TSOP12..KS1
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type
TSOP1230KS1
TSOP1236KS1
TSOP1238KS1
TSOP1256KS1
f
0
30 kHz
36 kHz
38 kHz
56 kHz
Type
f
0
TSOP1233KS1 33 kHz
TSOP1237KS1 36.7 kHz
TSOP1240KS1 40 kHz
Description
The TSOP12..KS1 – series are miniaturized receivers for
infrared remote control systems. PIN diode and preampli-
fier are assembled on lead frame, the epoxy package is
designed as IR filter. The demodulated output signal can
directly be decoded by a microprocessor.
The main benefit is the reliable function even in disturbed
ambient and the protection against uncontrolled output
pulses.
12797
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
Improved shielding against electrical field distur-
bance
D
TTL and CMOS compatibility
D
D
D
D
Output active low
Low power consumption
Continuous data transmission possible (1200 bit/s)
Suitable burst length
≥10
cycles/burst
Special Features
D
Enhanced immunity against all kinds of disturbance
light
D
No occurrence of disturbance pulses at the output
Block Diagram
2
Input
Control
Circuit
100 k
W
3
PIN
AGC
Band
Pass
Demodu-
lator
1
GND
OUT
V
S
94 8136
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
1 (7)
TSOP12..KS1
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test Conditions
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
–0.3...6.0
5
–0.3...6.0
5
100
–25...+85
–25...+85
50
260
Unit
V
mA
V
mA
°
C
°
C
°
C
mW
°
C
(T
amb
85
°
C)
t 5s
x
x
Basic Characteristics
T
amb
= 25
_
C
Parameter
Supply Current (
pp y
(Pin 2)
)
Transmission Distance
Output Voltage Low (Pin 3)
Irradiance (30 – 40 kHz)
Test Conditions
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
E
v
= 0, test signal see fig.7,
IR diode TSIP5201, I
F
= 400 mA
I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
,
f = f
o
, t
p
/T = 0.4
Pulse width tolerance:
t
pi
– 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal (see fig.7)
Pulse width tolerance:
t
pi
– 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal (see fig.7)
Angle of half transmission distance
Symbol
I
SD
I
SH
d
V
OSL
E
e min
0.35
Min
0.4
Typ
0.6
1.0
35
Max
0.8
Unit
mA
mA
m
mV
mW/m
2
250
0.5
Irradiance (56 kHz)
E
e min
0.4
0.6
mW/m
2
Irradiance
Directivity
E
e max
ϕ
1/2
30
±45
W/m
2
deg
Application Circuit
330
W
*)
2
TSOP12..
TSAL62..
3
4.7
m
F *)
>10 k
W
optional
+5 V **)
m
C
1
12844
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5 V<V
S
<5.5V
2 (7)
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
TSOP12..KS1
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
E
e min
– Threshold Irradiance ( mW/m
2
)
1.0
E
e min
/ E
e
– Rel. Responsitivity ( % )
0.8
2.0
f ( E ) = f
0
1.6
1.2
0.8
0.4
0.0
0.7
94 8143
0.6
0.4
0.2
0.0
0.8
0.9
1.0
1.1
1.2
1.3
f / f
0
– Relative Frequency
f = f
0
5%
D
f ( 3 dB ) = f
0
/ 10
"
0.0
94 8147
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV / m )
Figure 1. Frequency Dependence of Responsivity
1.0
0.9
t
po
– Output Pulse Length (ms)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
12841
Figure 4. Sensitivity vs. Electric Field Disturbances
10
f = f
0
1 kHz
Input burst duration
E
e min
– Threshold Irradiance ( mW/m
2
)
10 kHz
1
l
= 950 nm,
optical test signal, fig.7
100 Hz
1.0
10.0
100.0 1000.0 10000.0
94 9106
0.1
0.01
0.1
1
10
100
1000
E
e
– Irradiance ( mW/m
2
)
D
V
s RMS –
AC Voltage on DC Supply Voltage ( mV )
Figure 2. Sensitivity in Dark Ambient
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.01
0.10
1.00
10.00
100.00
Ambient,
l
= 950 nm
Correlation with ambient light sources
( Disturbance effect ) : 10W/m
2
1.4 klx
( Stand.illum.A, T = 2855 K ) 8.2 klx
( Daylight, T = 5900 K )
Figure 5. Sensitivity vs. Supply Voltage Disturbances
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–30 –15
0
15
30
45
60
75
90
Sensitivity in dark ambient
E
e min
– Threshold Irradiance (mW/m
2
)
^
^
E
e min
– Threshold Irradiance (mW/m
2
)
96 12111
E – DC Irradiance (W/m
2
)
96 12112
T
amb
– Ambient Temperature (
°C
)
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
3 (7)
TSOP12..KS1
E
e
Optical Test Signal
( IR diode TSIP 5201, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms )
T
on
,T – Output Pulse Length (ms)
off
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
t
t
po2 )
12843
T
on
t
t
pi
*
* t
pi
Output Signal
1)
2)
w
T
10/fo is recommended for optimal function
96 12109
T
off
V
O
V
OH
V
OL
l
= 950 nm,
optical test signal, fig.8
7/f
0
< t
d
< 15/f
0
t
po
= t
pi
6/f
0
"
1.0
10.0
100.0 1000.0 10000.0
t
d1 )
E
e
– Irradiance (mW/m
2
)
Figure 7. Output Function
E
e
Optical Test Signal
1.0
0.9
I
s
– Supply Current ( mA )
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Figure 10. Output Pulse Diagram
V
s
= 5 V
600
m
s
T = 60 ms
600
m
s
t
94 8134
V
O
V
OH
V
OL
Output Signal,
( see Fig.10 )
0
–30 –15
T
on
T
off
t
96 12115
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°C
)
Figure 8. Output Function
3.0
E
e min
– Threshold Irradiance (mW/m
2
)
2.5
2.0
1.5
N=22
1.0
0.5
0
0
12842
Figure 11. Supply Current vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
750
94 8408
N=16 pulses
per burst
N=32
S (
l
)
rel
– Relative Spectral Sensitivity
0.1
0.2
0.3
0.4
0.5
0.6
0.7
850
950
1050
1150
t
p
/T – Duty Cycle
l
– Wavelength ( nm )
Figure 9. Sensitivity vs. Duty Cycle
Figure 12. Relative Spectral Sensitivity vs. Wavelength
4 (7)
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
TSOP12..KS1
0°
10°
20°
30°
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
95 11339p2
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
95 11340p2
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 13. Vertical Directivity
ϕ
y
Figure 14. Horizontal Directivity
ϕ
x
TELEFUNKEN Semiconductors
Rev. A1, 22-Jul-97
5 (7)
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