tx
J.£ii£u ^Emi-L-onaactoi L/^ioaucti, One.
tJ
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BTW67 and BTW69 Series
STANDARD
50A SCRs
MAIN FEATURES:
Symbol
'T(RMS)
Value
50
Unit
A
V
mA
VDRM/VRRM
600 to 1200
80
IGT
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards
ABSOLUTE RATINGS
(limiting values)
Symbol
'TfRMS)
RMS on-state current
Paramete
r
Value
Unit
RD91
<
BTW67
>
RD91
TOP3 Ins.
Tc = 70°C
50
A
Tc = 75"C
Tc = 70°C
Tc = 75°C
'l(AV)
Average on-state current
RD91
TOP3 Ins.
32
610
A
'TSM
Non repetitive surge peak on-state current
tp
-
8.3 ms
tp = 10 ms
Tj ~ 25°C
A
A
2
S
580
Tj = 25°C
n
di/dt
1 1 Value for fusing
Critical rate of rise of on-state current IQ =
2 x l
G T
, tr< 100ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
1680
50
8
1
- 4 0 t o + 150
- 4 0 t o + 125
F = 60 Hz
tp = 20 us
Tj= 125°C
A/us
A
W
°C
V
!GM
P
G(AV)
T
stg
Tj = 125"C
T j = 125°C
Tj
V
RGM
5
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BTW67 and BTW69 Series
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
Fig. 2: Average and D.C. on-state current versus
case temperature.
IT(av)(A)
60
50
45
40
35
30
25
20
15
10
5
0
= 180
D.C
50
40
30
20
360"
ff
Bl
T/V67
X
s
X
s
-
BTW69
^v
s-
B"n
W67
^
Xs
^•»
*SS^V
b
•\
T(av)(A
10
15
20
25
30
3
10
Teas
5(°C)
25
50
75
^\
100
)
5
125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25°C]
K = [Zth/Rth]
1E+0
—14Hi—
^
<
1E-1
m
II-HI
f'
1E-2
. •
1E-3
tr
(st
II
Illl
1E-2
1E -3
1 E-1
1 E+0
1E+1
1E+2
5E
-20
0
20
40
60
80
100
120
140
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I
2
t.
ITSM(A), !
2
t(A
2
s)
BOO
550
500
4bO
400
350
300
dbU
200
150
100
50
0
TSM A)
-
'-
sooo
-Tjin tial
tp=10ms
5
^
—
- - Tj
^
• ii
~
-c
)nBey de;
1000
~ - imitation
peti \
initit
T -
r
5'i
^_
V,
I
2
t
_• =.
Re pe
lit
*
Tr.i
se=
7.
.,
~
-'.
'-••^-*.
"I k
; :
i
= :.
aer
10
Of
c
/C\€
100
10
tp(
ms>)
100
0.01
I
0.10
1.00
10.00
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
