MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MOC8204/D
MOC8204*
GlobalOptoisolator™
[CTR = 20% Min]
6-Pin DIP Optoisolators
High Voltage Transistor Output
(400 Volts)
The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide
infrared emitting diodes optically coupled to high voltage, silicon, phototransis-
tor detectors in a standard 6–pin DIP package. They are designed for high
voltage applications and are particularly useful in copy machines and solid state
relays.
•
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
•
Copy Machines
•
Interfacing and coupling systems of different potentials and impedances
•
Monitor and Detection Circuits
•
Solid State Relays
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
INPUT LED
Forward Current — Continuous
Forward Current — Peak
Pulse Width = 1
µs,
330 pps
LED Power Dissipation @ TA = 25°C
Derate above 25°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current (Continuous)
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Operating Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 s)
Isolation Surge Voltage
Peak ac Voltage, 60 Hz, 1 Second Duration(1)
PD
TJ
Tstg
TL
VISO
250
2.94
– 55 to +100
– 55 to +150
260
7500
mW
mW/°C
°C
°C
°C
Vac(pk)
VCER
VECO
VCBO
IC
PD
400
7
400
100
150
1.76
Volts
Volts
mA
mA
mW
mW/°C
IF
IF
PD
60
1.2
120
1.41
mA
Amp
mW
mW/°C
Symbol
Value
Unit
MOC8205
[CTR = 10% Min]
MOC8206
[CTR = 5% Min]
*Motorola Preferred Device
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
1
2
3
6
5
4
PIN 1.
2.
3.
4.
5.
6.
ANODE
CATHODE
N.C.
EMITTER
COLLECTOR
BASE
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred
devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
REV 1
©
Motorola
Inc. 1995
Motorola,
Optoelectronics Device Data
1
MOC8204 MOC8205 MOC8206
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)(1)
Characteristic
INPUT LED
(TA = 25°C unless otherwise noted)
Reverse Leakage Current
(VR = 6 V)
Forward Voltage
(IF = 10 mA)
Capacitance
(V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
(TA = 25°C and IF = 0 unless otherwise noted)
Collector–Emitter Dark Current (RBE = 1 MΩ)
(VCE = 300 V)
Collector–Base Breakdown Voltage
(IC = 100
µA)
Collector–Emitter Breakdown Voltage
(IC = 1 mA, RBE = 1 MΩ)
Emitter–Base Breakdown Voltage
(IE = 100
µA)
COUPLED
(TA = 25°C unless otherwise noted)
Output Collector Current
(VCE = 10 V, IF = 10 mA, RBE = 1 MΩ)
IC (CTR)(2)
MOC8204
MOC8205
MOC8206
VCE(sat)
VISO
RISO
CISO
ton
toff
2 (20)
1 (10)
0.5 (5)
—
7500
—
—
—
—
—
—
—
—
—
1011
0.2
5
5
—
—
—
0.4
—
—
—
—
—
Volts
Vac(pk)
Ohms
pF
µs
mA (%)
ICER
TA = 25°C
TA = 100°C
V(BR)CBO
V(BR)CER
V(BR)EBO
—
—
400
400
7
—
—
—
—
—
100
250
—
—
—
nA
µA
Volts
Volts
Volts
IR
VF
CJ
—
—
—
—
1.2
18
10
15
—
µA
Volts
pF
Symbol
Min
Typ
(1)
Max
Unit
Collector–Emitter Saturation Voltage
(IC = 0.5 mA, IF = 10 mA, RBE = 1 MΩ)
Surge Isolation Voltage (Input to Output)(3)
Peak ac Voltage, 60 Hz, 1 sec
Isolation Resistance(3 )
(V = 500 V)
Isolation Capacitance(1)
(V = 0 V, f = 1 MHz)
Turn–On Time
Turn–Off Time
VCC = 10 V, IC = 2 mA, RL = 100
Ω
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test LED Pins 1 and 2 are common and phototransistor Pins 4, 5 and 6 are common.
TYPICAL CHARACTERISTICS
50
ICER, OUTPUT CURRENT (mA)
ICER, OUTPUT CURRENT (mA)
20
10
5
2
1
0.5
0.2
0.1
1
2
5
10
20
IF, LED INPUT CURRENT (mA)
50
RBE = 106
Ω
VCE = 10 V
TA = 25°C
RBE = 106
Ω
VCE = 10 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
20
10
5
2
1
–60
–40
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
Figure 1. Output Current versus LED Input Current
Figure 2. Output Current versus Temperature
2
Motorola Optoelectronics Device Data
MOC8204 MOC8205 MOC8206
40
ICER , OUTPUT CURRENT (mA)
10
5.0
1.0
5
1
0.05
RBE = 106
Ω
TA = 25°C
VF, FORWARD VOLTAGE (VOLTS)
IF = 50 mA
IF = 10 mA
IF = 5 mA
2
1.8
PULSE ONLY
PULSE OR DC
1.6
1.4
TA = –55°C
25°C
100°C
1
10
100
IF, LED FORWARD CURRENT (mA)
1000
1.2
1
0.01
0.005
0.1
0.5 1
5 10
50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
Figure 3. Output Characteristics
300
IF = 50 mA
240
180
RBE = 106
Ω
VCE = 10 V
Figure 4. Forward Characteristics
ICBO, COLLECTOR-BASE CURRENT (
µ
A)
1000
ICER , DARK CURRENT (nA)
100
VCE = 300 V
VCE = 100 V
10
VCE = 50 V
1
RBE = 106
Ω
120
60
0
–60
–40
IF = 10 mA
IF = 5 mA
–20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
20
30
40
50
60
70
80
90
100
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Collector–Base Current versus Temperature
Figure 6. Dark Current versus Temperature
Motorola Optoelectronics Device Data
3
MOC8204 MOC8205 MOC8206
PACKAGE DIMENSIONS
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.300 BSC
0
_
15
_
0.015
0.100
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
7.62 BSC
0
_
15
_
0.38
2.54
–B–
1
3
F
4 PL
N
C
L
–T–
SEATING
PLANE
K
G
J
6 PL
0.13 (0.005)
T A
M
M
E
6 PL
D
6 PL
0.13 (0.005)
M
M
T B
M
A
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
CASE 730A–04
ISSUE G
–A–
6
1
4
–B–
3
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.020
0.025
0.008
0.012
0.006
0.035
0.320 BSC
0.332
0.390
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.51
0.63
0.20
0.30
0.16
0.88
8.13 BSC
8.43
9.90
F
4 PL
H
C
L
–T–
G
E
6 PL
D
6 PL
0.13 (0.005)
M
J
K
6 PL
0.13 (0.005)
T A
M
M
SEATING
PLANE
T B
M
A
M
B
M
DIM
A
B
C
D
E
F
G
H
J
K
L
S
CASE 730C–04
ISSUE D
*Consult factory for leadform
option availability
4
Motorola Optoelectronics Device Data
MOC8204 MOC8205 MOC8206
–A–
6
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
DIM
A
B
C
D
E
F
G
J
K
L
N
INCHES
MIN
MAX
0.320
0.350
0.240
0.260
0.115
0.200
0.016
0.020
0.040
0.070
0.010
0.014
0.100 BSC
0.008
0.012
0.100
0.150
0.400
0.425
0.015
0.040
MILLIMETERS
MIN
MAX
8.13
8.89
6.10
6.60
2.93
5.08
0.41
0.50
1.02
1.77
0.25
0.36
2.54 BSC
0.21
0.30
2.54
3.81
10.16
10.80
0.38
1.02
–B–
1
3
F
4 PL
N
C
L
–T–
SEATING
PLANE
G
D
6 PL
K
0.13 (0.005)
M
J
T A
M
E
6 PL
B
M
*Consult factory for leadform
option availability
CASE 730D–05
ISSUE D
Motorola Optoelectronics Device Data
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
