This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon Junction FETs (Small Signal)
2SK3862G
Silicon N-channel junction FET
For impedance conversion in low frequency
For electret capacitor microphone
Features
Low noise voltage NV
High voltage gain GV
Thin package: TSSSMini3-F2 (1.2 mm
×
1.2 mm
×
0.33 mm)
Package
Code
TSSSMini3-F2
Name
Pin
1: Drain
2: Source
3: Gate
Drain-source voltage (Gate open)
Drain-source current (Gate open)
Power dissipation
V
DSO
I
DSO
P
D
Drain-gate voltage (Souece open)
Drain-gate current (Souece open)
Operating ambient temperature
Storage temperature
V
DGO
I
DGO
T
opr
T
stg
–20 to +80
–55 to +125
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Drain current
*1
I
D
Symbol
I
DSS
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20
20
2
2
V
V
M
ain
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Absolute Maximum Ratings
T
a
= 25°C
Parameter
Symbol
Rating
Unit
mA
mA
°C
°C
100
mW
Conditions
V
DS
= 2.0 V, R
d
= 2.2 kW
±
1%
V
D
= 2.0 V, V
GS
= 0, f = 1 kHz
V
D
= 2.0 V, R
d
= 2.2 kW
±
1%
C
O
= 5 pF, A-curve
Drain-source current
*2
Marking Symbol: 5D
Min
100
107
660
Typ
Max
470
460
Unit
mA
mA
mS
mV
isc
on
Noise voltage
*3
NV
tin
ue
Forward transfer conductance
di
V
DS
= 2.0 V, R
d
= 2.2 kW
±
1%, V
GS
= 0
Y
fs
1 500
4
ce
G
V1
G
V2
G
V3
V
D
= 2.0 V, R
d
= 2.2 kW
±
1%
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
/D
–5.0
–1.0
3.0
Ma
int
en
Voltage gain
V
D
= 12 V, R
d
= 2.2 kW
±
1%
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
V
D
= 1.5 V, R
d
= 2.2 kW
±
1%
C
O
= 5 pF, e
G
= 10 mV, f = 1 kHz
V
D
= 2.0 V, R
d
= 2.2 kW
±
1%
C
O
= 5 pF, e
G
= 10 mV
f = 1 kHz to 70 Hz
an
–3.0
–7.0
–1.5
dB
Voltage gain difference
DG
V
. f
*4
Pl
0
0.5
8
10
1.7
2.0
dB
GW
G
V1
– G
V3
Gate resistance
R
g
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. A protection diode is built-in between gate and source of transistor. However if forward current
flows
between gate and source transistor
might be damaged. So please be careful not insert reverse.
3. *1: I
D
is assured for I
DSS
.
*2: Rank classification
Rank
I
DSS
(mA)
R
107 to 150
S
130 to 220
T
180 to 315
U
285 to 460
*3: NV is assured for design.
*4:
D|G
V
. f
|
is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)
Publication date: August 2008
SJF00094BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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ain
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