SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF10502/D
The RF Line
Microwave Pulse
Power Transistor
Designed for 1025– 1150 MHz pulse common base amplifier applications
such as TCAS, T ACAN and Mode–S transmitters.
•
Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 8.5 dB Min, 9.0 dB (Typ)
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Hermetically Sealed Industry Package
•
Silicon Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input and Output Matching
•
Characterized with 10
µs,
1% Duty Cycle Pulses
MRF10502
500 W (PEAK)
1025 – 1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355J–02, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak
(1)
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
TJ
Value
65
65
3.5
29
1460
8.3
– 65 to +200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
0.12
Unit
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
θ
JC value
measured @ 32
µs,
2%.)
Replaces MRF10500/D
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
65
65
3.5
—
—
—
—
—
—
—
—
25
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
20
—
—
—
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
Collector Efficiency
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
Load Mismatch
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
GPB
η
ψ
8.5
40
9.0
45
—
—
dB
%
No Degradation in Output Power
Z5
D.U.T.
L1
C2
C3
C4
+
+
–
C1
RF INPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
RF OUTPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
µF
C4 — 100
µF,
100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε
r = 2.55, 2 Oz. Copper
.700
.150
.625
.160
.081
1.725
.105
.650
1.123
.216
1.309
1.108
.081
.644
.365
.500
0.140
2.000
.355
.081
.100
Figure 1. Test Circuit
Replaces MRF10500/D
2
POUT, OUTPUT POWER (WATTS)
600
450
300
f = 1090 MHz
VCC = 50 Volts
150
0
15
30
45
60
75
100
115
PIN, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
1120
1150
ZOUT (ZOL*)
1090
1060
f = 1030 MHz
f = 1030 MHz
Zo = 10
Ω
1060
1090
Zin
1150
1120
POUT = 500 W Pk VCC = 50 V
f
MHz
1030
1060
1090
1120
1150
Zin
OHMS
55.3
+ j2.25
56.2
+ j0.25
55.2
– j1.45
53.7
– j1.35
3.15 – j1.35
ZOL* (ZOUT)
OHMS
62.6
+ j1.89
2.56 + j2.09
2.12 + j2.29
21.9
+ j2.15
91.6
+ j1.62
ZOL* is the conjugate of the optimum load
impedance into which the device operates at a
given output power voltage and frequency.
Figure 3. Series Equivalent Input/Output Impedances
Replaces MRF10500/D
3
PACKAGE DIMENSIONS
–A–
M
U
RADIUS
Q
2 PL
M
0.51 (0.020)
1
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
H
J
K
M
N
Q
R
U
INCHES
MILLIMETERS
MIN MAX MIN
MAX
0.990
1.010
25.15
25.65
0.375
0.395
9.53
10.03
0.145
0.175
3.68
4.45
0.195
0.205
4.95
5.21
0.055
0.065
1.40
1.65
0.117
0.133
2.97
3.38
0.003
0.006
0.08
0.15
0.580
0.620
14.73
15.75
45
_
REF
45
_
REF
0.590
0.610
14.99
15.49
0.055
0.065
1.40
1.65
0.395
0.405
10.03
10.29
0.800 BSC
20.32 BSC
K R
3
2
–B–
D
J
H
–T–
SEA
TING
PLANE
N
E
C
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
CASE 355J–02
ISSUE A
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Replaces MRF10500/D
4
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