HGT1S7N60A4S9A, HGTG7N60A4
HGTP7N60A4
Data Sheet
September 2004
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time
. . . . . . . . . . . . . . . . . . . 75
ns at T
J
= 125
o
C
• Low Conduction Loss
Ordering Information
PART NUMBER
HGT1S7N60A4S9A
HGTG7N60A4
HGTP7N60A4
PACKAGE
TO-263AB
TO-247
TO-220AB
BRAND
G7N60A4
G7N60A4
G7N60A4
Symbol
C
NOTE: When ordering, use the entire part number.
G
E
Packaging
JEDEC STYLE TO-247
E
C
G
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(BOTTOM SIDE METAL)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2
Single Pulse Avalanche Energy at T
C
= 25
o
C . . . . . . . .
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . .
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
.................................
34
14
56
±20
±30
35A at 600V
25mJ at 7A
125
1.0
-55 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
600
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= -10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
20
-
-
-
-
4.5
-
35
25
-
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.9
1.6
5.9
-
-
-
9.0
37
48
11
11
100
45
55
120
60
MAX
-
-
250
2
2.7
2.2
7.0
±250
-
-
-
45
60
-
-
-
-
-
150
75
UNITS
V
V
µA
mA
V
V
V
nA
A
mJ
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 7A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
E
AS
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
CE
= 7A, L = 500µH
I
C
= 7A, V
CE
= 300V
I
C
= 7A,
V
CE
= 300V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 7A
V
CE
= 390V
V
GE
= 15V
R
G
= 25Ω
L = 1mH
Test Circuit (Figure 20)
©2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 7A
V
CE
= 390V
V
GE
= 15V
R
G
= 25Ω
L = 1mH
Test Circuit (Figure 20)
MIN
-
-
-
-
-
-
-
-
TYP
10
7
130
75
50
200
125
-
MAX
-
-
150
85
-
215
170
1.0
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
35
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V, L = 100µH
V
GE
= 15V
30
25
20
15
10
5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
30
20
10
0
0
100
200
300
400
500
600
700
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
f
MAX
, OPERATING FREQUENCY (kHz)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
V
CE
= 390V, R
G
= 25Ω, T
J
= 125
o
C
14
12
10
8
6
4
t
SC
I
SC
120
100
80
60
40
20
200
100 f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 1.0
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 25Ω, L = 2mH, V
CE
= 390V
30
1
5
10
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
V
GE
o
C 15V
75
T
C
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
16
140
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
25
T
J
= 125
o
C
20
15
10
T
J
= 25
o
C
5
0
T
J
= 150
o
C
0
0.5
2.5
1.5
2.0
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
25
20
15
10
5
T
J
= 150
o
C
0
0
0.5
1.0
1.5
2.0
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
T
J
= 25
o
C
T
J
= 125
o
C
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
500
E
ON2
, TURN-ON ENERGY LOSS (µJ)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 25Ω, L = 1mH, V
CE
= 390V
350
R
G
= 25Ω, L = 1mH, V
CE
= 390V
300
250
200
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
100
50
0
400
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
300
200
100
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
0
4
6
8
10
12
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
14
T
J
= 25
o
C, V
GE
= 12V OR 15V
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
16
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 25Ω, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V
t
rI
, RISE TIME (ns)
40
R
G
= 25Ω, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
14
T
J
= 125
o
C, V
GE
= 12V
30
12
T
J
= 25
o
C, V
GE
= 15V
20
10
10
T
J
= 125
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
0
0
4
6
8
10
12
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
14
8
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves
180
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
160
140
120
V
GE
= 12V, T
J
= 125
o
C
100
80
V
GE
= 12V, T
J
= 25
o
C
60
0
2
4
6
8
10
12
14
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 15V, T
J
= 125
o
C
t
fI
, FALL TIME (ns)
R
G
= 25Ω, L = 1mH, V
CE
= 390V
Unless Otherwise Specified
(Continued)
90
R
G
= 25Ω, L = 1mH, V
CE
= 390V
80
70
60
50
40
30
20
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
0
2
4
6
8
10
12
14
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
100
80
60
40
20
0
T
J
= 125
o
C
T
J
= -55
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
T
J
= 25
o
C
15
I
G(REF)
= 1mA, R
L
= 43Ω, T
J
= 25
o
C
V
CE
= 600V
V
CE
= 400V
12
9
V
CE
= 200V
6
3
7
8
9
10
11
12
13
14
15
0
0
5
10
15
20
25
30
35
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (µJ)
800
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
R
G
= 25Ω, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
10
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
600
I
CE
= 14A
400
I
CE
= 7A
200
I
CE
= 3.5A
1
I
CE
= 14A
I
CE
= 7A
I
CE
= 3.5A
0.1
10
0
25
50
75
100
125
150
100
R
G
, GATE RESISTANCE (Ω)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
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