REI Datasheet
CA3146, CA3146A, CA3183, CA3183A
High-Voltage Transistor Arrays
The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN
transistor arrays on common monolithic substrate.
Types CA3146A and CA3146 consist of five transistors with two of the transistors connected to form
a differentially connected pair. These types are recommended for low power applications in the DC
through VHF range. (CA3146A and CA3146 are high voltage versions of the popular predecessor
type CA3046.)
Rochester Electronics
Manufactured Components
Rochester branded components are
manufactured using either die/wafers
purchased from the original suppliers
or Rochester wafers recreated from the
original IP. All recreations are done with
the approval of the OCM.
Parts are tested using original factory
test programs or Rochester developed
test solutions to guarantee product
meets or exceeds the OCM data sheet.
Quality Overview
•
ISO-9001
• AS9120 certification
• Qualified Manufacturers List (QML) MIL-PRF-38535
• Class Q Military
• Class V Space Level
• Qualified Suppliers List of Distributors (QSLD)
• Rochester is a critical supplier to DLA and
meets all industry and DLA standards.
Rochester Electronics, LLC is committed to supplying
products that satisfy customer expectations for
quality and are equal to those originally supplied by
industry manufacturers.
The original manufacturer’s datasheet accompanying this document reflects the performance
and specifications of the Rochester manufactured version of this device. Rochester Electronics
guarantees the performance of its semiconductor products to the original OEM specifications.
‘Typical’ values are for reference purposes only. Certain minimum or maximum ratings may be
based on product characterization, design, simulation, or sample testing.
© 2013 Rochester Electronics, LLC. All Rights Reserved 07112013
To learn more, please visit
www.rocelec.com
CA3146, CA3146A, CA3183, CA3183A
DUCT
E PRO PRODUCT
L ET
OBSO
ITUTE
3
SUBST 86, CA308
Sheet
Data
E
SSIBL 6, CA30
PO
CA304
TM
May 2001
File Number
532.6
High-Voltage Transistor Arrays
itle
A31
,
314
,
318
318
)
b-
t
igh-
lt-
e
n-
tor
rays
utho
)
ey-
rds
ter-
rpo-
ion,
e
e,
nsis-
ay,
st
N,
V,
ma
ma,
z ft,
h
lt-
The CA3146A, CA3146, CA3183A, and CA3183 are general
purpose high voltage silicon NPN transistor arrays on a
common monolithic substrate.
Types CA3146A and CA3146 consist of five transistors with two
of the transistors connected to form a differentially connected
pair. These types are recommended for low power applications
in the DC through VHF range. (CA3146A and CA3146 are high
voltage versions of the popular predecessor type CA3046.)
Types CA3183A and CA3183 consist of five high current
transistors with independent connections for each transistor.
In addition two of these transistors (Q
1
and Q
2
) are matched
at low current (i.e., 1mA) for applications where offset
parameters are of special importance. A special substrate
terminal is also included for greater flexibility in circuit
design. (CA3183A and CA3183 are high voltage versions of
the popular predecessor type CA3083.)
The types with an “A” suffix are premium versions of their
non-“A” counterparts and feature tighter control of
breakdown voltages making them more suitable for higher
voltage applications.
For detailed application information, see companion
Application Note AN5296 “Application of the CA3018
Integrated Circuit Transistor Array.”
Features
• Matched General Purpose Transistors
- V
BE
Match . . . . . . . . . . . . . . . . . . . . . . . . .
±5mV
(Max)
• Operation from DC to 120MHz (CA3146, CA3146A)
• Low Noise Figure . . . . . . . . . . 3.2dB (CA3146, CA3146A)
• High I
C
. . . . . . . . . . . . 75mA (Max) (CA3183, CA3183A)
Applications
• General Use in Signal Processing Systems in DC through
VHF Range
• Custom Designed Differential Amplifiers
• Temperature Compensated Amplifiers
• Lamp and Relay Drivers (CA3183, CA3183A)
• Thyristor Firing (CA3183, CA3183A)
Pinouts
CA3146, CA3146A (PDIP, SOIC)
TOP VIEW
1
Q
5
2
DIFF.
PAIR
3
4
Q
2
Q
4
Q
1
14
13 SUBSTRATE
12
11
10
9
Q
3
8
Part Number Information
PART
NUMBER
(BRAND)
CA3146AE
CA3146AM
(3146A)
CA3146E
CA3146M
(3146)
CA3146M96
(3146)
CA3183AE
CA3183AM96
(3183A)
CA3183E
CA3183M
(3183)
CA3183M96
(3183)
TEMP.
RANGE
(
o
C)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
PACKAGE
14 Ld PDIP
14 Ld SOIC
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC Tape and
Reel
16 Ld PDIP
16 Ld SOIC Tape and
Reel
16 Ld PDIP
16 Ld SOIC
16 Ld SOIC Tape and
Reel
PKG.
NO.
E14.3
M14.15
E14.3
M14.15
M14.15
E16.3
M16.15
E16.3
5
6
7
CA3183, CA3183A (PDIP, SOIC)
TOP VIEW
1
2
3
4
SUBSTRATE 5
Q
2
Q
5
Q
1
16
15
14
13
12
11
Q
4
Q
3
8
9
10
M16.15
6
M16.15
7
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Americas Inc.
|
Copyright © Intersil Americas Inc. 2001
CA3146, CA3146A, CA3183, CA3183A
Absolute Maximum Ratings
Collector-to-Emitter Voltage (V
CEO
)
CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector-to-Base Voltage (V
CBO
)
CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector-to-Substrate Voltage (V
CIO
, Note 1)
CA3146A, CA3183A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter to Base Voltage (V
EBO
) all types . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current
CA3146A, CA3146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
Base Current (I
B
) - CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . 20mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θ
JA
(
o
C/W)
14 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
100
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
200
16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .
95
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation (Any One Transistor, Note 3)
CA3146A, CA3146. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
CA3183A, CA3183. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Package). . . . . . . . . 150
o
C
Maximum Storage Temperature Range (all types) . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to 85
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more
negative than any collector voltage in order to maintain isolation between transistors, and to provide for normal transistor action. To avoid
undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass
capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
CA3146 Series
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3146
CA3146A
PARAMETER
SYMBOL
T
A
= 25
o
C
MN
TYP
MAX
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
Collector-to-Emitter
Breakdown Voltage
Collector-to-Substrate
Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
DC Forward-Current Transfer
Ratio
V
(BR)CBO
I
C
= 10µA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CIO
I
CI
= 10µA, I
B
= 0,
I
E
= 0
V
CE
= 10V, I
B
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10µA
Base-to-Emitter Voltage
Collector-to-Emitter
Saturation Voltage
V
BE
V
CE SAT
V
CE
= 3V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
-
-
-
-
1
2
3
3
3
4
5
40
30
40
5
-
-
-
30
-
0.63
-
72
56
72
7
See
Curve
0.002
85
100
90
0.73
0.33
-
-
-
-
5
100
-
-
-
0.83
-
50
40
50
5
-
-
-
30
-
0.63
-
72
56
72
7
See
Curve
0.002
85
100
90
0.73
0.33
-
-
-
-
5
100
-
-
-
0.83
-
V
V
V
V
µA
nA
-
-
-
V
V
V
(BR)EBO
I
E
= 10µA, I
C
= 0
I
CEO
I
CBO
h
FE
DC CHARACTERISTICS FOR TRANSISTORS Q
1
AND Q
2
(As A Differential Amplifier)
Magnitude of Input Offset
Voltage |V
BE1
- V
BE2
|
Magnitude of Base-to-Emitter
Temperature Coefficient
|V
IO
|
∆V
BE
---------------
-
∆T
V
CE
= 5V, I
E
= 1mA
V
CE
= 5V, I
E
= 1mA
6, 7
-
-
-
0.48
1.9
5
-
-
-
0.48
1.9
5
-
mV
mV/
o
C
2
CA3146, CA3146A, CA3183, CA3183A
Electrical Specifications
CA3146 Series
(Continued)
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
-
CA3146
CA3146A
PARAMETER
Magnitude of V
IO
(V
BE1
- V
BE2
)
Temperature Coefficient
Magnitude of Input Offset Current
|I
IO1
- I
IO2
| (CA3146AE and
CA3146E Only)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
SYMBOL
∆V
IO
-------------
-
∆T
I
IO
T
A
= 25
o
C
V
CE
= 5V,
I
C1
= I
C2
= 1mA
V
CE
= 5V,
I
C1
= I
C2
= 1mA
MN
-
TYP
1.1
MAX
-
MIN
-
TYP
1.1
MAX
-
UNITS
µV/
o
C
8
-
0.3
2
-
0.3
2
µA
NF
f = 1kHz, V
CE
= 5V,
I
C
= 100µA, Source
Resistance = 1kΩ
10
-
3.25
-
-
3.25
-
dB
Low-Frequency, Small-Signal
Equivalent-Circuit Characteristics:
Forward-Current Transfer
Ratio
Short-Circuit Input Impedance
Open-Circuit Output Impedance
Open-Circuit Reverse Voltage
Transfer Ratio
Admittance Characteristics:
Forward Transfer Admittance
Input Admittance
Output Admittance
Reverse Transfer
Admittance
Gain-Bandwidth Product
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate
Capacitance
Y
FE
Y
IE
Y
OE
Y
RE
f
T
C
EB
C
CB
C
Cl
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
V
CE
= 5V, I
C
= 3mA
V
EB
= 5V, I
E
= 0
V
CB
= 5V, I
C
= 0
V
Cl
= 5V, I
C
= 0
13
14
15
16
17
18
18
18
300
-
-
-
-
-
-
31-
j1.5
0.3 +
j0.04
0.001
+ j0.03
See
Curve
500
0.70
0.37
2.2
-
-
-
-
300
-
-
-
-
-
-
-
-
-
31-j1.5
0.35 +
j0.04
0.001
+ j0.03
See
Curve
500
0.70
0.37
2.2
-
-
-
-
-
-
-
mS
mS
mS
mS
MHz
pF
pF
pF
h
FE
h
IE
h
OE
h
RE
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
12
12
12
12
-
-
-
-
100
3.5
15.6
1.8 x
10
-4
-
-
-
-
-
-
-
-
100
2.7
15.6
1.8 x
10
-4
-
-
-
-
-
kΩ
µS
-
Electrical Specifications
CA3183 Series
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3183
CA3183A
PARAMETER
SYMBOL
T
A
= 25
o
C
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
CI
= 100µA, I
B
= 0,
I
E
= 0
I
E
= 500µA, I
C
= 0
V
CE
= 10V, I
B
= 0
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
Collector-to-Emitter
Breakdown Voltage
Collector-to-Substrate
Breakdown Voltage
Emitter-to-Base
Breakdown Voltage
Collector-Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)ClO
V
(BR)EBO
I
CEO
-
-
-
-
19
40
30
40
5
-
-
-
-
-
-
-
-
-
-
10
50
40
50
5
-
-
-
-
-
-
-
-
-
-
10
V
V
V
V
µA
3
CA3146, CA3146A, CA3183, CA3183A
Electrical Specifications
CA3183 Series
(Continued)
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
20
21, 22
-
23
24
CA3183
CA3183A
PARAMETER
Collector-Cutoff Current
DC Forward-Current
Transfer Ratio
Base-to-Emitter Voltage
Collector-to-Emitter
Saturation Voltage
SYMBOL
I
CBO
h
FE
T
A
= 25
o
C
V
CB
= 10V, I
E
= 0
V
CE
= 3V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
MIN
-
40
40
0.65
-
TYP
-
-
-
0.75
1.7
MAX
1
-
-
0.85
3.0
MIN
-
40
40
0.65
-
TYP
-
-
-
0.75
1.7
MAX
1
-
-
0.85
3.0
UNITS
µA
-
-
V
V
V
BE
V
CE SAT
(Note 3)
V
CE
= 3V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
FOR TRANSISTORS Q
1
AND Q
2
(AS A DIFFERENTIAL AMPLIFIER)
Absolute Input Offset
Voltage
Absolute Input Offset
Current
|V
IO
|
|I
IO
|
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 1mA
25
26
-
-
0.47
0.78
5
2.5
-
-
0.47
0.78
5
2.5
mV
µA
Typical Performance Curves
10
3
COLLECTOR CUTOFF CURRENT (nA)
I
B
= 0
10
2
V
CE
= 10V
10
V
CE
= 5V
1
10
-1
10
-2
10
-3
0
25
50
75
DC Characteristics - CA3146 Series
10
2
COLLECTOR CUTOFF CURRENT (nA)
10
1
10
-1
10
-2
10
-3
10
-4
0
25
50
75
TEMPERATURE (
o
C)
100
125
I
E
= 0
V
CB
= 15
V
CB
= 10
V
CB
= 5
100
125
TEMPERATURE (
o
C)
FIGURE 1. I
CEO
vs TEMPERATURE FOR ANY TRANSISTOR
FIGURE 2. I
CBO
vs TEMPERATURE FOR ANY TRANSISTOR
DC FORWARD CURRENT TRANSFER RATIO
160
140
120
100
V
CE
= 5V
BASE TO EMITTER VOLTAGE (V)
T
A
= 125
o
C
V
CE
= 5V
0.9
0.8
0.7
0.6
0.5
0.4
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
E
= 1mA
I
E
= 3mA
25
o
C
80
60
-55
o
C
40
20
0.01
0.1
1
10
COLLECTOR CURRENT (mA)
FIGURE 3. h
FE
vs I
C
FOR ANY TRANSISTOR
FIGURE 4. V
BE
vs TEMPERATURE FOR ANY TRANSISTOR
4
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