LAB
TO3 Package Outline.
Dimensions in mm (Inches)
SEME
SML1001R1AN
SML901R1AN
SML1001R3AN
SML901R3AN
1000V
900V
1000V
900V
9.5A
9.5A
8.5A
8.5A
1.10
W
1.10
W
1.30
W
1.30
W
POWER MOS IV™
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
Parameter
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STJ
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
901R1AN
900
9.5
38
±30
230
SML
1001R1AN 901R3AN
1000
900
8.5
34
1001R3AN
1000
Unit
V
A
A
V
W
–55 to 150
°C
STATIC ELECTRICAL RATINGS
(T
case
=25°C unless otherwise stated)
Characteristic / Test Conditions / Part Number
Drain – Source Breakdown Voltage
SML1001R1AN / SML1001R3AN
(V
GS
= 0V , I
D
= 250
m
A)
Zero Gate Voltage Drain Current
Gate – Source Leakage Current
On State Drain Current
2
(V
DS
> I
D(ON)
x R
DS(ON)
Max , V
GS
= 10V)
Static Drain – Source On State Resistance
2
(V
GS
=10V , I
D
= 0.5 I
D
[Cont.])
SML901R1AN / SML901R3AN
(V
GS
= 0V , V
DS
= V
DSS
)
(V
GS
= 0V , V
DS
= 0.8V
DSS
, T
C
= 125°C)
(V
GS
= ±30V , V
DS
= 0V)
SML1001R1AN / SML901R1AN
SML1001R1AN / SML901R3AN
9.5
8.5
2
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
4
1.1
1.3
Min.
1000
900
250
1000
±100
Typ.
Max. Unit
V
BV
DSS
I
DSS
I
GSS
I
D(ON)
m
A
nA
A
V
V
GS(TH)
Gate Threshold Voltage
R
DS(ON)
W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 12/00
SML1001R1AN
SML901R1AN
SML1001R3AN
SML901R3AN
1000V
900V
1000V
900V
9.5A
9.5A
8.5A
8.5A
1.10
W
1.10
W
1.30
W
1.30
W
Test Conditions.
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= I
D
[Cont.]
V
DD
= 0.5 V
DSS
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.]
V
GS
= 15V
R
G
= 1.8
W
LAB
Min.
Typ.
2460
360
105
90
9.3
47
15
16
64
24
Max. Unit
2950
500
160
130
14
70
30
32
95
48
ns
nC
pF
SEME
DYNAMIC CHARACTERISTICS
Characteristic
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions.
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V , I
S
= – I
D
[Cont.])
Reverse Recovery Time
(I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
Reverse Recovery Charge
320
2.2
636
4.5
Part Number
SML1001R1AN / SML901R1AN
SML901R3AN / SML901R3AN
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
Min.
Typ.
Max. Unit
9.5
A
8.5
38
34
1.3
A
V
1200
9
ns
m
C
SAFE OPERATING AREA CHARACTERISTICS
SOA1
SOA2
I
LM
Characteristic / Test Conditions / Part Number
Safe Operating Area
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec
Safe Operating Area
Inductive Current Clamped
I
DS
= I
DS
[Cont.] , V
DS
= P
D
/ I
D
[Cont.] , t = 1 Sec
SML1001R1AN / SML901R1AN
SML1001R3AN / SML901R3AN
Min.
230
230
38
34
Typ.
Max. Unit
W
A
THERMAL CHARACTERISTICS
(T
case
=25°C unless otherwise stated)
R
q
JC
R
q
JA
T
L
Characteristic / Test Conditions.
Junction to Case
Junction to Ambient
Max. Lead Temperature for Soldering Conditions: 0.065” from Case for 10 sec.
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
Max. Unit
0.53 °C/W
30
300
°C/W
°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 12/00
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