KSC2333
KSC2333
High Speed Switching Application
• Low Collector Saturation Voltage
• Specified of Reverse Biased SOA With Inductive Load
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1.Base
Value
500
400
7
2
4
1
15
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
*PW≤350µs, Duty Cycle≤10%
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 0.5A, I
B
=0.1A, L = 1mH
I
C
= 0.5A, I
B1
= -I
B2
= 0.1A
T
C
= 125°C, L = 180µH, clamped
I
C
= 1A, I
B1
= 0.2A, -I
B2
=0.2A
T
C
= 125°C, L = 180µH, clamped
V
CB
= 400V, I
E
= 0
V
CE
= 400V, R
BE
=51Ω, T
C
= 125°C
V
CE
= 400V, V
BE
(off) = -5V
V
CE
= 400V, V
BE
(off) = -5V @
T
C
= 125°C
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 0.5A, I
B
= 0.1A
V
CC
= 150V, I
C
= 0.5A
I
B1
= - I
B2
= 0.1A
R
L
= 300Ω
20
10
Min.
400
450
400
10
1
10
1
10
80
1
1.2
1
2.5
1
V
V
µs
µs
µs
Max.
Units
V
V
V
µA
mA
µA
mA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed
h
FE
Classification
Classification
h
FE1
©2001 Fairchild Semiconductor Corporation
R
20 ~ 40
O
30 ~ 60
Y
40 ~ 80
Rev. A1, June 2001
KSC2333
Typical Characteristics
1.0
1000
Ic[A], COLLECTOR CURRENT
0.8
I
B
= 100mA
I
B
= 60mA
I
B
= 90mA
I
B
= 80mA
I
B
= 70mA
I
B
= 50mA
V
CE
= 5V
Pulsed
h
FE
, DC CURRENT GAIN
5
100
0.6
I
B
= 40mA
I
B
= 30mA
I
B
= 20mA
0.4
I
B
= 10mA
0.2
10
0.0
0
1
2
3
4
1
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
/I
B
= 5
Pulsed
I
C
= 5I
B1
= -5I
B2
Pulsed
t
on
[
µ
s], TURN ON TIME
t
stg
[
µ
s], STORAGE TIME
t
f
[
µ
s], FALL TIME
t
stg
1
1
V
BE
(sat)
t
f
t
on
0.1
0.1
V
CE
(sat)
0.01
1
10
100
1000
0.01
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Turn On, Storage and Fall Time
vs Collector Current
10000
1.0
0.9
I
C
[mA], COLLECTOR CURRENT
Diss
1000
ipat
ion
L
1m
imit
ed
S
0
µ
S
0
µ
S
I
C
(A), COLLECTOR CURRENT
10
PW
=1
0.8
0.7
0.6
0.5
0.4
b
S/
ite
m
Li
d
10
m
S
V
CEO
(SUS)
V
CEX
(SUS)
100
0.3
0.2
0.1
10
1
10
100
1000
0.0
0
50
100
150
200
250
300
350
400
450
500
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
(V), COLLECTOR-EMITTER VOLTAGE
Figure 5. Forward Bias Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2333
Typical characteristics
(Continued)
160
20.0
140
17.5
120
P
C
[W], POWER DISSIPATION
150
175
200
15.0
dT(%), I
c
DERATING
100
12.5
80
10.0
S/b Limited
60
7.5
40
Dissipation Limited
5.0
20
2.5
0
0
25
50
o
0.0
75
100
125
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
T
C
[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2333
Package Demensions
TO-220
9.90
±0.20
1.30
±0.10
2.80
±0.10
4.50
±0.20
(8.70)
ø3.60
±0.10
(1.70)
1.30
–0.05
+0.10
9.20
±0.20
(1.46)
13.08
±0.20
(1.00)
(3.00)
15.90
±0.20
1.27
±0.10
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
10.08
±0.30
18.95MAX.
(3.70)
)
(45
°
0.50
–0.05
+0.10
2.40
±0.20
10.00
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
