) (V)0.4
Condition2_IC (mA)500
Condition2_IB (mA)20
fT (MHz) min.120(typ)
PD (W) max.0.2
AEC QualifiedNo
最高工作温度150
最低工作温度-55
是否无铅Yes
符合ReachYes
符合RoHSYes
ECCN代码EAR99
Package OutlinesSOT-23

KTA1298文档预览

Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain:h
FE
=100-320.
Low saturation voltage:V
CE(sat)
=-0.4V(Max)
(I
C
=-500mA,I
B
=-20mA).
Suitable for driver stage of small motor.
Complementary to KTC3265.
Small package.
KTA1298
Pb
Lead-free
SOT-23
APPLICATIONS
Low frequency power amplifier application.
Power switching application.
ORDERING INFORMATION
Type No.
KTA1298
Marking
IO/IY
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
-35
-30
-5
-800
200
-55 to +150
Units
V
V
V
mA
mW
C095
Rev.B
www.gmesemi.com
1
Production specification
Silicon Epitaxial Planar Transistor
KTA1298
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-100mA
V
CE
=-1V,I
C
=-800mA
I
C
=-500mA, I
B
=-20mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V,I
E
=0,f=1MHz
-0.5
120
13
100
40
-0.4
-0.8
V
V
MHz
pF
MIN
-35
-30
-5
-0.1
-0.1
320
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION
Rank
Range
OF h
FE(1)
O
100-200
Y
160-320
C095
Rev.B
www.gmesemi.com
2
Production specification
Silicon Epitaxial Planar Transistor
KTA1298
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
C095
Rev.B
www.gmesemi.com
3
Production specification
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
KTA1298
SOT-23
SOT-23
Dim
E
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
K
B
1.0 Typical
0.4 Typical
0.35
1.80
0.02
0.48
2.00
0.1
D
G
J
E
G
H
J
0.1 Typical
2.20
2.60
H
C
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
0.80
Unit : mm
PACKAGE INFORMATION
Device
KTA1298
Package
SOT-23
Shipping
3000/Tape&Reel
C095
Rev.B
www.gmesemi.com
4

 
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