VISHAY
TSOP48..SS1F
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP48..SS1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP48..SS1F is the
standard IR remote control receiver series, support-
ing all major transmission codes.
1
2
3
16672
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
e3
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
• Improved immunity against ambient light
• Suitable burst length
≥
10 cycles/burst
• Enhanced suppression of disturbance signals by
special filtering
Parts Table
Part
TSOP4830SS1F
TSOP4833SS1F
TSOP4836SS1F
TSOP4837SS1F
TSOP4838SS1F
TSOP4840SS1F
TSOP4856SS1F
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Block Diagram
Application Circuit
16833
3
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
16842
1
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
2
Control Circuit
GND
OUT
GND
µC
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Document Number 82268
Rev. 1.1, 01-Mar-05
www.vishay.com
1
TSOP48..SS1F
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
10 s, 1 mm from case
(Pin 2)
(Pin 2)
(Pin 1)
(Pin 1)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
5
- 0.3 to + 6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
VISHAY
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 3)
Transmission Distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 250 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
Symbol
I
SD
I
SH
d
Min
0.8
Typ.
1.2
1.5
35
Max
1.5
Unit
mA
mA
m
Supply Voltage
Output Voltage Low (Pin 3)
Minimum Irradiance (56 kHz)
V
S
V
OSL
E
e min
4.5
5.5
250
0.3
0.5
V
mV
mW/m
2
Minimum Irradiance
(30 - 40 kHz)
Maximum Irradiance
Directivity
E
e min
0.2
0.4
mW/m
2
E
e max
ϕ
1/2
30
± 45
W/m
2
deg
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2
Document Number 82268
Rev. 1.1, 01-Mar-05
VISHAY
TSOP48..SS1F
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
t
pi
*
T
* t
pi
w
10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
d1 )
Output Signal
1)
2)
16110
7/f
0
<
t
d
<
15/f
0
t
pi
–5/f
0
<
t
po
<
t
pi
+6/f
0
t
po2 )
t
10.0
100.0 1000.010000.0
16909
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
t
po
– Output Pulse Width ( ms )
1.2
E
e min
/ E
e
– Rel. Responsivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
( 3dB ) = f
0
/10
0.9
1.1
1.3
Input Burst Duration
l
= 950 nm,
optical test signal, fig.1
10.0
100.0 1000.010000.0
16925
16908
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 82268
Rev. 1.1, 01-Mar-05
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3
TSOP48..SS1F
Vishay Semiconductors
VISHAY
E
e min
– Threshold Irradiance ( mW/m
2
)
S (
λ
)
rel
-
Relative Spectral Sensitivity
2.0
f = f
o
f = 10 kHz
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
750
850
950
1050
1150
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16912
18998
λ
-
Wavelength ( nm )
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Relative Spectral Sensitivity vs. Wavelength
E
e min
– Threshold Irradiance ( mW/m
2
)
0
2.0
f(E) = f
0
1.6
10
20
30
40
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
96 12223p2
1.0
0.9
0.8
0.7
50
60
70
80
0.6
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Directivity
0.7
Max. Envelope Duty Cycle
E
e min
– Threshold Irradiance ( mW/m
2
)
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15
Sensitivity in dark ambient
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
f = 38 kHz, E
e
= 2
mW/m
2
0
15
30
45
60
75
90
16913
Burst Length ( number of cycles / burst )
16918
T
amb
– Ambient Temperature ( C )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Sensitivity vs. Ambient Temperature
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Document Number 82268
Rev. 1.1, 01-Mar-05
VISHAY
Suitable Data Format
The circuit of the TSOP48..SS1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP48..SS1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP48..SS1F are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 13 or Figure 14).
TSOP48..SS1F
Vishay Semiconductors
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
16920
5
10
Time ( ms )
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
0
16921
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
Document Number 82268
Rev. 1.1, 01-Mar-05
www.vishay.com
5
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