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HM62V16258BLTT-8SL

产品描述STANDARD SRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
产品类别存储    存储   
文件大小106KB,共18页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

HM62V16258BLTT-8SL概述

STANDARD SRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

HM62V16258BLTT-8SL规格参数

参数名称属性值
厂商名称Renesas(瑞萨电子)
零件包装代码TSOP2
包装说明TSOP2,
针数44
Reach Compliance Codeunknown
最长访问时间85 ns
JESD-30 代码R-PDSO-G44
长度18.41 mm
内存密度4194304 bit
内存集成电路类型STANDARD SRAM
内存宽度16
功能数量1
端子数量44
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX16
封装主体材料PLASTIC/EPOXY
封装代码TSOP2
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL
宽度10.16 mm

HM62V16258BLTT-8SL文档预览

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HM62V16258B Series
4 M SRAM (256-kword
×
16-bit)
ADE-203-975B (Z)
Rev. 2.0
Oct. 14, 1999
Description
The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word
×
16-bit. HM62V16258B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 70 ns/85 ns (max)
Power dissipation:
Active: 9 mW (typ)
Standby: 3
µW
(typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
HM62V16258B Series
Ordering Information
Type No.
HM62V16258BLTT-7
HM62V16258BLTT-8
HM62V16258BLTT-7SL
HM62V16258BLTT-8SL
Access time
70 ns
85 ns
70 ns
85 ns
Package
400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
2
HM62V16258B Series
Pin Arrangement
44-pin TSOP
A4
A3
A2
A1
A0
CS
I/O0
I/O1
I/O2
I/O3
V
CC
V
SS
I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
(Top view)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
V
SS
V
CC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A12
Pin Description
Pin name
A0 to A17
I/O0 to I/O15
CS
WE
OE
LB
UB
V
CC
V
SS
NC
Function
Address input
Data input/output
Chip select
Write enable
Output enable
Lower byte select
Upper byte select
Power supply
Ground
No connection
3

HM62V16258BLTT-8SL相似产品对比

HM62V16258BLTT-8SL HM62V16258BLTT-7 HM62V16258BLTT-7SL HM62V16258BLTT-8
描述 STANDARD SRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 STANDARD SRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 256KX16 STANDARD SRAM, 70ns, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44 STANDARD SRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 TSOP2 TSOP2 TSOP2 TSOP2
包装说明 TSOP2, TSOP2, TSOP2, TSOP2,
针数 44 44 44 44
Reach Compliance Code unknown unknown unknown compliant
最长访问时间 85 ns 70 ns 70 ns 85 ns
JESD-30 代码 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44
长度 18.41 mm 18.41 mm 18.41 mm 18.41 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 16 16 16 16
功能数量 1 1 1 1
端子数量 44 44 44 44
字数 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C
组织 256KX16 256KX16 256KX16 256KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 TSOP2 TSOP2
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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