VISHAY
TSOP62..
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP62.. - series are miniaturized SMD-IR
Receiver Modules for infrared remote control sys-
tems. PIN diode and preamplifier are assembled on
lead frame, the epoxy package is designed as IR fil-
ter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP62.. is the stan-
dard IR remote control SMD-Receiver series, sup-
porting all major transmission codes.
16797
Features
•
•
•
•
•
•
•
•
•
Photo detector and preamplifier in one package
Internal filter for PCM frequency
Continuous data transmission possible
TTL and CMOS compatibility
Output active low
Low power consumption
High immunity against ambient light
Suitable burst length
≥
10 cycles/burst
Taping available for topview and sideview assem-
bly
• Low power consumption
Block Diagram
3
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
4
OUT
1;2
Control Circuit
GND
Special Features
• Improved immunity against ambient light
• Suitable burst length
≥
10 cycles/burst
• Taping available for Topview and Sideview
assembly
Parts Table
Part
TSOP6230
TSOP6233
TSOP6236
TSOP6237
TSOP6238
TSOP6240
TSOP6256
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Carrier Frequency
Document Number 82177
Rev. 3, 15-Oct-02
www.vishay.com
1
TSOP62..
Vishay Semiconductors
Application Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
Circuit
VISHAY
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
OUT
GND
µC
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
T
amb
≤
85 °C
Pin 3
Pin 3
Pin 4
Pin 4
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
Value
- 0.3 to 6.0
5
- 0.3 to 6.0
15
100
- 40 to +
100
- 25 to + 85
50
Unit
V
mA
V
mA
°C
°C
°C
mW
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current
Supply Voltage
Transmission Distance
Output Voltage Low (Pin 4)
Irradiance (30-40 kHz)
Irradiance (56 kHz)
Irradiance
Directivity
E
v
= 0, test signal see fig.1, IR
diode TSAL6200, I
F
= 400 mA
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
Pulse width tolerance: t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
, test signal see fig.1
Pulse width tolerance: t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
, test signal see fig.1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
, test signal
see fig. 1
Angle of half transmission distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
V
OSL
E
e min
E
e min
E
e max
ϕ
1/2
30
±
50
0.35
0.4
4.5
35
250
0.5
0.6
Min
0.8
Typ.
1.1
1.4
5.5
Max
1.5
Unit
mA
mA
V
m
mV
mW/m
2
mW/m
2
W/m
2
deg
Document Number 82177
Rev. 3, 15-Oct-02
www.vishay.com
2
VISHAY
Typical Characteristics
(T
amb
= 25°C unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
TSOP62..
Vishay Semiconductors
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
t
pi
*
T
* t
pi
w
10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
d1 )
Output Signal
1)
2)
16110
7/f
0
<
t
d
<
15/f
0
t
pi
–5/f
0
<
t
po
<
t
pi
+6/f
0
t
po2 )
t
16909
10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
1.0
t
po
– Output Pulse Width ( ms )
1.2
E
e min
/ E
e
– Rel. Responsivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
Output Pulse
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
( 3dB ) = f
0
/10
0.9
1.1
1.3
Input Burst Duration
l
= 950 nm,
optical test signal, fig.1
10.0
100.0 1000.010000.0
16925
16908
E
e
– Irradiance ( mW/m
2
)
f/f
0
– Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
Figure 5. Frequency Dependence of Responsivity
E
e
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
100.00
E – Ambient DC Irradiance (W/m
2
)
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 82177
Rev. 3, 15-Oct-02
www.vishay.com
3
TSOP62..
Vishay Semiconductors
VISHAY
E
e min
– Threshold Irradiance ( mW/m
2
)
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f = f
o
f = 10 kHz
1.0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
–30 –15
Sensitivity in dark ambient
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
0
15
30
45
60
75
90
16912
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16918
T
amb
– Ambient Temperature ( C )
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E
e min
– Threshold Irradiance ( mW/m
2
)
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
S (
l
)
rel
– Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
850
950
1050
1150
94 8147
16919
l
– Wavelength ( nm )
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0.8
0.7
Max. Envelope Duty Cycle
0
10
20
30
0.6
40
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
16801
1.0
0.9
0.8
f = 38 kHz, E
e
= 2 mW/m
2
0.7
50
60
70
80
0.6
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
16913
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
Document Number 82177
Rev. 3, 15-Oct-02
www.vishay.com
4
VISHAY
Suitable Data Format
The circuit of the TSOP62.. is designed in that way
that unexpected output pulses due to noise or distur-
bance signals are avoided. A bandpassfilter, an inte-
grator stage and an automatic gain control are used
to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 4 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the TSOP62..
it can still receive the data signal. However the sensi-
tivity is reduced to that level that no unexpected
pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP62.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
TSOP62..
Vishay Semiconductors
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation (see Figure 13 or Fig-
ure 14).
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
16920
5
10
Time ( ms )
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
0
16921
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with high Modulation
Document Number 82177
Rev. 3, 15-Oct-02
www.vishay.com
5
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