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SML50A21R1

产品描述Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-3
产品类别分立半导体    晶体管   
文件大小40KB,共2页
制造商TT Electronics plc
官网地址http://www.ttelectronics.com/
标准
下载文档 详细参数 选型对比 全文预览

SML50A21R1概述

Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-3

SML50A21R1规格参数

参数名称属性值
是否Rohs认证符合
厂商名称TT Electronics plc
包装说明HERMETIC SEALED PACKAGE-3
Reach Compliance Codecompliant
雪崩能效等级(Eas)1300 mJ
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压500 V
最大漏极电流 (ID)21 A
最大漏源导通电阻0.22 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-3
JESD-30 代码O-MBFM-P2
JESD-609代码e1
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料METAL
封装形状ROUND
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)84 A
认证状态Not Qualified
表面贴装NO
端子面层TIN SILVER COPPER
端子形式PIN/PEG
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON

SML50A21R1文档预览

SML50A21
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
V
DSS
500V
I
D(cont)
21A
Ω
R
DS(on)
0.220Ω
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
38.61 (1.52)
39.12 (1.54)
1.47 (0.058)
1.60 (0.063)
29.9 (1.177)
30.4 (1.197)
Pin 1 – Gate
16.64 (0.655)
17.15 (0.675)
Pin 2 – Source
Case – Drain
D
G
S
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 5.90mH, R
G
= 25Ω, Peak I
L
= 21A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
22.23
(0.875)
max.
500
21
84
±30
±40
235
1.88
–55 to 150
300
21
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5963
Issue 1
SML50A21
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250μA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
21
0.220
Min.
500
Typ.
Max. Unit
V
25
250
±100
4
μA
nA
V
A
Ω
DYNAMIC CHARACTERISTICS
Characteristic
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 1.6Ω
Min.
Typ.
3700
510
200
150
25
70
12
10
50
8
Max. Unit
4440
715
300
225
37
105
25
20
75
15
ns
nC
pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/μs
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/μs
510
10
Min.
Typ.
Max. Unit
21
A
84
1.3
V
ns
μC
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380μS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Min.
Typ.
Max. Unit
0.53
°C/W
30
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5963
Issue 1

SML50A21R1相似产品对比

SML50A21R1 SML50A21
描述 Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-3 Power Field-Effect Transistor, 21A I(D), 500V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-3
是否Rohs认证 符合 不符合
厂商名称 TT Electronics plc TT Electronics plc
包装说明 HERMETIC SEALED PACKAGE-3 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant compliant
雪崩能效等级(Eas) 1300 mJ 1300 mJ
外壳连接 DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 500 V 500 V
最大漏极电流 (ID) 21 A 21 A
最大漏源导通电阻 0.22 Ω 0.22 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-3 TO-3
JESD-30 代码 O-MBFM-P2 O-MBFM-P2
元件数量 1 1
端子数量 2 2
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 METAL METAL
封装形状 ROUND ROUND
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 84 A 84 A
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 PIN/PEG PIN/PEG
端子位置 BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

 
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