TSTS710.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
TSTS710. series are infrared emitting diodes in stan-
dard GaAs technology in a hermetically sealed TO–18
package. Their glass lenses provide a very high ra-
diant intensity without external optics.
Features
D
D
D
D
D
D
Very high radiant intensity
Suitable for pulse operation
Narrow angle of half intensity
ϕ
=
±
5
°
Peak wavelength
l
p
= 950 nm
High reliability
Good spectral matching to Si photodetectors
94 8483
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
T
case
25
°
C
t
p
/T = 0.5, t
p
100
m
s,
T
case
25
°
C
t
p
100
m
s
Symbol
V
R
I
F
I
FM
I
FSM
P
V
P
V
T
j
T
stg
R
thJA
R
thJC
Value
5
250
500
2.5
170
500
100
–55...+100
450
150
Unit
V
mA
mA
A
mW
mW
°
C
°
C
K/W
K/W
x
x
x
x
T
case
x
25
°
C
Document Number 81047
Rev. 2, 20-May-99
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1 (5)
TSTS710.
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of
f
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise Time
Fall Time
Test Conditions
I
F
= 100 mA, t
p
20 ms
I
R
= 100
m
A
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
20 ms
I
F
= 100 mA
x
x
Symbol
V
F
V
(BR)
C
j
TK
f
e
ϕ
Min
5
Typ
1.3
30
7
–0.8
±5
950
50
400
400
Max
1.7
f
e
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A, t
p
/T = 0.01,
10
m
s
t
p
I
F
= 1.5 A, t
p
/T = 0.01,
t
p
10
m
s
l
p
Dl
t
r
t
f
x
x
Unit
V
V
pF
mW
%/K
deg
nm
nm
ns
ns
Type Dedicated Characteristics
T
amb
= 25
_
C
Parameter
Radiant Intensity
y
Test Conditions
I
F
=100mA, t
p
=20ms
Type
TSTS7100
TSTS7101
TSTS7102
TSTS7103
Symbol
I
e
I
e
I
e
I
e
Min
10
12.5
20
32
Typ
Max
25
40
64
Unit
mW/sr
mW/sr
mW/sr
mW/sr
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
600
P
V
– Power Dissipation ( mW )
I
F
– Forward Current ( mA )
500
400
300
200
R
thJA
100
0
0
94 8017 e
300
R
thJC
250
200
R
thJC
150
100
50
0
25
50
75
100
125
94 8018 e
R
thJA
0
20
40
60
80
100
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2 (5)
Document Number 81047
Rev. 2, 20-May-99
TSTS710.
Vishay Telefunken
10
1
I
e
– Radiant Intensity ( mW/sr )
I
F
– Forward Current ( A )
1000
TSTS 7102
100
TSTS 7103
10
TSTS 7101
1
t
p
/ T = 0.01 , t
p
= 20
m
s
0.1
10
–1
10
0
10
1
10
2
94 8001 e
I
FSM
= 2.5 A ( Single Pulse )
t
p
/ T = 0.01
10
0
0.05
0.1
0.2
0.5
10
–1
10
–2
10
0
94 8003 e
t
p
– Pulse Duration ( ms )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
10
4
I
F
– Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
1000
F
e
– Radiant Power ( mW )
0
1
2
3
4
10
3
10
2
10
1
10
0
10
–1
100
10
1
0.1
10
0
94 7977 e
94 7996 e
V
F
– Forward Voltage ( V )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 4. Forward Current vs. Forward Voltage
1.2
V
Frel
– Relative Forward Voltage
1.1
I
e rel
;
F
e rel
I
F
= 10 mA
1.0
0.9
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
I
F
= 20 mA
0.8
0.4
0.8
0.7
0
20
40
60
80
100
94 7993 e
0
–10 0 10
50
100
140
94 7990 e
T
amb
– Ambient Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81047
Rev. 2, 20-May-99
www.vishay.com
3 (5)
TSTS710.
Vishay Telefunken
0°
1.25
1.0
I
e rel
– Relative Radiant Intensity
10
°
20
°
30°
F
e rel
– Relative Radiant Power
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.75
0.5
0.25
I
F
= 100 mA
0
900
950
1000
94 7994 e
l
– Wavelength ( nm )
0.6
94 8019 e
0.4
0.2
0
0.2
0.4
0.6
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Dimensions in mm
14486
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4 (5)
Document Number 81047
Rev. 2, 20-May-99
TSTS710.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81047
Rev. 2, 20-May-99
www.vishay.com
5 (5)
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