Datasheet> 器件分类 > 分立半导体> 晶体管> SML60W32R1

SML60W32R1: 产品描述Power Field-Effect Transistor, 31.5A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN; 产品类别分立半导体晶体管; 文件大小26KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/; 标准

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SML60W32R1概述

Power Field-Effect Transistor, 31.5A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN

SML60W32R1规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	TT Electronics plc
包装说明	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
雪崩能效等级（Eas）	2500 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	600 V
最大漏极电流 (ID)	31.5 A
最大漏源导通电阻	0.17 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-267AA
JESD-30 代码	R-MSFM-P3
JESD-609代码	e1
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	126 A
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN SILVER COPPER
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

SML60W32R1文档预览

SML60W32

TO–267 Package Outline.

Dimensions in mm (inches)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

DSS

600V

31.5A

D(cont)

Ω

DS(on)

0.170Ω

• Faster Switching

• Lower Leakage

• TO–267 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSM

, T

STG

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Total Power Dissipation @ T

case

= 25°C

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

600

31.5

126

±30

±40

400

3.2

–55 to 150

300

31.5

2500

W/°C

°C

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T

= 25°C, L = 5.04mH, R

= 25Ω, Peak I

= 31.5A

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

6/99

SML60W32

STATIC ELECTRICAL RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

GS(TH)

D(ON)

DS(ON)

Characteristic

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

= 0V)

Gate – Source Leakage Current

Gate Threshold Voltage

On State Drain Current

Drain – Source On State Resistance

Test Conditions

= 0V , I

= 250µA

= V

DSS

= 0.8V

DSS

, T

= 125°C

= ±30V , V

= 0V

= V

, I

= 2.5mA

> I

D(ON)

x R

DS(ON)

Max

= 10V

= 10V , I

= 0.5 I

[Cont.]

31.5

0.170

Min.

600

Typ.

Max. Unit

250

±100

µA

Ω

DYNAMIC CHARACTERISTICS

iss

oss

rss

d(on)

d(off)

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

= 0V

= 25V

f = 1MHz

= 10V

= 0.5 V

DSS

= I

[Cont.] @ 25°C

= 15V

= 0.5 V

DSS

= I

[Cont.] @ 25°C

= 0.6Ω

Min.

Typ.

7500

900

320

315

125

Max. Unit

9000

1260

480

475

190

SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic

Continuous Source Current

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Test Conditions

(Body Diode)

= 0V , I

= – I

[Cont.]

= – I

[Cont.] , dl

/ dt = 100A/µs

= – I

[Cont.] , dl

/ dt = 100A/µs

690

15.9

Min.

Typ.

Max. Unit

31.5

126

1.3

µC

THERMAL CHARACTERISTICS

θJC

θJA

Characteristic

Junction to Case

Junction to Ambient

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%

3) See MIL–STD–750 Method 3471

CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.

Min.

Typ.

Max. Unit

0.31

°C/W

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

6/99

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SML60W32R1相似产品对比

	SML60W32R1	SML60W32
描述	Power Field-Effect Transistor, 31.5A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN	Power Field-Effect Transistor, 31.5A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, TO-267, 3 PIN
是否Rohs认证	符合	不符合
厂商名称	TT Electronics plc	TT Electronics plc
包装说明	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant	compliant
雪崩能效等级（Eas）	2500 mJ	2500 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	600 V	600 V
最大漏极电流 (ID)	31.5 A	31.5 A
最大漏源导通电阻	0.17 Ω	0.17 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-267AA	TO-267AA
JESD-30 代码	R-MSFM-P3	R-MSFM-P3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
封装主体材料	METAL	METAL
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	126 A	126 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

SML60W32R1

SML60W32R1概述

SML60W32R1规格参数

SML60W32R1文档预览

SML60W32R1相似产品对比

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